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2N6520TA

Onsemi

2N6520TA by Onsemi

2N6520TA by Onsemi is a PNP BJT with max. power dissipation of 0.625W, max. collector-emitter voltage of 350V, and max. collector current of 0.5A. Ideal for applications requiring a single configuration transistor with high transition frequency (fT) of 40MHz in through-hole package style.

Median Price

$0.071

Lifecycle Status

Suppliers In-Stock

27

In-Stock Inventory

1k+

Distributors (Authorized)

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Mouser Electronics

USA . 20,658 parts In-Stock

1+ parts

$0.330

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$0.125

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$0.082

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$0.068

20,658

$0.330

$0.125

$0.082

$0.068

DigiKey

USA . 6,713 parts In-Stock

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$0.330

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$0.125

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$0.082

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Verical

USA . 20,000 parts In-Stock

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Master Electronics

USA . 20,000 parts In-Stock

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Arrow

USA . 12,000 parts In-Stock

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RS (Exports)

UK . 12,000 parts In-Stock

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$0.072

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$0.064

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Rochester

USA . 2,193 parts In-Stock

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$0.052

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$0.043

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Chip1Stop

Japan . 70 parts In-Stock

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Freelance Electronics

USA . 2 parts In-Stock

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$0.012

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$0.012

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Digiode

USA . 2,515 parts In-Stock

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Nova Conductors

Japan . 79 parts In-Stock

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TME

Poland . 452 parts In-Stock

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$0.114

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$0.075

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452

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NAC Semi

USA . 56,000 parts In-Stock

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IBS Electronics

USA . 22,000 parts In-Stock

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ComSIT Distribution GmbH

Germany . 12,000 parts In-Stock

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ComSIT USA

USA . 12,000 parts In-Stock

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Chip Stock

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Vyrian

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Electronic Expediters

USA . 6,600 parts In-Stock

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Flip Electronics

USA . 6,000 parts In-Stock

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Component Sense

UK . 3,089 parts In-Stock

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Speed Components Ltd

Israel . 2,023 parts In-Stock

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Bristol Electronics

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QIE Inc.

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Atlantic Semiconductor

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Q Components

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EPE Components Inc.

USA . 86 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 443 parts In-Stock

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443

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Ampacity Inc.

Singapore . 8,507 parts In-Stock

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Semicontronic

India . 7,847 parts In-Stock

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Corphita

USA . 1,915 parts In-Stock

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Continental Prestige Electronics

USA . 6,233 parts In-Stock

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Argo Parts USA

USA . 1,201 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.081

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Andel Nordic

Denmark . 17 parts In-Stock

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$38.130

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$26.688

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$26.688

17

$38.130

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$26.688

$26.688

Perfect Parts

USA . 26,880 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,107 parts In-Stock

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Kepictronics

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Lixinc

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Problanco Electronics

Mexico . 7,101 parts In-Stock

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SupplyDigital Components

Austria . 6,401 parts In-Stock

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Eastek

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Authorized Procurement Solutions

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Metaverse IC Inc.

Canada . 4,773 parts In-Stock

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TANS Electronics

Latvia . 4,702 parts In-Stock

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Kulean Microsystems

USA . 4,437 parts In-Stock

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Glotronic Ltd.

UK . 2,300 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 527 parts In-Stock

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Overview

Unleash the power of innovation with the 2N6520TA by Onsemi, a top-tier manufacturer known for quality and reliability in the field of Small Signal Bipolar Junction Transistors (BJT). This PNP transistor offers a single configuration in a durable plastic/epoxy package, making it ideal for a wide range of applications. With a high DC current gain and low turn-on/off times, this transistor delivers exceptional performance and efficiency. Trust Onsemi to provide cutting-edge technology that meets your needs and surpasses your expectations. Elevate your projects with the 2N6520TA and experience the difference firsthand.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

The PNP configuration allows for easy integration into a wide range of circuit designs, making it versatile for various applications.

Configuration: SINGLE

The single configuration simplifies circuit layout and reduces the chance of errors during installation.

Package Shape: ROUND

The round package shape provides a compact design that saves space on a circuit board.

Terminal Form: THROUGH-HOLE

The through-hole terminals make it easy to solder and secure the transistor to the PCB, ensuring good electrical connections.

No. of Elements: 1

Having only one element simplifies circuit design and reduces complexity.

No. of Terminals: 3

The three terminals provide necessary connections for proper transistor operation.

Maximum Power Dissipation (Abs): 0.625 W

The high maximum power dissipation allows for the transistor to handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style provides durability and easy handling during installation.

Minimum DC Current Gain (hFE): 15

The minimum DC current gain ensures stable and reliable amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor is suitable for high-temperature environments.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage rating allows the transistor to be used in a variety of high-voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance and reliability.

Maximum Turn On Time (ton): 200 ns

The fast turn-on time ensures quick response in switching applications.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current rating allows for handling moderate current levels.

Maximum Turn Off Time (toff): 3.5 ns

The quick turn-off time ensures fast switching speed in circuit operations.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability and corrosion resistance.

Terminal Position: BOTTOM

The bottom terminal position simplifies PCB layout and improves heat dissipation.

Nominal Transition Frequency (fT): 40 MHz

The high nominal transition frequency allows for fast signal processing and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6520TA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3.5 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

2N6520TA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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