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2N6517C

Onsemi

2N6517C by Onsemi

The Onsemi 2N6517C is a NPN BJT transistor with max. collector-emitter voltage of 400V, max. collector current of 0.5A, and min. DC current gain of 15. It is used in applications requiring high voltage switching or amplification due to its robust silicon construction and cylindrical package style for through-hole mounting.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

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Digiode

USA . 522 parts In-Stock

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Northwest PG Solutions

USA . 2,002 parts In-Stock

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$3.375

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TANS Electronics

Latvia . 7,854 parts In-Stock

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Kulean Microsystems

USA . 7,438 parts In-Stock

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SupplyDigital Components

Austria . 4,914 parts In-Stock

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Corphita

USA . 979 parts In-Stock

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UHIMA Technologies

Türkiye . 750 parts In-Stock

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750

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Native Components

USA . 616 parts In-Stock

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Supply Digital

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Corohmni

South Africa . 181 parts In-Stock

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Problanco Electronics

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Overview

Experience the high-quality performance of the 2N6517C by Onsemi, a top-tier manufacturer in the industry. This Small Signal Bipolar Junction Transistor (BJT) offers reliable functionality and versatility for a wide range of applications. With its NPN polarity and single configuration, this transistor provides exceptional value and benefits to customers seeking a durable and efficient solution. Trust in Onsemi's reputation for excellence and choose the 2N6517C for your electronic projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications due to their high efficiency and low noise characteristics.

Configuration: SINGLE

Simplified design with only one transistor in the package, making it easier to use and integrate into circuits.

Package Shape: ROUND

Round shape allows for easy placement and soldering on circuit boards, optimizing space utilization.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and reliable connections, suitable for applications that require robust soldering.

No. of Terminals: 3

Simple and straightforward connection setup with three terminals, making it user-friendly for circuit assembly.

Package Style (Meter): CYLINDRICAL

Cylindrical package style offers a compact and efficient form factor, ideal for space-constrained designs.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain of 15 ensures reliable and consistent amplification performance in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high-temperature environments, improving reliability.

Maximum Collector-Emitter Voltage: 400 V

High maximum collector-emitter voltage of 400V allows for use in applications that require higher voltage handling capabilities.

Transistor Element Material: SILICON

Silicon material offers excellent performance, reliability, and efficiency for small signal amplification applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate to low power applications efficiently.

Terminal Position: BOTTOM

Bottom terminal position simplifies circuit board layout and connections, enhancing ease of use during assembly.

Nominal Transition Frequency (fT): 200 MHz

Nominal transition frequency of 200MHz enables high-speed switching and amplification capabilities for various signal processing tasks.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6517C attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

400 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6517C Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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