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2N6515ZL1

Onsemi

2N6515ZL1 by Onsemi

2N6515ZL1 by Onsemi is a NPN BJT transistor with hFE of 25, VCEO of 250V, and IC of 0.5A. Ideal for switching applications, it has ton of 200ns and toff of 3.5ns. With fT at 40MHz, this through-hole transistor operates up to 150 °C in a cylindrical package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,081 parts In-Stock

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Digiode

USA . 1,737 parts In-Stock

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Distributors (Availability)

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Native Components

USA . 518 parts In-Stock

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$504.770

100+ parts

$494.674

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$489.627

10k+ parts

$484.579

518

$504.770

$494.674

$489.627

$484.579

Northwest PG Solutions

USA . 1,873 parts In-Stock

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$555.247

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TANS Electronics

Latvia . 7,115 parts In-Stock

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Problanco Electronics

Mexico . 6,133 parts In-Stock

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Kulean Microsystems

USA . 3,430 parts In-Stock

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SupplyDigital Components

Austria . 2,317 parts In-Stock

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Corphita

USA . 596 parts In-Stock

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Corohmni

South Africa . 438 parts In-Stock

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UHIMA Technologies

Türkiye . 105 parts In-Stock

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Overview

Upgrade your electronic projects with the reliable 2N6515ZL1 by Onsemi. Manufactured by a trusted industry leader, this Small Signal Bipolar Junction Transistor (BJT) offers exceptional quality and performance. Ideal for switching applications, this NPN transistor provides a maximum collector-emitter voltage of 250V and a minimum DC current gain of 25, ensuring smooth operation. With a maximum operating temperature of 150 °C, this transistor is built to last. Trust in Onsemi's expertise and invest in the 2N6515ZL1 for seamless functionality and superior results in your designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits and offer good performance for switching applications.

Configuration: SINGLE

Simplified design with a single transistor, making it easier to implement in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in those scenarios.

Package Shape: ROUND

Compact design and uniform shape for easy mounting and integration in circuit boards.

Terminal Form: THROUGH-HOLE

Provides secure and reliable connections, suitable for through-hole mounting on PCBs.

No. of Terminals: 3

Simplified connection with only 3 terminals, reducing complexity in circuit design.

Package Style (Meter): CYLINDRICAL

Cylindrical design for easy handling and installation in various electronic devices.

Minimum DC Current Gain (hFE): 25

Ensures consistent and reliable amplification of current in the circuit.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, making it suitable for a wide range of operating environments.

Maximum Collector-Emitter Voltage: 250 V

Withstands high voltages, ensuring safe and reliable operation in different circuits.

Transistor Element Material: SILICON

Silicon-based construction for improved performance and reliability in electronic applications.

Maximum Turn On Time (ton): 200 ns

Fast turn-on time for quick response in switching applications, improving overall circuit efficiency.

Maximum Collector Current (IC): 0.5 A

Able to handle up to 0.5 A of current, suitable for a variety of low to medium power applications.

Maximum Turn Off Time (toff): 3.5 ns

Fast turn-off time for efficient switching operations, reducing power losses in the circuit.

Terminal Finish: TIN LEAD

Provides good solderability and conductivity for reliable connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position for easy mounting and soldering on PCBs, improving overall assembly process.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency for faster switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6515ZL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3.5 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

2N6515ZL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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