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2N6515RLRP

Onsemi

2N6515RLRP by Onsemi

2N6515RLRP by Onsemi is a NPN BJT transistor with hFE of 25, VCEO of 250V, and IC of 0.5A. Ideal for switching applications, it operates up to 150 °C. Its fT is 40MHz making it suitable for high-frequency circuits in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,309 parts In-Stock

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Vyrian

USA . 2,198 parts In-Stock

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Kulean Microsystems

USA . 7,212 parts In-Stock

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TANS Electronics

Latvia . 7,203 parts In-Stock

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Problanco Electronics

Mexico . 5,635 parts In-Stock

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SupplyDigital Components

Austria . 3,504 parts In-Stock

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Corphita

USA . 2,438 parts In-Stock

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2,438

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Northwest PG Solutions

USA . 1,062 parts In-Stock

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$3.283

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$3.283

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Corohmni

South Africa . 396 parts In-Stock

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UHIMA Technologies

Türkiye . 346 parts In-Stock

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Native Components

USA . 291 parts In-Stock

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$3.249

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$3.249

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Overview

Elevate your electronic designs with the 2N6515RLRP from Onsemi, a high-quality Small Signal Bipolar Junction Transistor that boasts reliability and precision. Manufactured by Onsemi, known for their cutting-edge technology and innovation, this NPN transistor is perfect for switching applications. With a maximum collector-emitter voltage of 250V and a nominal transition frequency of 40MHz, this transistor offers exceptional performance and efficiency. Trust Onsemi to deliver top-notch products that exceed expectations and elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it reliable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and allows for easier integration into electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in on/off states.

Package Shape: ROUND

Round package shape allows for easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong and reliable connections, suitable for soldering onto PCBs.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections and enable multiple configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides compactness and space-saving benefits in electronic assemblies.

Minimum DC Current Gain (hFE): 25

Minimum DC current gain of 25 ensures stable and consistent amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

High operating temperature of 150 °C allows for reliable performance in demanding environments.

Maximum Collector-Emitter Voltage: 250 V

High maximum voltage rating of 250V provides safety and reliability in voltage switching applications.

Transistor Element Material: SILICON

Silicon material offers high performance and efficiency, making the transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 0.5 A

Maximum collector current of 0.5A allows for efficient switching operations and prevents overload conditions.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures secure and low-resistance connections, improving overall performance.

Terminal Position: BOTTOM

Bottom terminal position enhances stability and ease of mounting in electronic circuits.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency of 40MHz indicates fast response and switching speeds, ideal for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6515RLRP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6515RLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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