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BC847C-13-F

Diodes Incorporated

BC847C-13-F by Diodes Incorporated

Diodes Inc. BC847C-13-F is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 420, and fT of 300MHz. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and max. collector-emitter voltage of 45V.

Median Price

$0.045

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 13,179 parts In-Stock

1+ parts

$0.196

100+ parts

$0.074

1k+ parts

$0.047

10k+ parts

-

13,179

$0.196

$0.074

$0.047

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Mouser Electronics

USA . 14,310 parts In-Stock

1+ parts

$0.230

100+ parts

$0.084

1k+ parts

$0.053

10k+ parts

$0.047

14,310

$0.230

$0.084

$0.053

$0.047

Farnell

UK . 10,210 parts In-Stock

1+ parts

-

100+ parts

$0.056

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$0.025

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$0.022

10,210

-

$0.056

$0.025

$0.022

Element14

Singapore . 3,470 parts In-Stock

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-

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$0.034

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$0.033

3,470

-

-

$0.034

$0.033

Arrow

USA . 2,174 parts In-Stock

1+ parts

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$0.013

2,174

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$0.013

Verical

USA . 2,174 parts In-Stock

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$0.013

2,174

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$0.013

Distributors (In-Stock)

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.044

100+ parts

-

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500

$0.044

-

-

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Vyrian

USA . 176,415 parts In-Stock

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176,415

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NAC Semi

USA . 70,000 parts In-Stock

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Rutronik

Germany . 50,000 parts In-Stock

1+ parts

-

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$0.018

50,000

-

-

-

$0.018

IBS Electronics

USA . 30,000 parts In-Stock

1+ parts

-

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$0.014

30,000

-

-

-

$0.014

Bristol Electronics

USA . 20,000 parts In-Stock

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VNN

France . 2,233 parts In-Stock

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2,233

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Distributors (Availability)

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Semicontronic

India . 175,767 parts In-Stock

1+ parts

$0.014

100+ parts

$0.014

1k+ parts

$0.014

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175,767

$0.014

$0.014

$0.014

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Ampacity Inc.

Singapore . 174,843 parts In-Stock

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$0.014

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174,843

$0.014

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Argo Parts USA

USA . 1,592 parts In-Stock

1+ parts

$0.040

100+ parts

-

1k+ parts

-

10k+ parts

$0.039

1,592

$0.040

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-

$0.039

Corohmni

South Africa . 77 parts In-Stock

1+ parts

$0.040

100+ parts

-

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77

$0.040

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Advanced Electronics

New Zealand . 70 parts In-Stock

1+ parts

$0.041

100+ parts

$0.039

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$0.039

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70

$0.041

$0.039

$0.039

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Netroflash

USA . 500 parts In-Stock

1+ parts

$0.044

100+ parts

-

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500

$0.044

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Modulus Dynamics

Lithuania . 750 parts In-Stock

1+ parts

$0.045

100+ parts

$0.044

1k+ parts

$0.043

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-

750

$0.045

$0.044

$0.043

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Component Stockers USA

USA . 1,314,784 parts In-Stock

1+ parts

$0.160

100+ parts

$0.050

1k+ parts

$0.030

10k+ parts

$0.020

1,314,784

$0.160

$0.050

$0.030

$0.020

Continental Prestige Electronics

USA . 7,790 parts In-Stock

1+ parts

$0.186

100+ parts

$0.091

1k+ parts

$0.036

10k+ parts

$0.023

7,790

$0.186

$0.091

$0.036

$0.023

Aztec Data Supply Inc.

USA . 4,497 parts In-Stock

1+ parts

$0.601

100+ parts

-

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4,497

$0.601

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Eastek

USA . 630,000 parts In-Stock

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$0.016

630,000

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$0.016

RC Electronics

USA . 380,000 parts In-Stock

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$0.050

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$0.040

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$0.040

380,000

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$0.040

$0.040

Perfect Parts

USA . 100,800 parts In-Stock

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100,800

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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5,000

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Robosynatics

Brazil . 3,000 parts In-Stock

1+ parts

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100+ parts

$0.937

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$0.937

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$0.937

3,000

-

$0.937

$0.937

$0.937

Lucentia Tech

USA . 3,000 parts In-Stock

1+ parts

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100+ parts

$0.937

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$0.937

10k+ parts

$0.937

3,000

-

$0.937

$0.937

$0.937

Overview

Enhance the performance of your electronic devices with the BC847C-13-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability in their products. The BC847C-13-F falls under the category of Small Signal Bipolar Junction Transistors (BJT), making it ideal for switching applications. With its NPN polarity and compact rectangular shape, this transistor offers maximum power dissipation of 0.35 W and a minimum DC current gain of 420. Trust Diodes Incorporated to deliver exceptional value and benefits to meet all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and reliability, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN polarity allows for easy integration into circuits, making it versatile and user-friendly.

Configuration: SINGLE

The single configuration simplifies circuit design and reduces complexity, ideal for straightforward applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring high performance and efficiency in this usage scenario.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

Rectangular shape allows for compact placement on PCBs, optimizing space utilization in electronic designs.

Terminal Form: GULL WING

Gull wing terminals offer reliable solder joint connections, enhancing the overall durability of the product.

No. of Terminals: 3

Three terminals provide flexibility for multiple connection options, enhancing circuit design possibilities.

Maximum Power Dissipation (Abs): 0.35 W

With a high power dissipation capacity, this transistor can handle varying loads without overheating.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on the board, ideal for miniaturized applications.

Minimum DC Current Gain (hFE): 420

High DC current gain ensures amplification of weak signals, improving overall signal integrity.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable performance in harsh environments.

Maximum Collector-Emitter Voltage: 45 V

With a high collector-emitter voltage rating, the transistor can withstand voltage fluctuations without damage.

Transistor Element Material: SILICON

Silicon material provides superior performance and reliability, making it a popular choice for transistors.

Minimum Operating Temperature: -65 °C

Wide operating temperature range ensures consistent performance in both extreme cold and hot conditions.

Maximum Collector Current (IC): 0.1 A

High collector current rating enables the transistor to handle higher current loads without failure.

Terminal Finish: MATTE TIN

Matte tin finish on terminals offers excellent solderability and corrosion resistance for enhanced durability.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connection options, accommodating various design requirements.

Maximum Time At Peak Reflow Temperature (s): 30

Adequate time allowance at peak reflow temperature ensures proper solder joint formation, minimizing production defects.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for reliable soldering during assembly processes.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standard ensures high quality and reliability for automotive applications.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency enables fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847C-13-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847C-13-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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