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2N6515RL1

Onsemi

2N6515RL1 by Onsemi

2N6515RL1 by Onsemi is a NPN BJT transistor with hFE of 25, VCEO of 250V, and IC of 0.5A. Ideal for switching applications due to its fast ton of 200ns and toff of 3.5ns at an operating temp up to 150 °C. Its fT is rated at 40MHz making it suitable for high-frequency operations.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 2,151 parts In-Stock

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Vyrian

USA . 1,352 parts In-Stock

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Native Components

USA . 525 parts In-Stock

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$153.233

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$147.104

525

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$147.104

Northwest PG Solutions

USA . 1,551 parts In-Stock

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Kulean Microsystems

USA . 5,360 parts In-Stock

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TANS Electronics

Latvia . 5,241 parts In-Stock

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Problanco Electronics

Mexico . 5,082 parts In-Stock

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Corphita

USA . 1,189 parts In-Stock

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UHIMA Technologies

Türkiye . 709 parts In-Stock

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Corohmni

South Africa . 457 parts In-Stock

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SupplyDigital Components

Austria . 283 parts In-Stock

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Overview

Unleash the power of innovation with the 2N6515RL1 by Onsemi, a top-quality Small Signal Bipolar Junction Transistor (BJT) that excels in SWITCHING applications. Manufactured by industry leader Onsemi, this NPN transistor offers unmatched reliability and performance. With a maximum collector-emitter voltage of 250V and a nominal transition frequency of 40 MHz, this transistor is a game-changer in electronic circuits. Experience seamless operation and enhanced efficiency with the 2N6515RL1, making it the ultimate choice for all your switching needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good durability and protection for the transistor, ensuring a longer lifespan.

Polarity or Channel Type: NPN

Commonly used in amplification and switching applications, making it versatile.

Configuration: SINGLE

Simplifies circuit design and integration, suitable for straightforward applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, offering reliable performance in such scenarios.

Package Shape: ROUND

Enables easy mounting and soldering, contributing to efficient assembly processes.

Terminal Form: THROUGH-HOLE

Facilitates secure connection to the circuit board, ensuring stable contact.

No. of Terminals: 3

Simplified pin configuration for easy integration and compatibility with different circuits.

Package Style (Meter): CYLINDRICAL

Compact design that can fit in tight spaces, beneficial for applications with space constraints.

Minimum DC Current Gain (hFE): 25

Provides consistent and reliable amplification in a circuit, enhancing signal strength.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures, suitable for applications where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 250 V

Handles high voltages safely and effectively, enhancing the overall robustness of the transistor.

Transistor Element Material: SILICON

Offers excellent electrical properties, ensuring stable and predictable performance.

Maximum Turn On Time (ton): 200 ns

Fast switching speed for quick response in applications requiring rapid switching.

Maximum Collector Current (IC): 0.5 A

Supports moderate current levels, suitable for various low to medium power applications.

Maximum Turn Off Time (toff): 3.5 ns

Quick turn-off time for efficient switching and reduced power dissipation.

Terminal Finish: TIN LEAD

Provides good conductivity and corrosion resistance, ensuring reliable connections.

Terminal Position: BOTTOM

Facilitates easy mounting on the circuit board, enhancing the overall installation process.

Nominal Transition Frequency (fT): 40 MHz

High transition frequency for excellent high-frequency performance in amplification and switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6515RL1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

250 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

3.5 ns

Maximum Turn On Time (ton):

200 ns

Trade Compliance

2N6515RL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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