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JANTX2N2222AUBT/R

Microchip Technology

JANTX2N2222AUBT/R by Microchip Technology

JANTX2N2222AUBT/R by Microchip is a NPN BJT transistor for switching applications. It has hFE of 30, Vce of 50V, and Ic of 0.8A. With a turn on time of 35ns and turn off time of 300ns, it's ideal for fast-switching circuits in military-grade electronics per MIL-19500/255 standards.

Median Price

$7.660

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 9 parts In-Stock

1+ parts

$5.689

100+ parts

-

1k+ parts

-

10k+ parts

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9

$5.689

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Mouser Electronics

USA . 24 parts In-Stock

1+ parts

$7.660

100+ parts

$7.050

1k+ parts

$5.740

10k+ parts

-

24

$7.660

$7.050

$5.740

-

Adafruit Industries

USA . 4,127 parts In-Stock

1+ parts

$221.582

100+ parts

$201.640

1k+ parts

$181.697

10k+ parts

-

4,127

$221.582

$201.640

$181.697

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Verical

USA . 9 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

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9

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Distributors (In-Stock)

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Nova Conductors

Japan . 45 parts In-Stock

1+ parts

$5.920

100+ parts

-

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45

$5.920

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Vyrian

USA . 6,245 parts In-Stock

1+ parts

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6,245

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 232 parts In-Stock

1+ parts

$0.121

100+ parts

-

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232

$0.121

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-

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Aztec Data Supply Inc.

USA . 258 parts In-Stock

1+ parts

$0.836

100+ parts

-

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-

10k+ parts

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258

$0.836

-

-

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Component Stockers USA

USA . 4,439 parts In-Stock

1+ parts

$5.680

100+ parts

$7.140

1k+ parts

$5.650

10k+ parts

-

4,439

$5.680

$7.140

$5.650

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Continental Prestige Electronics

USA . 2,476 parts In-Stock

1+ parts

$5.850

100+ parts

-

1k+ parts

-

10k+ parts

$5.733

2,476

$5.850

-

-

$5.733

Semicontronic

India . 2,818 parts In-Stock

1+ parts

$188.340

100+ parts

$183.632

1k+ parts

$182.690

10k+ parts

-

2,818

$188.340

$183.632

$182.690

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Ampacity Inc.

Singapore . 2,714 parts In-Stock

1+ parts

$188.340

100+ parts

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2,714

$188.340

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Authorized Procurement Solutions

USA . 15,000 parts In-Stock

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15,000

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Microchip USA

USA . 9,843 parts In-Stock

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9,843

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QUARKTWIN TECHNOLOGY LTD

USA . 7,287 parts In-Stock

1+ parts

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7,287

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Marpe Global Electronics

Taiwan . 7,189 parts In-Stock

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7,189

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QualityLine Systems

Poland . 5,186 parts In-Stock

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5,186

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XL Components Corporation

Australia . 2,353 parts In-Stock

1+ parts

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2,353

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$5.802

1k+ parts

$5.624

10k+ parts

$5.506

2,000

-

$5.802

$5.624

$5.506

Argo Parts USA

USA . 1,193 parts In-Stock

1+ parts

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1,193

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GreenTree Electronics

Israel . 500 parts In-Stock

1+ parts

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500

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Robosynatics

Brazil . 20 parts In-Stock

1+ parts

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20

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Overview

Unlock the power of advanced technology with the JANTX2N2222AUBT/R by Microchip Technology. This high-quality Small Signal Bipolar Junction Transistor (BJT) guarantees reliable performance in switching applications. Made with premium materials and precision engineering, this NPN transistor offers superior functionality and durability. Say goodbye to inefficiency and hello to seamless operation with the JANTX2N2222AUBT/R. Trust Microchip Technology to deliver cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This durable material ensures that the transistor is resistant to high temperatures and harsh environments, making it a reliable choice for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifying and switching applications, providing versatility and flexibility in circuit design.

Configuration: SINGLE

The single configuration simplifies circuit layout and design, making the transistor easy to integrate into existing systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient performance.

Surface Mount: YES

With surface mount capabilities, this transistor is easy to solder onto PCBs, saving space and simplifying assembly processes.

Package Shape: RECTANGULAR

The rectangular shape of the package allows for efficient use of space on a PCB, making it ideal for compact designs.

Terminal Form: NO LEAD

The no-lead terminal form reduces the risk of solder bridges and ensures consistent contact with the PCB, improving reliability.

No. of Terminals: 3

The three terminals provide straightforward connections in a variety of circuit configurations, offering versatility in design.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB while still providing ample room for other components, ideal for compact designs.

Minimum DC Current Gain (hFE): 30

With a minimum DC current gain of 30, this transistor offers reliable amplification for precise control and signal processing.

Maximum Collector-Emitter Voltage: 50 V

The high collector-emitter voltage rating ensures that the transistor can handle a wide range of applications without risk of damage.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency and low noise, making them suitable for a wide range of applications in various industries.

Maximum Turn On Time (ton): 35 ns

The fast turn-on time of 35 nanoseconds ensures quick response and minimal delay in switching applications.

Maximum Collector Current (IC): 0.8 A

With a maximum collector current of 0.8 amps, this transistor can handle moderate power applications with ease.

Maximum Turn Off Time (toff): 300 ns

The maximum turn-off time of 300 nanoseconds ensures efficient switching and minimal power loss in dynamic circuits.

Terminal Position: DUAL

The dual terminal position provides multiple mounting options for flexibility in circuit layout and design.

Reference Standard: MIL-19500/255

Compliance with MIL-19500/255 standards ensures that this transistor meets rigorous military specifications for reliability and performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) JANTX2N2222AUBT/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-CDSO-N3

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

MIL-19500/255

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

JANTX2N2222AUBT/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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