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BC547ATA

Onsemi

BC547ATA by Onsemi

BC547ATA by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.1A, ideal for switching applications. With a min DC current gain of 110 and max power dissipation of 0.625W, it operates at up to 150°C making it suitable for various electronic circuits in different industries. The package style is cylindrical with matte tin finish and through-hole terminals.

Median Price

$0.040

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 1 parts In-Stock

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$0.007

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1

$0.007

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Adafruit Industries

USA . 350 parts In-Stock

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$0.050

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$0.048

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$0.048

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350

$0.050

$0.048

$0.048

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Rochester

USA . 58,363 parts In-Stock

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$0.034

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$0.028

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$0.025

58,363

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$0.034

$0.028

$0.025

DigiKey

USA . 15,426 parts In-Stock

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15,426

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Flip Electronics (Authorized)

USA . 15,426 parts In-Stock

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15,426

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Chip1Stop

Japan . 1,071 parts In-Stock

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$0.046

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$0.029

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1,071

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$0.046

$0.029

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Verical

USA . 700 parts In-Stock

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$0.032

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700

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$0.032

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RS (Exports)

UK . 200 parts In-Stock

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$0.048

200

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$0.048

Distributors (In-Stock)

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Digiode

USA . 1,205 parts In-Stock

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$0.006

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$0.006

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Nova Conductors

Japan . 98 parts In-Stock

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$0.052

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Chip Stock

USA . 63,000 parts In-Stock

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Flip Electronics

USA . 15,426 parts In-Stock

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15,426

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Vyrian

USA . 12,188 parts In-Stock

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VNN

France . 2,608 parts In-Stock

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Cyclops Electronics Ltd

UK . 1,300 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 12,455 parts In-Stock

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$0.005

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$0.005

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Semicontronic

India . 11,793 parts In-Stock

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$0.005

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$0.005

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$0.005

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11,793

$0.005

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Corphita

USA . 1,055 parts In-Stock

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$0.005

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1,055

$0.005

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Corohmni

South Africa . 418 parts In-Stock

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$0.006

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418

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Argo Parts USA

USA . 424 parts In-Stock

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$0.050

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$0.048

424

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$0.048

Advanced Electronics

New Zealand . 350 parts In-Stock

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$0.050

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$0.048

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$0.048

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350

$0.050

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Netroflash

USA . 2,000 parts In-Stock

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$0.052

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$0.051

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$0.052

$0.051

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Modulus Dynamics

Lithuania . 900 parts In-Stock

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$0.056

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$0.056

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$0.054

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900

$0.056

$0.056

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Aztec Data Supply Inc.

USA . 4,046 parts In-Stock

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$1.579

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Perfect Parts

USA . 44,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,060 parts In-Stock

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SupplyDigital Components

Austria . 7,191 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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Kulean Microsystems

USA . 4,621 parts In-Stock

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Problanco Electronics

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 964 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 495 parts In-Stock

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495

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Allen Electronics Distributors

USA . 200 parts In-Stock

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$0.076

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$0.068

200

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$0.068

Robosynatics

Brazil . 30 parts In-Stock

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Lucentia Tech

USA . 30 parts In-Stock

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Overview

Enhance your electronic projects with the high-quality BC547ATA by Onsemi. As a leading manufacturer in the industry, Onsemi delivers reliable and efficient components, making this NPN transistor ideal for switching applications. With a maximum collector-emitter voltage of 45V and a minimum DC current gain of 110, this transistor offers exceptional performance. Whether you're a hobbyist or a professional, the BC547ATA provides value, reliability, and versatility for all your circuit needs. Trust Onsemi to bring innovation and excellence to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This package material offers good durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and versatility.

Configuration: SINGLE

A single configuration simplifies circuit design and makes this transistor easy to integrate into various electronic systems.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides reliable performance in on/off control circuits.

Package Shape: ROUND

The round package shape allows for easy mounting and ensures efficient heat dissipation, contributing to the overall reliability of the transistor.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and make it easy to solder the transistor onto a circuit board.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625 W, this transistor can handle moderate power levels without overheating, ensuring its longevity.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers a compact form factor and efficient use of space in electronic designs.

Minimum DC Current Gain (hFE): 110

A minimum DC current gain of 110 ensures stable and consistent amplification characteristics in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high-temperature environments and prolonged use.

Maximum Collector-Emitter Voltage: 45 V

The maximum collector-emitter voltage of 45 V allows for safe operation in a wide range of voltage levels.

Transistor Element Material: SILICON

Silicon is a reliable and widely used material for transistor elements, ensuring good performance and longevity.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current levels in switching applications.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and electrical conductivity, ensuring reliable connections in the circuit.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and soldering of the transistor onto a circuit board.

Nominal Transition Frequency (fT): 300 MHz

With a nominal transition frequency of 300 MHz, this transistor offers high-speed switching capabilities for efficient circuit operation.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC547ATA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

110

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC547ATA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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