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BC547BTF

Onsemi

BC547BTF by Onsemi

BC547BTF by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 200 and nominal transition frequency of 300MHz, it offers reliable performance in a cylindrical package suitable for through-hole mounting. Operating at up to 150°C, this transistor has a max power dissipation of 0.625W making it versatile for various electronic designs.

Median Price

$0.118

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 8,792 parts In-Stock

1+ parts

$0.040

100+ parts

$0.024

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8,792

$0.040

$0.024

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Adafruit Industries

USA . 81 parts In-Stock

1+ parts

$0.079

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$0.075

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$0.075

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81

$0.079

$0.075

$0.075

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Distrelec

Netherlands . 1,776 parts In-Stock

1+ parts

$0.214

100+ parts

$0.203

1k+ parts

$0.174

10k+ parts

$0.157

1,776

$0.214

$0.203

$0.174

$0.157

Newark

USA . 11,629 parts In-Stock

1+ parts

$0.268

100+ parts

$0.103

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$0.090

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11,629

$0.268

$0.103

$0.090

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DigiKey

USA . 6,336 parts In-Stock

1+ parts

$0.280

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$0.106

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$0.069

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$0.052

6,336

$0.280

$0.106

$0.069

$0.052

Mouser Electronics

USA . 573 parts In-Stock

1+ parts

$0.280

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$0.106

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$0.069

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$0.056

573

$0.280

$0.106

$0.069

$0.056

Element14

Singapore . 14,774 parts In-Stock

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-

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$0.143

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$0.059

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$0.058

14,774

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$0.143

$0.059

$0.058

Chip1Stop

Japan . 14,002 parts In-Stock

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$0.094

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$0.061

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$0.043

14,002

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$0.094

$0.061

$0.043

Avnet

USA . 14,000 parts In-Stock

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Verical

USA . 12,000 parts In-Stock

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Master Electronics

USA . 12,000 parts In-Stock

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Rochester

USA . 3,113 parts In-Stock

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$0.042

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$0.035

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$0.031

3,113

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$0.042

$0.035

$0.031

Farnell

UK . 2,321 parts In-Stock

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100+ parts

$0.702

1k+ parts

$0.326

10k+ parts

$0.320

2,321

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$0.702

$0.326

$0.320

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,519 parts In-Stock

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$0.032

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2,519

$0.032

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TME

Poland . 85 parts In-Stock

1+ parts

$0.270

100+ parts

$0.104

1k+ parts

$0.062

10k+ parts

$0.053

85

$0.270

$0.104

$0.062

$0.053

Nova Conductors

Japan . 450 parts In-Stock

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$1.000

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450

$1.000

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IBS Electronics

USA . 40,000 parts In-Stock

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$0.040

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$0.040

Chip Stock

USA . 38,000 parts In-Stock

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Electro Sonic

Canada . 14,000 parts In-Stock

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Vyrian

USA . 8,663 parts In-Stock

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NAC Semi

USA . 4,000 parts In-Stock

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VNN

France . 3,549 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,199 parts In-Stock

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Holdelec - ElecDif-Pro

France . 1,199 parts In-Stock

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Rebound Electronics

UK . 1,004 parts In-Stock

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Cyclops Electronics Ltd

UK . 912 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 8,564 parts In-Stock

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$0.029

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Semicontronic

India . 8,393 parts In-Stock

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8,393

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Corphita

USA . 1,423 parts In-Stock

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Corohmni

South Africa . 432 parts In-Stock

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$0.034

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432

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Argo Parts USA

USA . 1,904 parts In-Stock

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$0.059

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$0.057

1,904

$0.059

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$0.057

Advanced Electronics

New Zealand . 81 parts In-Stock

1+ parts

$0.079

100+ parts

$0.075

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$0.075

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81

$0.079

$0.075

$0.075

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Modulus Dynamics

Lithuania . 65 parts In-Stock

1+ parts

$0.085

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$0.084

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$0.082

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65

$0.085

$0.084

$0.082

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Continental Prestige Electronics

USA . 10,537 parts In-Stock

1+ parts

$0.322

100+ parts

$0.127

1k+ parts

$0.048

10k+ parts

$0.036

10,537

$0.322

$0.127

$0.048

$0.036

Aztec Data Supply Inc.

USA . 2,003 parts In-Stock

1+ parts

$0.949

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2,003

$0.949

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Aranea Global

USA . 500 parts In-Stock

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$0.980

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$0.941

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500

$0.980

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$0.941

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Perfect Parts

USA . 141,120 parts In-Stock

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Metaverse IC Inc.

Canada . 54,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 23,777 parts In-Stock

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23,777

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Kepictronics

USA . 18,000 parts In-Stock

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Futuretech Components

Singapore . 11,658 parts In-Stock

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11,658

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Robosynatics

Brazil . 8,926 parts In-Stock

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$0.075

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$0.074

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$0.074

8,926

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$0.075

$0.074

$0.074

Lucentia Tech

USA . 8,926 parts In-Stock

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$0.075

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$0.074

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$0.074

8,926

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$0.075

$0.074

$0.074

Kulean Microsystems

USA . 7,852 parts In-Stock

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7,852

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Allen Electronics Distributors

USA . 3,000 parts In-Stock

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$0.050

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Problanco Electronics

Mexico . 2,874 parts In-Stock

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2,874

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SupplyDigital Components

Austria . 1,960 parts In-Stock

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TANS Electronics

Latvia . 800 parts In-Stock

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800

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UHIMA Technologies

Türkiye . 586 parts In-Stock

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586

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Supply Digital

USA . 244 parts In-Stock

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244

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Overview

Enhance your electronic projects with the BC547BTF by Onsemi! This small signal bipolar junction transistor (BJT) offers reliable performance and high-quality construction, backed by the reputable manufacturer, Onsemi. Ideal for switching applications, this NPN transistor boasts a maximum collector-emitter voltage of 45V and a minimum DC current gain of 200. With a maximum operating temperature of 150°C and a transition frequency of 300 MHz, the BC547BTF is a versatile component that delivers exceptional value and benefits to customers seeking efficient and effective solutions for their electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and durability, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this transistor versatile in its applications.

Configuration: SINGLE

Simplifies circuit design and layout, making it easier to incorporate this transistor into electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into circuits or PCBs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure connections and easy soldering during circuit assembly.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections and allow for various configurations.

Maximum Power Dissipation (Abs): 0.625 W

Sufficient power dissipation capability for small signal applications, ensuring reliable operation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style is compact and space-efficient, making it suitable for small electronic devices.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures amplification of signals with minimal power input.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for use in various environments without compromising performance.

Maximum Collector-Emitter Voltage: 45 V

Allows for safe operation within a wide voltage range, making the transistor reliable and versatile.

Transistor Element Material: SILICON

Silicon material provides excellent semiconductor properties, enhancing the transistor's overall performance.

Maximum Collector Current (IC): 0.1 A

Sufficient collector current rating for small signal applications, ensuring reliable operation under load.

Terminal Finish: MATTE TIN

Matte tin finish on terminals improves solderability and provides corrosion resistance, ensuring long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and ensures easy integration into circuit designs.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency allows for fast signal switching, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC547BTF attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC547BTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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