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2N6517T&A

Continental Device India

2N6517T&A by Continental Device India

2N6517T&A by Continental Device India is a NPN BJT with max. power dissipation of 0.625W, hFE of 15, and VCE of 350V. Ideal for small signal applications in electronics due to its high transition frequency of 40MHz and max. collector current of 0.5A.

Median Price

$0.108

Lifecycle Status

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2

In-Stock Inventory

< 1k

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Nova Conductors

Japan . 10 parts In-Stock

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Vyrian

USA . 343 parts In-Stock

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343

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Argo Parts USA

USA . 3,353 parts In-Stock

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$0.105

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Continental Prestige Electronics

USA . 1,592 parts In-Stock

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Netroflash

USA . 1,000 parts In-Stock

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$0.108

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$0.106

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AZTECH Wire

Italy . 405 parts In-Stock

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$15.294

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Overview

Enhance your electronic projects with the 2N6517T&A by Continental Device India, a high-quality Small Signal Bipolar Junction Transistor. With its NPN polarity and single configuration, this transistor is perfect for a wide range of applications. From amplification to switching, this versatile component offers reliability and performance that you can trust. Trust Continental Device India's expertise in semiconductor manufacturing and bring value to your designs with the 2N6517T&A.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, making this product versatile in its applications.

Configuration: SINGLE

The single configuration simplifies circuit designs and makes it easier to integrate into electronic systems.

Maximum Power Dissipation (Abs): 0.625 W

With a high maximum power dissipation, this transistor can handle heat dissipation efficiently, improving overall performance and reliability.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage allows for use in high voltage applications, providing flexibility in circuit design.

Nominal Transition Frequency (fT): 40 MHz

The high transition frequency allows for fast switching speeds and high-frequency operation, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6517T&A attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Continental Device India

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6517T&A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Continental Device India

Continental Device India Ltd., (CDIL) is an ISO 9001, IATF 16949, and ISO 14001 certified company that pioneered the manufacturing of Silicon Semiconductor Chips and Devices in India in 1964. It launched its Electronic Manufacturing Services (EMS) division (Deltron) in 1982. Manufacturing semiconductors for over 50 years, has created a name for CDIL in India and a brand that is recognized globally. This has only been possible by adhering to international standards of quality, constant technology and process upgrades, and due to the hard work of a team of dedicated professionals who have laid down the standards for R&D, engineering and management in India.

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