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2N6517CTA

Onsemi

2N6517CTA by Onsemi

2N6517CTA by Onsemi is a NPN BJT with max. collector-emitter voltage of 350V, max. collector current of 0.5A, and min. DC current gain of 15. It is used in applications requiring small signal amplification in electronic circuits due to its high transition frequency of 40MHz and max. power dissipation of 0.625W.

Median Price

$0.042

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 461,918 parts In-Stock

1+ parts

-

100+ parts

$0.044

1k+ parts

$0.036

10k+ parts

$0.032

461,918

-

$0.044

$0.036

$0.032

Verical

USA . 461,024 parts In-Stock

1+ parts

-

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$0.040

461,024

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$0.040

Distributors (In-Stock)

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Digiode

USA . 980 parts In-Stock

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$0.046

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980

$0.046

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Vyrian

USA . 2,075 parts In-Stock

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$0.048

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2,075

$0.048

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Flip Electronics

USA . 120,000 parts In-Stock

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120,000

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Nova Conductors

Japan . 900 parts In-Stock

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900

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VNN

France . 51 parts In-Stock

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51

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Distributors (Availability)

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Corphita

USA . 2,889 parts In-Stock

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$0.043

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2,889

$0.043

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Corohmni

South Africa . 327 parts In-Stock

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$0.048

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327

$0.048

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QUARKTWIN TECHNOLOGY LTD

USA . 29,396 parts In-Stock

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Kepictronics

USA . 20,000 parts In-Stock

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Perfect Parts

USA . 15,625 parts In-Stock

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Problanco Electronics

Mexico . 7,662 parts In-Stock

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Kulean Microsystems

USA . 7,294 parts In-Stock

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Microchip USA

USA . 5,307 parts In-Stock

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SupplyDigital Components

Austria . 5,259 parts In-Stock

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TANS Electronics

Latvia . 4,698 parts In-Stock

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Continental Prestige Electronics

USA . 4,165 parts In-Stock

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Authorized Procurement Solutions

USA . 3,500 parts In-Stock

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3,500

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Metaverse IC Inc.

Canada . 2,000 parts In-Stock

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Supply Digital

USA . 1,816 parts In-Stock

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Argo Parts USA

USA . 1,319 parts In-Stock

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1,319

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Aranea Global

USA . 1,000 parts In-Stock

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1,000

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UHIMA Technologies

Türkiye . 695 parts In-Stock

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695

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Overview

Unleash the power of innovation with the Onsemi 2N6517CTA Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this NPN transistor offers reliability and quality like no other. Ideal for a wide range of applications, this transistor provides exceptional performance and efficiency. Experience the value and benefits of this product as it delivers unparalleled results, making it the perfect choice for all your electronic needs. Upgrade to the 2N6517CTA and unlock endless possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the transistor lightweight and durable, ideal for applications where weight and longevity are important factors.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product versatile for various electronic applications.

Configuration: SINGLE

Single configuration simplifies circuit design and makes it easier to integrate into electronic systems.

Package Shape: ROUND

Round package shape allows for easy mounting and ensures efficient heat dissipation.

Maximum Power Dissipation (Abs): 0.625 W

With a maximum power dissipation of 0.625W, this transistor can handle moderate power levels, suitable for many applications.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact form factor, making it easy to fit into tight spaces.

Minimum DC Current Gain (hFE): 15

Minimum DC current gain of 15 ensures consistent and reliable amplification in electronic circuits.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperatures, ideal for industrial applications.

Maximum Collector-Emitter Voltage: 350 V

The high maximum collector-emitter voltage of 350V allows for use in high voltage applications, providing versatility in electronic designs.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and efficiency, making this transistor a dependable choice for electronic circuits.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5A, this transistor can handle moderate currents, suitable for various electronic applications.

Terminal Finish: MATTE TIN

Matte tin finish on terminals improves solderability and ensures robust electrical connections, increasing the reliability of the product.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and ensures a clean and organized circuit layout.

Nominal Transition Frequency (fT): 40 MHz

With a nominal transition frequency of 40MHz, this transistor is capable of operating at high frequencies, making it suitable for signal processing and RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N6517CTA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

350 V

Configuration:

Minimum DC Current Gain (hFE):

15

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N6517CTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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