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MMBT2907ALT3G

Onsemi

MMBT2907ALT3G by Onsemi

MMBT2907ALT3G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package and can handle up to 0.6A of collector current. The device operates at temperatures up to 150°C and features a turn-on time of 45ns.

Median Price

$0.049

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 30,812 parts In-Stock

1+ parts

$0.102

100+ parts

$0.045

1k+ parts

$0.027

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$0.025

30,812

$0.102

$0.045

$0.027

$0.025

Mouser Electronics

USA . 39,397 parts In-Stock

1+ parts

$0.150

100+ parts

$0.055

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$0.035

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$0.034

39,397

$0.150

$0.055

$0.035

$0.034

Newark

USA . 17,249 parts In-Stock

1+ parts

$0.161

100+ parts

$0.079

1k+ parts

$0.046

10k+ parts

$0.036

17,249

$0.161

$0.079

$0.046

$0.036

EBV Elektronik

Germany . 180,000 parts In-Stock

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Farnell

UK . 65,216 parts In-Stock

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$0.049

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$0.049

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$0.023

Element14

Singapore . 65,116 parts In-Stock

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$0.045

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$0.039

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$0.045

$0.039

Rochester

USA . 60,000 parts In-Stock

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$0.020

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$0.017

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$0.015

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$0.020

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$0.015

Verical

USA . 60,000 parts In-Stock

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Chip1Stop

Japan . 59,456 parts In-Stock

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$0.028

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59,456

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$0.028

$0.021

$0.019

RS (Exports)

UK . 31,400 parts In-Stock

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$0.050

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Master Electronics

USA . 30,000 parts In-Stock

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$0.014

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$0.014

Distributors (In-Stock)

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Digiode

USA . 952 parts In-Stock

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$0.019

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952

$0.019

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Nova Conductors

Japan . 500 parts In-Stock

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$0.051

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500

$0.051

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Chip Stock

USA . 793,030 parts In-Stock

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Sternenhof Electronics

Switzerland . 200,000 parts In-Stock

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IBS Electronics

USA . 180,000 parts In-Stock

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Vyrian

USA . 53,888 parts In-Stock

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NAC Semi

USA . 50,000 parts In-Stock

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Connector Distribution Corp

USA . 21,782 parts In-Stock

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Right Parts Inc.

USA . 21,782 parts In-Stock

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Bristol Electronics

USA . 10,559 parts In-Stock

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Atlantic Semiconductor

USA . 9,769 parts In-Stock

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Prism Electronics

USA . 469 parts In-Stock

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469

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Elcom Components

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Distributors (Availability)

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Corohmni

South Africa . 284 parts In-Stock

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$0.014

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Semicontronic

India . 51,624 parts In-Stock

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Ampacity Inc.

Singapore . 49,936 parts In-Stock

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Corphita

USA . 2,443 parts In-Stock

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Argo Parts USA

USA . 2,854 parts In-Stock

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$0.038

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Modulus Dynamics

Lithuania . 550 parts In-Stock

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$0.044

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$0.043

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$0.042

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550

$0.044

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$1.463

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$1.389

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$1.389

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270

$1.463

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$1.389

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Aztec Data Supply Inc.

USA . 144 parts In-Stock

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$1.735

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$1.735

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RC Electronics

USA . 500,000 parts In-Stock

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$0.010

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Perfect Parts

USA . 459,833 parts In-Stock

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Continental Prestige Electronics

USA . 100,430 parts In-Stock

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$0.044

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$0.026

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$0.019

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 38,417 parts In-Stock

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Allen Electronics Distributors

USA . 34,400 parts In-Stock

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Lixinc

USA . 9,378 parts In-Stock

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Kulean Microsystems

USA . 7,123 parts In-Stock

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TANS Electronics

Latvia . 4,790 parts In-Stock

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SupplyDigital Components

Austria . 3,616 parts In-Stock

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Kepictronics

USA . 2,220 parts In-Stock

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Problanco Electronics

Mexico . 1,964 parts In-Stock

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UHIMA Technologies

Türkiye . 305 parts In-Stock

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Robosynatics

Brazil . 100 parts In-Stock

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Lucentia Tech

USA . 100 parts In-Stock

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$0.537

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$0.537

Overview

Enhance your electronic projects with the MMBT2907ALT3G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor perfect for switching applications. Manufactured by Onsemi, a trusted industry leader, this PNP transistor offers reliable performance and durability. With a maximum collector-emitter voltage of 60V and a minimum DC current gain of 100, this transistor provides efficient power dissipation and fast switching speeds. Its compact rectangular package shape and gull wing terminals make it easy to integrate into your designs. Trust the MMBT2907ALT3G to deliver superior performance and value to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for switching applications, making this transistor suitable for such purposes.

Configuration: SINGLE

A single configuration simplifies the design and implementation of the transistor in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Being surface mountable makes it easier to integrate into PCB designs, saving space and enabling automated assembly processes.

Maximum Power Dissipation (Abs): 0.3 W

With a high maximum power dissipation rating, this transistor can handle power efficiently without overheating.

Maximum Collector-Emitter Voltage: 60 V

The high voltage rating allows the transistor to be used in a wide range of applications that require higher voltages.

Nominal Transition Frequency (fT): 200 MHz

With a high transition frequency, this transistor can switch rapidly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2907ALT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

MMBT2907ALT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-652-7302, 5961016527302

NIIN

016527302

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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