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SMMBT2907ALT3G

Onsemi

SMMBT2907ALT3G by Onsemi

SMMBT2907ALT3G by Onsemi is a PNP BJT with 60V VCEO, 0.6A IC, and 200MHz fT. Ideal for small outline applications requiring high DC current gain and fast turn-on/off times. Suitable for automotive electronics due to AEC-Q101 compliance and peak reflow temperature of 260°C.

Median Price

$0.071

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 60,001 parts In-Stock

1+ parts

$0.170

100+ parts

$0.063

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$0.042

10k+ parts

$0.038

60,001

$0.170

$0.063

$0.042

$0.038

Arrow

USA . 14 parts In-Stock

1+ parts

$0.179

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14

$0.179

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Flip Electronics (Authorized)

USA . 1,578,020 parts In-Stock

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DigiKey

USA . 539,020 parts In-Stock

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$0.100

539,020

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$0.100

Newark

USA . 50,000 parts In-Stock

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$0.053

50,000

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$0.053

Chip1Stop

Japan . 9,830 parts In-Stock

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$0.060

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$0.034

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$0.030

9,830

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$0.060

$0.034

$0.030

Verical

USA . 9,830 parts In-Stock

1+ parts

-

100+ parts

$0.071

1k+ parts

$0.038

10k+ parts

$0.027

9,830

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$0.071

$0.038

$0.027

Rochester

USA . 451 parts In-Stock

1+ parts

-

100+ parts

$0.020

1k+ parts

$0.017

10k+ parts

$0.015

451

-

$0.020

$0.017

$0.015

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,121 parts In-Stock

1+ parts

$0.022

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$0.022

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Nova Conductors

Japan . 300 parts In-Stock

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$0.241

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300

$0.241

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Flip Electronics

USA . 539,020 parts In-Stock

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539,020

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NAC Semi

USA . 240,000 parts In-Stock

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Vyrian

USA . 166,548 parts In-Stock

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166,548

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Electro Sonic

Canada . 100,000 parts In-Stock

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$0.029

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$0.029

ComSIT USA

USA . 37,500 parts In-Stock

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37,500

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ComSIT Distribution GmbH

Germany . 37,500 parts In-Stock

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IBS Electronics

USA . 30,000 parts In-Stock

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$0.034

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$0.034

Chip Stock

USA . 29,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 9,575 parts In-Stock

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Semi Source

USA . 4,131 parts In-Stock

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Bristol Electronics

USA . 3,028 parts In-Stock

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Atlantic Semiconductor

USA . 3,028 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 2,439 parts In-Stock

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$0.021

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Semicontronic

India . 166,057 parts In-Stock

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$0.020

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$0.020

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166,057

$0.021

$0.020

$0.020

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Ampacity Inc.

Singapore . 166,090 parts In-Stock

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$0.022

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Corohmni

South Africa . 353 parts In-Stock

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$0.023

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353

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Argo Parts USA

USA . 324 parts In-Stock

1+ parts

$0.055

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324

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Modulus Dynamics

Lithuania . 550 parts In-Stock

1+ parts

$0.061

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$0.060

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$0.059

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550

$0.061

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$0.059

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Continental Prestige Electronics

USA . 7,342 parts In-Stock

1+ parts

$0.244

100+ parts

$0.106

1k+ parts

$0.047

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7,342

$0.244

$0.106

$0.047

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Advanced Electronics

New Zealand . 60 parts In-Stock

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$0.922

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$0.839

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$0.756

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60

$0.922

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Aztec Data Supply Inc.

USA . 276 parts In-Stock

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$1.250

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276

$1.250

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RC Electronics

USA . 137,225 parts In-Stock

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Perfect Parts

USA . 89,488 parts In-Stock

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Eastek

USA . 20,000 parts In-Stock

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$0.071

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$0.071

Infinite Electronics LLP (Excess)

. 19,410 parts In-Stock

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Lixinc

USA . 6,820 parts In-Stock

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SupplyDigital Components

Austria . 5,842 parts In-Stock

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Problanco Electronics

Mexico . 4,381 parts In-Stock

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Kulean Microsystems

USA . 2,913 parts In-Stock

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TANS Electronics

Latvia . 1,637 parts In-Stock

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UHIMA Technologies

Türkiye . 738 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.236

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$0.229

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$0.224

100

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$0.224

Robosynatics

Brazil . 100 parts In-Stock

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$0.572

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$0.572

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$0.572

100

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$0.572

$0.572

Lucentia Tech

USA . 100 parts In-Stock

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$0.572

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100

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$0.572

Overview

Enhance your electronic projects with the high-quality SMMBT2907ALT3G PNP transistor by Onsemi. This small signal bipolar junction transistor offers exceptional performance and reliability, making it ideal for a wide range of applications in electronics. From amplifiers to signal processing circuits, this transistor delivers value and efficiency with its maximum collector-emitter voltage of 60V and fast turn-on/off times. Trust Onsemi's reputation for superior manufacturing and choose the SMMBT2907ALT3G for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material for the package body makes the transistor lightweight and ensures easy handling during assembly and installation.

Polarity or Channel Type: PNP

The PNP polarity allows for different circuit configurations and compatibility with other PNP transistors, providing flexibility in design.

Configuration: SINGLE

The single configuration simplifies the circuit design and reduces the chances of errors during implementation.

Surface Mount: YES

Being surface mountable allows for easier and more efficient PCB layout, saving space and improving overall system integration.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a standardized form factor, making it compatible with various mounting options.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3W, the transistor can handle moderate power levels without overheating, ensuring reliable performance.

Minimum DC Current Gain (hFE): 100

The high minimum DC current gain of 100 ensures consistent and stable amplification of signals in various circuits.

Maximum Operating Temperature: 150 °C

Supporting high operating temperatures up to 150°C, this transistor is suitable for applications where temperature fluctuations are common.

Maximum Collector-Emitter Voltage: 60 V

The 60V maximum collector-emitter voltage allows for safe operation in applications where higher voltages are present.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high reliability, low leakage currents, and improved thermal performance.

Maximum Turn On Time (ton): 45 ns

The fast turn-on time of 45ns enables quick switching transitions, making this transistor suitable for high-speed applications.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor can handle moderate current loads, making it versatile for various circuit designs.

Maximum Turn Off Time (toff): 100 ns

The low turn-off time of 100ns ensures efficient switching performance and minimizes switching losses in the circuit.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides good solderability, ensuring secure connections and reliable performance during operation.

Terminal Position: DUAL

The dual terminal position allows for easy and secure mounting on the PCB, ensuring proper alignment and electrical connections.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30s at peak reflow temperature, this transistor can withstand reflow soldering processes without damage.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures reliable solder joints and proper bonding during the assembly process.

Reference Standard: AEC-Q101

Compliance with AEC-Q101 standards ensures that the transistor meets stringent automotive requirements for reliability and performance.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency of 200MHz allows for high-frequency signal amplification and processing in various electronic circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMBT2907ALT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

100 ns

Maximum Turn On Time (ton):

45 ns

Trade Compliance

SMMBT2907ALT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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