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SMMBTA42LT3G

Onsemi

SMMBTA42LT3G by Onsemi

SMMBTA42LT3G by Onsemi is a NPN BJT with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and high hFE of 40. Its compact package with GULL WING terminals makes it suitable for surface mount designs.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

1+ parts

$0.090

100+ parts

$0.085

1k+ parts

$0.085

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100

$0.090

$0.085

$0.085

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DigiKey

USA . 1,878 parts In-Stock

1+ parts

$0.380

100+ parts

$0.147

1k+ parts

$0.097

10k+ parts

$0.075

1,878

$0.380

$0.147

$0.097

$0.075

Arrow

USA . 44 parts In-Stock

1+ parts

$0.385

100+ parts

$0.128

1k+ parts

-

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44

$0.385

$0.128

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Mouser Electronics

USA . 6,090 parts In-Stock

1+ parts

$0.450

100+ parts

$0.189

1k+ parts

$0.108

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6,090

$0.450

$0.189

$0.108

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Flip Electronics (Authorized)

USA . 252,000 parts In-Stock

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Verical

USA . 20,000 parts In-Stock

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$0.129

10k+ parts

$0.081

20,000

-

-

$0.129

$0.081

Master Electronics

USA . 20,000 parts In-Stock

1+ parts

-

100+ parts

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$0.110

10k+ parts

$0.069

20,000

-

-

$0.110

$0.069

Rochester

USA . 9,354 parts In-Stock

1+ parts

-

100+ parts

$0.065

1k+ parts

$0.054

10k+ parts

$0.048

9,354

-

$0.065

$0.054

$0.048

Chip1Stop

Japan . 44 parts In-Stock

1+ parts

-

100+ parts

$0.090

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44

-

$0.090

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Distributors (In-Stock)

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Digiode

USA . 1,248 parts In-Stock

1+ parts

$0.050

100+ parts

-

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1,248

$0.050

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Bristol Electronics

USA . 9,150 parts In-Stock

1+ parts

$0.263

100+ parts

$0.131

1k+ parts

$0.052

10k+ parts

$0.033

9,150

$0.263

$0.131

$0.052

$0.033

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.268

100+ parts

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50

$0.268

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Vyrian

USA . 331,459 parts In-Stock

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331,459

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Flip Electronics

USA . 244,205 parts In-Stock

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Chip Stock

USA . 97,960 parts In-Stock

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NAC Semi

USA . 20,000 parts In-Stock

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$0.114

20,000

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$0.114

IBS Electronics

USA . 20,000 parts In-Stock

1+ parts

-

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$0.133

10k+ parts

$0.090

20,000

-

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$0.133

$0.090

Sensible Micro Corp

USA . 6,586 parts In-Stock

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6,586

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Cyclops Electronics Ltd

UK . 5,735 parts In-Stock

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Velocity Electronics

USA . 2,000 parts In-Stock

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2,000

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Distributors (Availability)

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Ampacity Inc.

Singapore . 331,283 parts In-Stock

1+ parts

$0.045

100+ parts

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331,283

$0.045

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Semicontronic

India . 331,167 parts In-Stock

1+ parts

$0.045

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$0.044

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$0.044

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331,167

$0.045

$0.044

$0.044

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Corphita

USA . 2,147 parts In-Stock

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$0.048

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2,147

$0.048

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Corohmni

South Africa . 421 parts In-Stock

1+ parts

$0.053

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421

$0.053

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Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$0.090

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$0.085

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$0.085

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100

$0.090

$0.085

$0.085

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Continental Prestige Electronics

USA . 4,363 parts In-Stock

1+ parts

$0.105

100+ parts

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$0.103

4,363

$0.105

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$0.103

Argo Parts USA

USA . 530 parts In-Stock

1+ parts

$0.105

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$0.102

530

$0.105

-

-

$0.102

Modulus Dynamics

Lithuania . 35 parts In-Stock

1+ parts

$0.117

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$0.116

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$0.112

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35

$0.117

$0.116

$0.112

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Aztec Data Supply Inc.

USA . 126 parts In-Stock

1+ parts

$0.969

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126

$0.969

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Perfect Parts

USA . 123,200 parts In-Stock

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Infinite Electronics LLP (Excess)

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SupplyDigital Components

Austria . 8,045 parts In-Stock

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TANS Electronics

Latvia . 5,095 parts In-Stock

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Kulean Microsystems

USA . 4,875 parts In-Stock

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iodParts Technologies Inc.

India . 4,720 parts In-Stock

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Lixinc

USA . 3,393 parts In-Stock

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Problanco Electronics

Mexico . 1,053 parts In-Stock

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1,053

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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$0.262

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$0.254

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$0.249

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$0.262

$0.254

$0.249

UHIMA Technologies

Türkiye . 746 parts In-Stock

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746

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Robosynatics

Brazil . 30 parts In-Stock

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30

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Lucentia Tech

USA . 30 parts In-Stock

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30

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Overview

Unlock the power of small signal bipolar junction transistors with the SMMBTA42LT3G by Onsemi. Manufactured with the highest quality standards, this NPN transistor offers a versatile solution for a wide range of applications. From amplifiers to voltage regulators, this product delivers exceptional performance and reliability. Experience the benefits of its compact design, high power dissipation capability, and superior collector-emitter voltage. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes this transistor lightweight and durable, ideal for applications where weight and space are limited.

Polarity or Channel Type: NPN

With NPN polarity, this transistor allows for easy integration into NPN-based circuits, providing compatibility with a wide range of electronic systems.

Configuration: SINGLE

The single configuration simplifies circuit design and assembly, making it easier to use this transistor in various applications.

Surface Mount: YES

The surface mount capability enables easy and efficient PCB assembly, saving time and effort during production.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on the PCB, maximizing use of available board space.

Terminal Form: GULL WING

The gull wing terminal form enhances solder joint reliability, contributing to the overall durability and longevity of the transistor.

No. of Terminals: 3

With 3 terminals, this transistor offers straightforward connections and ease of use in circuit design.

Maximum Power Dissipation (Abs): 0.3 W

The high maximum power dissipation rating of 0.3W ensures reliable performance and thermal stability, even under demanding conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 40

With a minimum DC current gain of 40, this transistor delivers consistent and stable amplification in various circuit applications.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows for reliable performance in challenging environments and industrial applications.

Maximum Collector-Emitter Voltage: 300 V

The high maximum collector-emitter voltage rating of 300V provides versatility for use in a wide range of voltage applications.

Transistor Element Material: SILICON

The use of silicon as the transistor element material ensures high performance, reliability, and efficiency in electronic circuits.

Maximum Collector Current (IC): 0.5 A

The high maximum collector current rating of 0.5A allows for handling of moderate current loads in various circuit designs.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides excellent solderability and corrosion resistance, ensuring a reliable connection in the circuit.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for easy connection to external components.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor is easy to solder and integrate into the production process.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and reliable connections during assembly.

Reference Standard: AEC-Q101

Compliant with AEC-Q101 automotive industry standards, this transistor meets high-quality and reliability requirements for automotive applications.

Nominal Transition Frequency (fT): 50 MHz

With a nominal transition frequency of 50MHz, this transistor is suitable for high-speed switching applications and efficient signal amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMBTA42LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SMMBTA42LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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