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SMMBT3904TT1G

Onsemi

SMMBT3904TT1G by Onsemi

SMMBT3904TT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 40V, max operating temp of 150°C, and min DC current gain of 30. With a package style of small outline and surface mount capability, it offers a transition frequency of 300MHz.

Median Price

$0.127

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 3,039 parts In-Stock

1+ parts

$0.402

100+ parts

$0.155

1k+ parts

$0.102

10k+ parts

-

3,039

$0.402

$0.155

$0.102

-

Mouser Electronics

USA . 4,538 parts In-Stock

1+ parts

$0.410

100+ parts

$0.159

1k+ parts

$0.105

10k+ parts

-

4,538

$0.410

$0.159

$0.105

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DigiKey

USA . 22,476 parts In-Stock

1+ parts

-

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-

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-

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$0.075

22,476

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-

-

$0.075

Rochester

USA . 13,980 parts In-Stock

1+ parts

-

100+ parts

$0.072

1k+ parts

$0.060

10k+ parts

$0.053

13,980

-

$0.072

$0.060

$0.053

Verical

USA . 12,000 parts In-Stock

1+ parts

-

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$0.067

12,000

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-

$0.067

Farnell

UK . 3,375 parts In-Stock

1+ parts

-

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$0.127

1k+ parts

$0.084

10k+ parts

$0.070

3,375

-

$0.127

$0.084

$0.070

Element14

Singapore . 3,375 parts In-Stock

1+ parts

-

100+ parts

$0.208

1k+ parts

$0.115

10k+ parts

$0.090

3,375

-

$0.208

$0.115

$0.090

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 111 parts In-Stock

1+ parts

$0.056

100+ parts

-

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111

$0.056

-

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$0.104

100+ parts

-

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500

$0.104

-

-

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TME

Poland . 1,432 parts In-Stock

1+ parts

$0.390

100+ parts

$0.145

1k+ parts

$0.094

10k+ parts

$0.072

1,432

$0.390

$0.145

$0.094

$0.072

IBS Electronics

USA . 175,158 parts In-Stock

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-

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$0.139

175,158

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$0.139

NAC Semi

USA . 132,000 parts In-Stock

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$0.148

132,000

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$0.148

Chip Stock

USA . 55,000 parts In-Stock

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55,000

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J2 Sourcing AB

Sweden . 36,000 parts In-Stock

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36,000

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Flip Electronics

USA . 24,000 parts In-Stock

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NexGen Digital

USA . 11,920 parts In-Stock

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11,920

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Vyrian

USA . 9,584 parts In-Stock

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9,584

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Netsource Technology, Inc.

USA . 3,500 parts In-Stock

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3,500

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Velocity Electronics

USA . 618 parts In-Stock

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618

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Prism Electronics

USA . 87 parts In-Stock

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87

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 11,296 parts In-Stock

1+ parts

$0.050

100+ parts

$0.049

1k+ parts

$0.048

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11,296

$0.050

$0.049

$0.048

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Ampacity Inc.

Singapore . 9,450 parts In-Stock

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$0.050

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9,450

$0.050

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Corphita

USA . 1,570 parts In-Stock

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$0.053

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1,570

$0.053

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Corohmni

South Africa . 296 parts In-Stock

1+ parts

$0.059

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296

$0.059

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Argo Parts USA

USA . 2,210 parts In-Stock

1+ parts

$0.104

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$0.101

2,210

$0.104

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-

$0.101

Modulus Dynamics

Lithuania . 24 parts In-Stock

1+ parts

$0.115

100+ parts

$0.114

1k+ parts

$0.111

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24

$0.115

$0.114

$0.111

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Component Stockers USA

USA . 139,555 parts In-Stock

1+ parts

$0.450

100+ parts

$0.130

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$0.100

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$0.050

139,555

$0.450

$0.130

$0.100

$0.050

Advanced Electronics

New Zealand . 60 parts In-Stock

1+ parts

$1.404

100+ parts

$1.334

1k+ parts

$1.334

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60

$1.404

$1.334

$1.334

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Aztec Data Supply Inc.

USA . 138 parts In-Stock

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$1.671

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138

$1.671

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RC Electronics

USA . 39,000 parts In-Stock

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$0.040

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$0.040

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$0.040

39,000

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$0.040

$0.040

$0.040

Lixinc

USA . 13,023 parts In-Stock

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Authorized Procurement Solutions

USA . 7,500 parts In-Stock

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Eastek

USA . 6,000 parts In-Stock

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Continental Prestige Electronics

USA . 4,550 parts In-Stock

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$0.098

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$0.076

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$0.051

4,550

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$0.098

$0.076

$0.051

SupplyDigital Components

Austria . 4,169 parts In-Stock

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4,169

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Kulean Microsystems

USA . 2,878 parts In-Stock

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Problanco Electronics

Mexico . 1,827 parts In-Stock

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TANS Electronics

Latvia . 1,120 parts In-Stock

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UHIMA Technologies

Türkiye . 890 parts In-Stock

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Formix International (Excess)

India . 90 parts In-Stock

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Overview

Enhance your electronic projects with the SMMBT3904TT1G by Onsemi, a high-quality NPN transistor that promises reliable performance and durability. Manufactured by industry leader Onsemi, this small signal bipolar junction transistor (BJT) is perfect for amplifier applications, offering a maximum collector-emitter voltage of 40V and a nominal transition frequency of 300 MHz. With its surface mount capability and compact package style, this transistor is versatile and easy to incorporate into various designs. Trust Onsemi for top-notch components that deliver exceptional value and efficiency in every project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for small electronic devices.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this transistor suitable for amplifier applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high temperature environments, ensuring reliable performance.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, this transistor is optimized for signal amplification and audio processing.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C allows for efficient soldering during manufacturing processes, ensuring secure connections.

Nominal Transition Frequency (fT): 300 MHz

With a high nominal transition frequency of 300 MHz, this transistor is capable of handling high-frequency signals, making it suitable for many applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMBT3904TT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

SMMBT3904TT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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