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SMMBT5401LT1G

Onsemi

SMMBT5401LT1G by Onsemi

SMMBT5401LT1G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 0.3W, and max. collector-emitter voltage of 150V. Ideal for small outline packages, it operates at up to 150°C and has a nominal transition frequency of 100MHz, making it suitable for high-speed applications in automotive electronics.

Median Price

$0.136

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 29,116 parts In-Stock

1+ parts

$0.082

100+ parts

$0.030

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$0.019

10k+ parts

$0.014

29,116

$0.082

$0.030

$0.019

$0.014

Newark

USA . 15,522 parts In-Stock

1+ parts

$0.187

100+ parts

$0.078

1k+ parts

$0.052

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-

15,522

$0.187

$0.078

$0.052

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DigiKey

USA . 31,425 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.048

10k+ parts

-

31,425

$0.200

$0.076

$0.048

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Mouser Electronics

USA . 24,142 parts In-Stock

1+ parts

$0.200

100+ parts

$0.076

1k+ parts

$0.048

10k+ parts

$0.037

24,142

$0.200

$0.076

$0.048

$0.037

Farnell

UK . 4,328 parts In-Stock

1+ parts

$0.375

100+ parts

$0.091

1k+ parts

$0.066

10k+ parts

$0.044

4,328

$0.375

$0.091

$0.066

$0.044

Rochester

USA . 243,000 parts In-Stock

1+ parts

-

100+ parts

$0.026

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$0.022

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$0.019

243,000

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$0.026

$0.022

$0.019

Verical

USA . 168,000 parts In-Stock

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Element14

Singapore . 17,237 parts In-Stock

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$0.085

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$0.073

17,237

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$0.085

$0.073

Chip1Stop

Japan . 364 parts In-Stock

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$0.074

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$0.068

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364

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$0.074

$0.068

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Distributors (In-Stock)

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Digiode

USA . 121 parts In-Stock

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$0.049

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121

$0.049

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Nova Conductors

Japan . 870 parts In-Stock

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$0.091

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870

$0.091

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Maritex

Poland . 7,370 parts In-Stock

1+ parts

$0.252

100+ parts

$0.060

1k+ parts

$0.038

10k+ parts

$0.035

7,370

$0.252

$0.060

$0.038

$0.035

ComSIT Distribution GmbH

Germany . 238,705 parts In-Stock

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ComSIT USA

USA . 238,705 parts In-Stock

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Flip Electronics

USA . 129,000 parts In-Stock

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Chip Stock

USA . 96,500 parts In-Stock

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IBS Electronics

USA . 48,000 parts In-Stock

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$0.043

48,000

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$0.043

Vyrian

USA . 44,928 parts In-Stock

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NAC Semi

USA . 24,000 parts In-Stock

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24,000

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$0.076

Sensible Micro Corp

USA . 5,577 parts In-Stock

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Bristol Electronics

USA . 1,439 parts In-Stock

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Microfarads

USA . 789 parts In-Stock

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Contempo Components LLC

USA . 170 parts In-Stock

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Cyclops Electronics Ltd

UK . 165 parts In-Stock

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 66,376 parts In-Stock

1+ parts

$0.033

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66,376

$0.033

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Corohmni

South Africa . 385 parts In-Stock

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$0.036

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385

$0.036

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Semicontronic

India . 65,917 parts In-Stock

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$0.040

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$0.039

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$0.039

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65,917

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$0.039

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Corphita

USA . 1,007 parts In-Stock

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$0.047

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Argo Parts USA

USA . 3,019 parts In-Stock

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$0.088

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$0.085

3,019

$0.088

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$0.085

Continental Prestige Electronics

USA . 29,170 parts In-Stock

1+ parts

$0.278

100+ parts

$0.118

1k+ parts

$0.060

10k+ parts

$0.057

29,170

$0.278

$0.118

$0.060

$0.057

Component Stockers USA

USA . 20,240 parts In-Stock

1+ parts

$0.370

100+ parts

$0.100

1k+ parts

$0.080

10k+ parts

$0.040

20,240

$0.370

$0.100

$0.080

$0.040

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.569

100+ parts

$0.540

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$0.540

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150

$0.569

$0.540

$0.540

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Aztec Data Supply Inc.

USA . 4,147 parts In-Stock

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$0.776

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$0.776

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Perfect Parts

USA . 538,870 parts In-Stock

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GreenTree Electronics

Israel . 306,000 parts In-Stock

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RC Electronics

USA . 139,022 parts In-Stock

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$0.090

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$0.080

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$0.080

139,022

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$0.080

Eastek

USA . 39,000 parts In-Stock

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Kepictronics

USA . 28,358 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Glotronic Ltd.

UK . 16,800 parts In-Stock

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Lixinc

USA . 10,137 parts In-Stock

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Problanco Electronics

Mexico . 3,111 parts In-Stock

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iBuyXS LLC

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Robosynatics

Brazil . 1,500 parts In-Stock

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$3.443

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$3.443

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$3.443

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$3.443

$3.443

$3.443

Lucentia Tech

USA . 1,500 parts In-Stock

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$3.443

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$3.443

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$3.443

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$3.443

$3.443

SupplyDigital Components

Austria . 1,168 parts In-Stock

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TANS Electronics

Latvia . 565 parts In-Stock

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Kulean Microsystems

USA . 557 parts In-Stock

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UHIMA Technologies

Türkiye . 180 parts In-Stock

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Modulus Dynamics

Lithuania . 44 parts In-Stock

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Overview

Enhance your electronic designs with the SMMBT5401LT1G by Onsemi, a top-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this PNP transistor offers reliable performance and durability. Ideal for a wide range of applications, this single-configured transistor is perfect for amplification, switching, and signal processing tasks. With a high DC current gain and low power dissipation, this transistor provides exceptional value and efficiency for your projects. Trust Onsemi for superior quality and performance in your electronic designs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers good durability and heat resistance, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used for high-side switching and amplification, making this transistor versatile in circuit design.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance.

Maximum Collector-Emitter Voltage: 150 V

The high maximum voltage rating allows the transistor to be used in a wide range of voltage applications, providing flexibility in design.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency indicates fast switching speeds, making this transistor suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SMMBT5401LT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SMMBT5401LT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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