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BC856BW,115

NXP Semiconductors

BC856BW,115 by NXP Semiconductors

BC856BW,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min hFE of 220. With a max operating temperature of 150°C, it is suitable for small outline packages in surface mount configurations.

Median Price

$0.038

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Adafruit Industries

USA . 100 parts In-Stock

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$0.039

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100

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Chip1Stop

Japan . 10,210 parts In-Stock

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$0.274

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EBV Elektronik

Germany . 1,413,000 parts In-Stock

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Arrow

USA . 102,000 parts In-Stock

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TTI

USA . 99,000 parts In-Stock

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Farnell

UK . 82,265 parts In-Stock

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Future Electronics

Canada . 60,000 parts In-Stock

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Verical

USA . 7,198 parts In-Stock

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RS (Exports)

UK . 2,650 parts In-Stock

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$0.866

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$0.362

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$0.355

2,650

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$0.866

$0.362

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Rochester

USA . 869 parts In-Stock

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869

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Element14

Singapore . 409 parts In-Stock

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$0.121

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409

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Distributors (In-Stock)

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Digiode

USA . 3,926 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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900

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TME

Poland . 1,740 parts In-Stock

1+ parts

$0.110

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$0.044

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$0.029

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$0.020

1,740

$0.110

$0.044

$0.029

$0.020

Bristol Electronics

USA . 5,968 parts In-Stock

1+ parts

$0.113

100+ parts

$0.056

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$0.022

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$0.017

5,968

$0.113

$0.056

$0.022

$0.017

Ozdisan Elektronik

Türkiye . 2,190 parts In-Stock

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$57.007

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IBS Electronics

USA . 2,301,000 parts In-Stock

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NAC Semi

USA . 1,536,000 parts In-Stock

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Vyrian

USA . 171,036 parts In-Stock

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Chip Stock

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J2 Sourcing AB

Sweden . 26,475 parts In-Stock

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Sensible Micro Corp

USA . 15,442 parts In-Stock

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VNN

France . 3,295 parts In-Stock

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LIBRA Elektronik GmbH

Germany . 2,977 parts In-Stock

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PC Components Company LLC

USA . 2,800 parts In-Stock

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Cogito LLC

Ukraine . 2,765 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,165 parts In-Stock

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Anansix

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A&K Electronics

USA . 749 parts In-Stock

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Rotakorn

Sweden . 749 parts In-Stock

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Semtec, LLC

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Distributors (Availability)

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Ampacity Inc.

Singapore . 156,676 parts In-Stock

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$0.009

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Semicontronic

India . 150,986 parts In-Stock

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Corphita

USA . 785 parts In-Stock

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785

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Argo Parts USA

USA . 4,050 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.036

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100

$0.038

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Corohmni

South Africa . 473 parts In-Stock

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473

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Advanced Electronics

New Zealand . 100 parts In-Stock

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AZTECH Wire

Italy . 4,538 parts In-Stock

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$0.040

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Modulus Dynamics

Lithuania . 95 parts In-Stock

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Continental Prestige Electronics

USA . 35,935 parts In-Stock

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$0.162

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$0.076

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Aztec Data Supply Inc.

USA . 3,058 parts In-Stock

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$1.393

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Eastek

USA . 408,000 parts In-Stock

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GreenTree Electronics

Israel . 147,000 parts In-Stock

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Glotronic Ltd.

UK . 103,200 parts In-Stock

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Perfect Parts

USA . 79,430 parts In-Stock

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iBuyXS LLC

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Allen Electronics Distributors

USA . 37,800 parts In-Stock

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$0.028

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CPlus Electronics

USA . 24,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 22,400 parts In-Stock

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Robosynatics

Brazil . 12,072 parts In-Stock

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Lucentia Tech

USA . 12,072 parts In-Stock

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Infinite Electronics LLP (Excess)

. 10,095 parts In-Stock

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UNI Independent Distributors

Spain . 7,846 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 3,500 parts In-Stock

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Supply Digital

USA . 1,550 parts In-Stock

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Overview

Discover the BC856BW,115 by NXP Semiconductors, a top-quality PNP Small Signal Bipolar Junction Transistor (BJT) designed for switching applications. With a maximum VCEsat of 0.65V and a nominal transition frequency of 100MHz, this transistor offers high performance in a compact package. Ideal for a wide range of electronic projects, this transistor provides reliability and efficiency. Trust NXP Semiconductors for innovative solutions that meet your needs. Upgrade your designs with the BC856BW,115 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection to the transistor, making it suitable for various applications and environments.

Polarity or Channel Type: PNP

PNP transistors are commonly used in high-speed switching circuits and can handle relatively high power levels, making them versatile for different applications.

Configuration: SINGLE

Single configuration transistors are easier to integrate into circuits and require less space, making them efficient for compact designs.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can rapidly change between on and off states, making it ideal for digital and analog circuits.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and space in electronic designs.

Maximum VCEsat: 0.65 V

Low VCEsat ensures minimal power loss and efficient operation, making this transistor suitable for energy-efficient applications.

Package Shape: RECTANGULAR

Rectangular shape enables easy handling and placement during assembly, enhancing usability and compatibility with standard PCB layouts.

No. of Terminals: 3

Having 3 terminals simplifies circuit connections and reduces complexity, making the transistor easy to use for various applications.

Maximum Power Dissipation (Abs): 0.2 W

With a high power dissipation rating, this transistor can handle relatively high power levels without overheating, ensuring reliable performance.

Package Style (Meter): SMALL OUTLINE

Small outline design saves space on the PCB and allows for denser circuit layouts, ideal for compact electronic devices and applications.

Minimum DC Current Gain (hFE): 220

High DC current gain ensures amplification of input signals with high efficiency, making this transistor suitable for signal amplification tasks.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable operation in various environments, ensuring stability and performance under different conditions.

Maximum Collector-Base Capacitance: 5 pF

Low capacitance minimizes signal distortion and interference, making this transistor suitable for high-frequency applications where signal integrity is crucial.

Maximum Collector-Emitter Voltage: 65 V

High collector-emitter voltage rating provides flexibility for various voltage requirements, making this transistor suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability, stability, and performance, making them a popular choice for a wide range of electronic applications.

Maximum Collector Current (IC): 0.1 A

Suitable for low to moderate current levels, this transistor can handle up to 0.1A of collector current, making it versatile for different circuit designs.

Terminal Finish: TIN

Tin terminal finish provides good solderability and conductivity, ensuring secure and reliable connections during assembly.

Terminal Position: DUAL

Dual terminal position allows for flexibility in circuit connections and layout, making this transistor easy to integrate into different circuit designs.

Maximum Time At Peak Reflow Temperature (s): 30

Optimal reflow time ensures proper soldering and assembly, leading to reliable connections and overall performance in electronic circuits.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance enables thermal stability during soldering and assembly processes, ensuring robust connections and reliability in operation.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and signal processing, making this transistor suitable for high-speed applications and circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC856BW,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

220

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC856BW,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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