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BC857B,215

NXP Semiconductors

BC857B,215 by NXP Semiconductors

BC857B,215 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min hFE of 220. With a max collector-emitter voltage of 45V, it operates at temperatures up to 150°C.

Median Price

$0.015

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1k+

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Newark

USA . 5 parts In-Stock

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$0.241

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EBV Elektronik

Germany . 14,730,000 parts In-Stock

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Rochester

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Verical

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TTI

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Elektronika Sales Private Limited

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Element14

Singapore . 10 parts In-Stock

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Ozdisan Elektronik

Türkiye . 943,574 parts In-Stock

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Digiode

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Nova Conductors

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Maritex

Poland . 77 parts In-Stock

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TME

Poland . 8,924 parts In-Stock

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Bristol Electronics

USA . 7,552 parts In-Stock

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NAC Semi

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Rebound Electronics

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LIBRA Elektronik GmbH

Germany . 41,779 parts In-Stock

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Right Parts Inc.

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Inventory MP

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India . 6,857,529 parts In-Stock

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Ampacity Inc.

Singapore . 1,638,742 parts In-Stock

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AZTECH Wire

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Argo Parts USA

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Modulus Dynamics

Lithuania . 5,611 parts In-Stock

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Advanced Electronics

New Zealand . 80 parts In-Stock

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Aztec Data Supply Inc.

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Perfect Parts

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GreenTree Electronics

Israel . 8,253,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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Continental Prestige Electronics

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Authorized Procurement Solutions

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Epart123

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iodParts Technologies Inc.

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Kepictronics

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Lucentia Tech

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Component Connect

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Brazil . 8,078 parts In-Stock

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Overview

Enhance your electronic projects with the BC857B,215 by NXP Semiconductors, a high-quality Small Signal Bipolar Junction Transistor. Perfect for switching applications, this PNP transistor offers a low maximum VCEsat of 0.65V and a maximum operating temperature of 150°C. With a minimum DC current gain of 220 and a maximum collector current of 0.1A, this transistor provides reliable performance in a compact package. Trust NXP Semiconductors for cutting-edge technology and top-notch products that deliver exceptional value to customers across various industries.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Allows for easy integration into PNP circuit designs, expanding the versatility of the transistor.

Configuration: SINGLE

Simplifies circuit design and integration, making it user-friendly for both beginners and experienced engineers.

Transistor Application: SWITCHING

Ideal for switching applications due to its fast response time and low VCEsat, ensuring efficient performance.

Surface Mount: YES

Enables easy and secure mounting onto circuit boards, saving space and allowing for automated assembly processes.

Maximum VCEsat: 0.65 V

Low VCEsat minimizes power loss and heat dissipation, improving overall efficiency of the transistor.

Package Shape: RECTANGULAR

Fits easily into standard circuit layouts and designs, making it convenient for integration.

Terminal Form: GULL WING

Provides strong and reliable connections, reducing the risk of signal loss or malfunction.

No. of Terminals: 3

Simplifies connection to external components, enhancing usability and flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.3 W

Handles power efficiently, ensuring stable operation and reliability in various applications.

Package Style (Meter): SMALL OUTLINE

Compact size saves space on circuit boards, making it suitable for designs with limited space constraints.

Minimum DC Current Gain (hFE): 220

High minimum hFE ensures consistent amplifier performance, making it reliable for signal amplification.

Maximum Operating Temperature: 150 °C

Wide operating temperature range allows for use in various environments without compromising performance.

Maximum Collector-Emitter Voltage: 45 V

Provides a high voltage rating for safe and reliable operation in a range of circuit designs.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, ensuring long-lasting operation of the transistor.

Maximum Collector Current (IC): 0.1 A

Handles moderate current levels, making it suitable for low to medium power applications.

Terminal Finish: TIN

Tin finish ensures good conductivity and corrosion resistance, improving the lifespan of the transistor.

Terminal Position: DUAL

Dual terminal position allows for flexible mounting orientations, simplifying circuit layout and design.

Maximum Time At Peak Reflow Temperature (s): 30

Withstands peak reflow temperatures for soldering processes, ensuring secure and reliable connections.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance allows for robust manufacturing processes without compromising quality.

Nominal Transition Frequency (fT): 100 MHz

High fT value indicates fast switching speeds, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857B,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

220

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC857B,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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