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2N3904TFR

Onsemi

2N3904TFR by Onsemi

2N3904TFR by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Operates in temp range -55 to 150°C, with turn on time of 70ns and turn off time of 250ns.

Median Price

$0.075

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

Distributors (Authorized)

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Adafruit Industries

USA . 350 parts In-Stock

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$0.076

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Farnell

UK . 7,136 parts In-Stock

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$0.047

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$0.047

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Mouser Electronics

USA . 91,319 parts In-Stock

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$0.220

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91,319

$0.220

$0.096

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$0.057

Arrow

USA . 5,702 parts In-Stock

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$0.299

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$0.074

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$0.054

5,702

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$0.113

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DigiKey

USA . 4,541 parts In-Stock

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Master Electronics

USA . 34,000 parts In-Stock

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Chip1Stop

Japan . 32,524 parts In-Stock

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Future Electronics

Canada . 32,000 parts In-Stock

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RS (Exports)

UK . 16,600 parts In-Stock

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Element14

Singapore . 11,820 parts In-Stock

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Verical

USA . 5,702 parts In-Stock

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Newark

USA . 2,000 parts In-Stock

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Voyager Components

USA . 17 parts In-Stock

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Digiode

USA . 2,580 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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TME

Poland . 1,158 parts In-Stock

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$0.056

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DF Sales Co.

USA . 710 parts In-Stock

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DF Sales Co.

USA . 710 parts In-Stock

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Component Electronics Inc.

Canada . 4,220 parts In-Stock

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$0.770

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$0.580

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IBS Electronics

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Chip Stock

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Vyrian

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NAC Semi

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Sensible Micro Corp

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Prism Electronics

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SPM Sales

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Lantek

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LWI Electronics Inc

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Connector Distribution Corp

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Right Parts Inc.

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Elcom Components

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Resion

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Bristol Electronics

USA . 963 parts In-Stock

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Atlantic Semiconductor

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Cyclops Electronics Ltd

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VNN

France . 389 parts In-Stock

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Bisco

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Mil-Aero Solutions, Inc.

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Corohmni

South Africa . 337 parts In-Stock

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Semicontronic

India . 38,372 parts In-Stock

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Corphita

USA . 1,281 parts In-Stock

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Modulus Dynamics

Lithuania . 7,974 parts In-Stock

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Argo Parts USA

USA . 2,498 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Continental Prestige Electronics

USA . 2,122 parts In-Stock

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Aztec Data Supply Inc.

USA . 3,245 parts In-Stock

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Perfect Parts

USA . 244,430 parts In-Stock

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Metaverse IC Inc.

Canada . 112,211 parts In-Stock

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Allen Electronics Distributors

USA . 22,800 parts In-Stock

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Kepictronics

USA . 18,000 parts In-Stock

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Robosynatics

Brazil . 17,718 parts In-Stock

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Lucentia Tech

USA . 17,718 parts In-Stock

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Lixinc

USA . 17,195 parts In-Stock

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GreenTree Electronics

Israel . 12,000 parts In-Stock

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SupplyDigital Components

Austria . 7,831 parts In-Stock

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Problanco Electronics

Mexico . 7,766 parts In-Stock

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TANS Electronics

Latvia . 6,496 parts In-Stock

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Eastek

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 3,267 parts In-Stock

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UHIMA Technologies

Türkiye . 564 parts In-Stock

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Supply Digital

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Overview

Unlock the potential of your electronic projects with the 2N3904TFR transistor from Onsemi. Manufactured by a trusted name in the industry, this NPN BJT offers reliability and performance for switching applications. With a maximum collector-emitter voltage of 40V and a transition frequency of 300MHz, this small signal transistor delivers power and efficiency. Whether you're a hobbyist or a professional, the 2N3904TFR provides value and benefits that will take your projects to the next level. Trust Onsemi for quality components that make a difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good protection and durability for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering versatility in circuit design.

Configuration: SINGLE

Simplified design with a single transistor makes it easy to use and integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Maximum Power Dissipation: 0.35 W

Capable of handling moderate power levels, suitable for a range of applications without overheating.

Maximum Operating Temperature: 150 °C

High operating temperature allows for use in environments with elevated temperatures or where heat dissipation is a concern.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications where higher voltage handling capability is required.

Minimum DC Current Gain (hFE): 30

Having a minimum gain of 30 ensures consistent and reliable amplification in circuits.

Nominal Transition Frequency (fT): 300 MHz

High transition frequency enables fast switching and response times in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N3904TFR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

30

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

250 ns

Maximum Turn On Time (ton):

70 ns

Trade Compliance

2N3904TFR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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