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BC847CDW1T1G

Onsemi

BC847CDW1T1G by Onsemi

BC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, hFE of 420. It operates up to 150°C, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications due to its small outline package and high transition frequency of 100MHz.

Median Price

$0.032

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 3,374 parts In-Stock

1+ parts

$0.167

100+ parts

$0.064

1k+ parts

$0.040

10k+ parts

$0.020

3,374

$0.167

$0.064

$0.040

$0.020

Newark

USA . 2,568 parts In-Stock

1+ parts

$0.185

100+ parts

$0.070

1k+ parts

$0.044

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2,568

$0.185

$0.070

$0.044

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Mouser Electronics

USA . 12,935 parts In-Stock

1+ parts

$0.190

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$0.073

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$0.047

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$0.034

12,935

$0.190

$0.073

$0.047

$0.034

Future Electronics

Canada . 7,083,000 parts In-Stock

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$0.026

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Avnet

USA . 162,000 parts In-Stock

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Verical

USA . 48,000 parts In-Stock

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$0.031

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Master Electronics

USA . 48,000 parts In-Stock

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Element14

Singapore . 11,258 parts In-Stock

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$0.099

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$0.062

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$0.061

11,258

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$0.099

$0.062

$0.061

Farnell

UK . 11,258 parts In-Stock

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$0.040

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$0.035

11,258

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Rochester

USA . 9,340 parts In-Stock

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$0.025

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$0.021

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$0.018

9,340

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$0.018

Chip1Stop

Japan . 7,747 parts In-Stock

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$0.022

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7,747

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$0.018

DigiKey

USA . 6,303 parts In-Stock

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6,303

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EBV Elektronik

Germany . 6,000 parts In-Stock

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6,000

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Digiode

USA . 1,559 parts In-Stock

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$0.024

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Nova Conductors

Japan . 500 parts In-Stock

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$0.060

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500

$0.060

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Maritex

Poland . 610 parts In-Stock

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$0.251

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$0.061

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$0.043

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$0.037

610

$0.251

$0.061

$0.043

$0.037

NAC Semi

USA . 5,697,000 parts In-Stock

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IBS Electronics

USA . 3,702,000 parts In-Stock

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Vyrian

USA . 139,553 parts In-Stock

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Chip Stock

USA . 64,835 parts In-Stock

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ComSIT Distribution GmbH

Germany . 15,000 parts In-Stock

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ComSIT USA

USA . 15,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 5,613 parts In-Stock

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VNN

France . 1,118 parts In-Stock

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Connector Distribution Corp

USA . 334 parts In-Stock

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334

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Right Parts Inc.

USA . 334 parts In-Stock

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334

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Distributors (Availability)

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Ampacity Inc.

Singapore . 132,200 parts In-Stock

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$0.016

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Semicontronic

India . 131,055 parts In-Stock

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131,055

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Corohmni

South Africa . 332 parts In-Stock

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332

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Corphita

USA . 691 parts In-Stock

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691

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Argo Parts USA

USA . 3,492 parts In-Stock

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$0.048

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3,492

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Netroflash

USA . 100 parts In-Stock

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$0.060

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100

$0.060

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Continental Prestige Electronics

USA . 27,088 parts In-Stock

1+ parts

$0.209

100+ parts

$0.086

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$0.036

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27,088

$0.209

$0.086

$0.036

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Aztec Data Supply Inc.

USA . 3,060 parts In-Stock

1+ parts

$0.609

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3,060

$0.609

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$1.003

100+ parts

$0.953

1k+ parts

$0.953

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500

$1.003

$0.953

$0.953

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Perfect Parts

USA . 1,259,628 parts In-Stock

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Eastek

USA . 759,000 parts In-Stock

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GreenTree Electronics

Israel . 327,000 parts In-Stock

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Authorized Procurement Solutions

USA . 252,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,611 parts In-Stock

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Lixinc

USA . 16,401 parts In-Stock

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Kepictronics

USA . 15,000 parts In-Stock

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Glotronic Ltd.

UK . 14,400 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,795 parts In-Stock

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TANS Electronics

Latvia . 6,607 parts In-Stock

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SupplyDigital Components

Austria . 6,543 parts In-Stock

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Kulean Microsystems

USA . 5,668 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,530 parts In-Stock

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ChipstoGo Electronic ltd

UK . 3,000 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 499 parts In-Stock

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499

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Problanco Electronics

Mexico . 106 parts In-Stock

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Modulus Dynamics

Lithuania . 87 parts In-Stock

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Overview

Enhance your amplifier designs with the BC847CDW1T1G by Onsemi, a high-quality NPN Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this transistor offers exceptional performance and reliability for a wide range of applications. With its compact package shape and surface mount capability, this transistor is ideal for maximizing space efficiency in your electronic projects. Trust in Onsemi's reputation for excellence and innovation, and experience the value and benefits that the BC847CDW1T1G brings to your designs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type:

NPN - NPN transistors are commonly used in amplification circuits, making this product ideal for amplifier applications.

Configuration:

SEPARATE, 2 ELEMENTS - The dual element configuration allows for better control and performance in amplifier circuits.

Transistor Application:

AMPLIFIER - Specifically designed for amplifier applications, ensuring optimal performance in amplification tasks.

Surface Mount:

YES - The surface mount capability allows for easy installation and space-saving on circuit boards.

Package Shape:

RECTANGULAR - The rectangular shape of the package provides versatility for installation in different electronic devices.

Terminal Form:

GULL WING - The gull wing terminals offer secure connections and ease of soldering during installation.

No. of Elements:

2 - With 2 elements, this transistor can handle complex amplification tasks efficiently.

No. of Terminals:

6 - The 6 terminals allow for multiple connections within a circuit, providing flexibility in circuit design.

Maximum Power Dissipation (Abs):

0.38 W - The high power dissipation capacity ensures the transistor can handle high-power amplification tasks reliably.

Package Style (Meter):

SMALL OUTLINE - The small outline package style saves space and is ideal for compact electronic devices.

Minimum DC Current Gain (hFE):

420 - The high minimum DC current gain ensures stable and consistent amplification performance.

Maximum Operating Temperature:

150 °C - With a high maximum operating temperature, this transistor can withstand extreme heat conditions.

Maximum Collector-Emitter Voltage:

45 V - The high maximum collector-emitter voltage ensures the transistor can handle high voltage applications effectively.

Transistor Element Material:

SILICON - Silicon transistors are known for their high performance and reliability in electronic circuits.

Minimum Operating Temperature:

55 °C - The low minimum operating temperature allows the transistor to function in a wide range of environmental conditions.

Maximum Collector Current (IC):

0.1 A - The high maximum collector current rating ensures the transistor can handle heavy current loads.

Terminal Finish:

MATTE TIN - The matte tin finish provides corrosion resistance and ensures long-lasting connectivity.

Terminal Position:

DUAL - The dual terminal position offers flexibility in circuit design and connection options.

Maximum Time At Peak Reflow Temperature (s):

30 - The short peak reflow time ensures quick and efficient soldering during installation.

Peak Reflow Temperature °C:

260 - The high peak reflow temperature allows for effective soldering without damaging the transistor.

Nominal Transition Frequency (fT):

100 MHz - The high nominal transition frequency ensures fast signal processing and response time in amplifier circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847CDW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC847CDW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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