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SBC846BPDW1T1G

Onsemi

SBC846BPDW1T1G by Onsemi

SBC846BPDW1T1G by Onsemi is a Small Signal BJT with NPN and PNP types. It has 2 elements, 6 terminals, and operates as an amplifier. With a max VCEsat of 0.65V, it can handle up to 0.1A IC at 65V VCE. Ideal for applications requiring high DC current gain and low power dissipation in a small outline package.

Median Price

$0.098

Lifecycle Status

Suppliers In-Stock

31

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 50 parts In-Stock

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$0.022

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$0.022

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$0.022

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50

$0.022

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$0.022

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Arrow

USA . 118 parts In-Stock

1+ parts

$0.258

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$0.064

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118

$0.258

$0.064

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DigiKey

USA . 26,507 parts In-Stock

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$0.290

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$0.110

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$0.072

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26,507

$0.290

$0.110

$0.072

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Mouser Electronics

USA . 57,322 parts In-Stock

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$0.340

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$0.149

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$0.082

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$0.072

57,322

$0.340

$0.149

$0.082

$0.072

Avnet

USA . 63,000 parts In-Stock

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Flip Electronics (Authorized)

USA . 12,000 parts In-Stock

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Element14

Singapore . 7,546 parts In-Stock

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$0.155

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$0.096

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7,546

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$0.095

Farnell

UK . 7,546 parts In-Stock

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$0.082

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$0.061

7,546

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Chip1Stop

Japan . 3,000 parts In-Stock

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$0.062

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$0.054

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$0.053

3,000

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$0.062

$0.054

$0.053

Verical

USA . 2,800 parts In-Stock

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$0.113

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$0.074

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$0.053

2,800

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$0.113

$0.074

$0.053

Rochester

USA . 378 parts In-Stock

1+ parts

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100+ parts

$0.044

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$0.037

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$0.033

378

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$0.044

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$0.033

Distributors (In-Stock)

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Digiode

USA . 2,223 parts In-Stock

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$0.034

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2,223

$0.034

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Nova Conductors

Japan . 1,000 parts In-Stock

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$0.111

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$0.111

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TME

Poland . 2,783 parts In-Stock

1+ parts

$0.220

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$0.101

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$0.071

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2,783

$0.220

$0.101

$0.071

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Ozdisan Elektronik

Türkiye . 979 parts In-Stock

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$0.663

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979

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NexGen Digital

USA . 159,000 parts In-Stock

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Rotakorn

Sweden . 123,748 parts In-Stock

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A&K Electronics

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Bristol Electronics

USA . 123,748 parts In-Stock

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Chip Stock

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NAC Semi

USA . 102,000 parts In-Stock

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Vyrian

USA . 23,177 parts In-Stock

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VRG Components

USA . 21,000 parts In-Stock

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Ack Elektronik San.Tic.Ltd.Sti

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Cyclops Electronics Ltd

UK . 6,054 parts In-Stock

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IBS Electronics

USA . 6,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 5,999 parts In-Stock

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Holdelec - ElecDif-Pro

France . 5,999 parts In-Stock

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Sensible Micro Corp

USA . 1,190 parts In-Stock

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ComSIT Distribution GmbH

Germany . 764 parts In-Stock

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764

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Distributors (Availability)

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Ampacity Inc.

Singapore . 23,269 parts In-Stock

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$0.029

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Semicontronic

India . 22,859 parts In-Stock

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22,859

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Corphita

USA . 1,750 parts In-Stock

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Corohmni

South Africa . 234 parts In-Stock

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Aranea Global

USA . 50 parts In-Stock

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$0.109

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$0.105

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$0.109

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Argo Parts USA

USA . 2,596 parts In-Stock

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$0.111

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$0.108

2,596

$0.111

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$0.108

Continental Prestige Electronics

USA . 30,997 parts In-Stock

1+ parts

$0.445

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$0.164

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$0.082

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30,997

$0.445

$0.164

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Aztec Data Supply Inc.

USA . 505 parts In-Stock

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$1.223

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$1.223

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Advanced Electronics

New Zealand . 5,000 parts In-Stock

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$2.028

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$1.927

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$1.927

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$2.028

$1.927

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GreenTree Electronics

Israel . 948,000 parts In-Stock

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Eastek

USA . 903,000 parts In-Stock

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Authorized Procurement Solutions

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Kepictronics

USA . 177,000 parts In-Stock

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Perfect Parts

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Infinite Electronics LLP (Excess)

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Component Connect

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QUARKTWIN TECHNOLOGY LTD

USA . 14,266 parts In-Stock

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TANS Electronics

Latvia . 6,789 parts In-Stock

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Kulean Microsystems

USA . 6,017 parts In-Stock

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Metaverse IC Inc.

Canada . 6,000 parts In-Stock

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Lixinc

USA . 3,644 parts In-Stock

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Formix International (Excess)

India . 3,000 parts In-Stock

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Problanco Electronics

Mexico . 1,326 parts In-Stock

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UHIMA Technologies

Türkiye . 685 parts In-Stock

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Futuretech Components

Singapore . 350 parts In-Stock

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SupplyDigital Components

Austria . 271 parts In-Stock

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Overview

Discover the power of the SBC846BPDW1T1G by Onsemi - a game-changer in the realm of Small Signal Bipolar Junction Transistors (BJT). With its NPN and PNP configurations, this amplifier transistor opens up a world of possibilities for your electronic projects. Designed with precision by Onsemi, this product guarantees top-notch quality and reliability. From its small outline package shape to its high DC current gain, the SBC846BPDW1T1G offers unmatched performance that will take your designs to the next level. Embrace innovation and choose the SBC846BPDW1T1G for all your amplification needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for flexibility in circuit design and application compatibility.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification circuits.

Maximum VCEsat: 0.65 V

Low VCEsat value indicates minimal saturation voltage, leading to efficient power usage and reduced heat dissipation.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures in various environments.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and high-frequency performance in amplification circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SBC846BPDW1T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

4.5 pF

Maximum Collector-Emitter Voltage:

65 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

SBC846BPDW1T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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