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SBC847BPDXV6T1G

Onsemi

SBC847BPDXV6T1G by Onsemi

SBC847BPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, suitable for amplifier applications. It features 2 elements in a rectangular package with 6 terminals, offering a min hFE of 200 and max VCE of 45V. With a power dissipation of 0.5W and operating temperature range from -55 to 150°C, it meets AEC-Q101 standards.

Median Price

$0.348

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 12,000 parts In-Stock

1+ parts

$0.500

100+ parts

$0.196

1k+ parts

$0.131

10k+ parts

$0.093

12,000

$0.500

$0.196

$0.131

$0.093

Mouser Electronics

USA . 291,688 parts In-Stock

1+ parts

$0.540

100+ parts

$0.212

1k+ parts

$0.142

10k+ parts

$0.099

291,688

$0.540

$0.212

$0.142

$0.099

DigiKey

USA . 95,139 parts In-Stock

1+ parts

$0.540

100+ parts

$0.212

1k+ parts

$0.142

10k+ parts

$0.128

95,139

$0.540

$0.212

$0.142

$0.128

Chip1Stop

Japan . 28,000 parts In-Stock

1+ parts

-

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-

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$0.086

28,000

-

-

-

$0.086

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

$0.196

1k+ parts

$0.131

10k+ parts

$0.093

12,000

-

$0.196

$0.131

$0.093

Rochester

USA . 470 parts In-Stock

1+ parts

-

100+ parts

$0.106

1k+ parts

$0.088

10k+ parts

$0.079

470

-

$0.106

$0.088

$0.079

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 248 parts In-Stock

1+ parts

$0.083

100+ parts

-

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248

$0.083

-

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Nova Conductors

Japan . 300 parts In-Stock

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$0.120

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300

$0.120

-

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Vyrian

USA . 87,294 parts In-Stock

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87,294

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Conversion2

USA . 85,082 parts In-Stock

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85,082

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Semtec, LLC

USA . 76,000 parts In-Stock

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76,000

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Chip Stock

USA . 53,000 parts In-Stock

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Flip Electronics

USA . 44,000 parts In-Stock

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44,000

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Sunrise Surplus Inc.

USA . 5,482 parts In-Stock

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5,482

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Sensible Micro Corp

USA . 459 parts In-Stock

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459

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Distributors (Availability)

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Semicontronic

India . 91,354 parts In-Stock

1+ parts

$0.065

100+ parts

$0.063

1k+ parts

$0.063

10k+ parts

-

91,354

$0.065

$0.063

$0.063

-

Ampacity Inc.

Singapore . 91,218 parts In-Stock

1+ parts

$0.065

100+ parts

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91,218

$0.065

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Corohmni

South Africa . 181 parts In-Stock

1+ parts

$0.076

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181

$0.076

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Corphita

USA . 1,472 parts In-Stock

1+ parts

$0.078

100+ parts

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1,472

$0.078

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Continental Prestige Electronics

USA . 4,463 parts In-Stock

1+ parts

$0.120

100+ parts

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$0.117

4,463

$0.120

-

-

$0.117

Argo Parts USA

USA . 1,670 parts In-Stock

1+ parts

$0.120

100+ parts

-

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$0.116

1,670

$0.120

-

-

$0.116

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$0.673

100+ parts

$0.639

1k+ parts

$0.639

10k+ parts

-

5,000

$0.673

$0.639

$0.639

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Aztec Data Supply Inc.

USA . 1,494 parts In-Stock

1+ parts

$0.880

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1,494

$0.880

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Kepictronics

USA . 24,000 parts In-Stock

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Perfect Parts

USA . 20,160 parts In-Stock

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Lixinc

USA . 19,894 parts In-Stock

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Futuretech Components

Singapore . 12,000 parts In-Stock

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Authorized Procurement Solutions

USA . 8,000 parts In-Stock

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SupplyDigital Components

Austria . 7,784 parts In-Stock

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Problanco Electronics

Mexico . 5,810 parts In-Stock

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Kulean Microsystems

USA . 1,596 parts In-Stock

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1,596

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Alle Elektronik GmbH

Germany . 1,059 parts In-Stock

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1,059

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UHIMA Technologies

Türkiye . 177 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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$0.117

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$0.114

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$0.111

100

-

$0.117

$0.114

$0.111

TANS Electronics

Latvia . 82 parts In-Stock

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82

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Overview

Elevate your electronic designs with the SBC847BPDXV6T1G from Onsemi. Known for their superior quality and reliability, Onsemi's small signal bipolar junction transistors (BJTs) are essential components for amplifier applications. With NPN and PNP configurations in a compact rectangular package, this transistor offers high DC current gain, low power dissipation, and a wide operating temperature range. Whether you're a seasoned engineer or a hobbyist, trust Onsemi to deliver top-notch performance and durability with the SBC847BPDXV6T1G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection to the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN AND PNP

Offers versatility in circuit design as it can be used for both NPN and PNP configurations.

Configuration: SEPARATE, 2 ELEMENTS

Allows for independent control of each element, enhancing the flexibility of the transistor in amplifier applications.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplifying signals.

Surface Mount: YES

Enables easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum Power Dissipation (Abs): 0.5 W

Capable of handling up to 0.5 W of power dissipation, suitable for low to medium power applications.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150°C, ensuring reliability in various environmental conditions.

Minimum DC Current Gain (hFE): 200

Provides high DC current gain, ensuring efficient signal amplification and performance.

Maximum Collector-Emitter Voltage: 45 V

Supports high collector-emitter voltage, making it suitable for a wide range of voltage requirements.

Nominal Transition Frequency (fT): 100 MHz

Offers high transition frequency, allowing for fast switching speeds in amplifier applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SBC847BPDXV6T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-F6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SBC847BPDXV6T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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