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MMBT2222AT-7-F

Diodes Incorporated

MMBT2222AT-7-F by Diodes Incorporated

Diodes Inc.'s MMBT2222AT-7-F is a NPN BJT transistor with max. power dissipation of 0.15W, hFE of 40, and max. collector-emitter voltage of 40V. Ideal for small signal applications in electronics due to its high transition frequency of 300MHz and compact SOT package design for surface mounting.

Median Price

$0.055

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 10,314 parts In-Stock

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$0.370

100+ parts

$0.166

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$0.091

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10,314

$0.370

$0.166

$0.091

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Adafruit Industries

USA . 70 parts In-Stock

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$1.248

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$1.186

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$1.186

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70

$1.248

$1.186

$1.186

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Arrow

USA . 1,212 parts In-Stock

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$0.040

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Verical

USA . 1,212 parts In-Stock

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DigiKey

USA . 72 parts In-Stock

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Distributors (In-Stock)

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Maritex

Poland . 122 parts In-Stock

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$0.055

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$0.029

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$0.028

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$0.025

122

$0.055

$0.029

$0.028

$0.025

Nova Conductors

Japan . 870 parts In-Stock

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$0.096

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870

$0.096

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TME

Poland . 619 parts In-Stock

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$0.290

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$0.110

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$0.064

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$0.041

619

$0.290

$0.110

$0.064

$0.041

Vyrian

USA . 163,826 parts In-Stock

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IBS Electronics

USA . 129,000 parts In-Stock

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Chip Stock

USA . 69,000 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

USA . 15,020 parts In-Stock

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Connector Distribution Corp

USA . 7,920 parts In-Stock

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Right Parts Inc.

USA . 7,920 parts In-Stock

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Bristol Electronics

USA . 7,042 parts In-Stock

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7,042

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NAC Semi

USA . 6,000 parts In-Stock

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EMSNET

USA . 5,455 parts In-Stock

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Sensible Micro Corp

USA . 1,421 parts In-Stock

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Bas Electronics GmbH & Co. KG

Germany . 1,400 parts In-Stock

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Prism Electronics

USA . 345 parts In-Stock

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345

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J2 Sourcing AB

Sweden . 100 parts In-Stock

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100

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Cyclops Electronics Ltd

UK . 67 parts In-Stock

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67

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Inland Empire Components Inc.

USA . 2 parts In-Stock

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2

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Distributors (Availability)

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Ampacity Inc.

Singapore . 129,707 parts In-Stock

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$0.025

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$0.025

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Semicontronic

India . 125,394 parts In-Stock

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$0.025

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$0.024

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$0.024

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125,394

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Benley Electronics

USA . 24,610 parts In-Stock

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$0.050

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Argo Parts USA

USA . 2,400 parts In-Stock

1+ parts

$0.069

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$0.067

2,400

$0.069

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$0.067

Continental Prestige Electronics

USA . 2,142 parts In-Stock

1+ parts

$0.069

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$0.068

2,142

$0.069

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$0.068

Bastille Electronics

Australia . 100 parts In-Stock

1+ parts

$0.096

100+ parts

$0.091

1k+ parts

$0.087

10k+ parts

$0.085

100

$0.096

$0.091

$0.087

$0.085

Component Stockers USA

USA . 1,918 parts In-Stock

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$0.190

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$0.080

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$0.050

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1,918

$0.190

$0.080

$0.050

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Aztec Data Supply Inc.

USA . 2,359 parts In-Stock

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$0.406

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2,359

$0.406

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Advanced Electronics

New Zealand . 70 parts In-Stock

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$1.248

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$1.186

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$1.186

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70

$1.248

$1.186

$1.186

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Modulus Dynamics

Lithuania . 11,679 parts In-Stock

1+ parts

$1.291

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$1.291

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$1.291

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11,679

$1.291

$1.291

$1.291

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Corohmni

South Africa . 470 parts In-Stock

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$1.768

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470

$1.768

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 70,812 parts In-Stock

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Component Connect

USA . 66,338 parts In-Stock

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Kepictronics

USA . 36,497 parts In-Stock

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Robosynatics

Brazil . 24,160 parts In-Stock

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$1.721

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$1.686

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$1.686

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$1.721

$1.686

$1.686

Lucentia Tech

USA . 24,160 parts In-Stock

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$1.721

1k+ parts

$1.686

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$1.686

24,160

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$1.686

$1.686

Eastek

USA . 24,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 11,878 parts In-Stock

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Glotronic Ltd.

UK . 7,200 parts In-Stock

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 4,434 parts In-Stock

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4,434

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Lixinc

USA . 1,474 parts In-Stock

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GreenTree Electronics

Israel . 991 parts In-Stock

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991

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Overview

Experience superior performance and reliability with the MMBT2222AT-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-notch quality small signal bipolar junction transistors that are perfect for a wide range of applications. Whether you're working on amplifiers, switches, or oscillators, this NPN transistor offers exceptional value with its high DC current gain, low power dissipation, and fast turn-on/off times. Trust in Diodes Incorporated to provide the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the transistor durable and resistant to external elements, ensuring a longer lifespan.

Polarity or Channel Type: NPN

NPN type transistors are commonly used in amplification circuits, making this product suitable for a wide range of applications.

Configuration: SINGLE

The single configuration simplifies circuit design and integration, making it easier to use in various electronic applications.

Surface Mount: YES

The surface mount capability allows for easy and efficient PCB assembly, saving time and labor costs during production.

Package Shape: RECTANGULAR

The rectangular package shape is space-efficient, making it suitable for compact electronic devices where space is a constraint.

Terminal Form: GULL WING

The gull wing terminal form provides secure solder connections, ensuring reliable electrical contact and improved performance.

Maximum Power Dissipation (Abs): 0.15 W

With a high maximum power dissipation, this transistor can handle power efficiently without overheating, making it reliable for long-term use.

Minimum DC Current Gain (hFE): 40

The minimum DC current gain of 40 ensures consistent amplification of the input signal, providing reliable and stable performance in amplification circuits.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can operate effectively in various environments, providing versatility and reliability in different applications.

Maximum Collector-Emitter Voltage: 40 V

The maximum collector-emitter voltage of 40V allows for safe operation within specified voltage ranges, ensuring protection against voltage spikes and surges.

Transistor Element Material: SILICON

Silicon is a common semiconductor material known for its reliability and stability, making this transistor a durable and high-performance choice.

Maximum Turn On Time (ton): 35 ns

The fast turn-on time of 35ns allows for quick response in switching applications, improving overall efficiency and performance of the circuit.

Maximum Collector Current (IC): 0.6 A

With a maximum collector current of 0.6A, this transistor can handle moderate current loads, suitable for a wide range of low-power applications.

Maximum Turn Off Time (toff): 285 ns

The maximum turn-off time of 285ns ensures efficient switching between on and off states, reducing power losses and improving overall circuit performance.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and solderability, ensuring long-term reliability and stability in various operating conditions.

Terminal Position: DUAL

The dual terminal position allows for flexible PCB layout and easy integration into different circuit configurations, enhancing versatility in design and application.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time at peak reflow temperature of 30 seconds, this transistor can withstand reflow soldering processes without compromising its performance or reliability.

Peak Reflow Temperature °C: 260

The peak reflow temperature of 260°C ensures proper soldering and connection integrity during PCB assembly, guaranteeing stable electrical performance.

Nominal Transition Frequency (fT): 300 MHz

With a high nominal transition frequency, this transistor can operate at high frequencies, making it suitable for RF and switching applications that require fast signal processing.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBT2222AT-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

285 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

MMBT2222AT-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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