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BC817-25-7-F

Diodes Incorporated

BC817-25-7-F by Diodes Incorporated

Diodes Inc's BC817-25-7-F is a NPN small signal BJT transistor with a max collector-emitter voltage of 45V and max collector current of 0.5A. It is commonly used for switching applications due to its high DC current gain (hFE) of 100 and fast nominal transition frequency of 100MHz.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

19

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 5,051 parts In-Stock

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$0.290

100+ parts

$0.109

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$0.072

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$0.051

5,051

$0.290

$0.109

$0.072

$0.051

Verical

USA . 1,134,000 parts In-Stock

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Arrow

USA . 66,000 parts In-Stock

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$0.028

Element14

Singapore . 3,490 parts In-Stock

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$0.123

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$0.085

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$0.084

3,490

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$0.123

$0.085

$0.084

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.050

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$0.050

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Vyrian

USA . 190,340 parts In-Stock

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IBS Electronics

USA . 189,000 parts In-Stock

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NAC Semi

USA . 147,000 parts In-Stock

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Chip Stock

USA . 35,000 parts In-Stock

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Rutronik

Germany . 13,800 parts In-Stock

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$0.028

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$0.028

ComSIT USA

USA . 3,780 parts In-Stock

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Bristol Electronics

USA . 2,960 parts In-Stock

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Ashlea Components Ltd

UK . 2,800 parts In-Stock

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2,800

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VNN

France . 2,789 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,879 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,266 parts In-Stock

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Semtec, LLC

USA . 135 parts In-Stock

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135

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Sensible Micro Corp

USA . 85 parts In-Stock

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$0.019

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$0.018

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EMSNET

USA . 85 parts In-Stock

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85

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Semicontronic

India . 350,407 parts In-Stock

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$0.015

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$0.015

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$0.015

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350,407

$0.015

$0.015

$0.015

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Ampacity Inc.

Singapore . 184,331 parts In-Stock

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$0.015

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Argo Parts USA

USA . 3,195 parts In-Stock

1+ parts

$0.041

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$0.040

3,195

$0.041

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$0.040

Corohmni

South Africa . 817 parts In-Stock

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$0.043

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817

$0.043

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Modulus Dynamics

Lithuania . 750 parts In-Stock

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$0.047

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$0.046

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$0.045

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750

$0.047

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Bastille Electronics

Australia . 50 parts In-Stock

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$0.050

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$0.048

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$0.045

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$0.044

50

$0.050

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$0.044

Component Stockers USA

USA . 1,160,112 parts In-Stock

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$0.110

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$0.060

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$0.040

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1,160,112

$0.110

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Advanced Electronics

New Zealand . 1,200 parts In-Stock

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$0.712

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$0.648

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$0.584

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$0.712

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Aztec Data Supply Inc.

USA . 2,531 parts In-Stock

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$1.464

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Perfect Parts

USA . 381,463 parts In-Stock

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GreenTree Electronics

Israel . 129,000 parts In-Stock

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Eastek

USA . 123,000 parts In-Stock

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Metaverse IC Inc.

Canada . 99,000 parts In-Stock

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Continental Prestige Electronics

USA . 72,126 parts In-Stock

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$0.055

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$0.035

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Robosynatics

Brazil . 25,284 parts In-Stock

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$0.042

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$0.041

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Lucentia Tech

USA . 25,284 parts In-Stock

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Glotronic Ltd.

UK . 19,200 parts In-Stock

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iodParts Technologies Inc.

India . 17,398 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,211 parts In-Stock

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S.R.D Solutions

India . 6,000 parts In-Stock

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Kepictronics

USA . 3,000 parts In-Stock

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FE SAS

France . 3,000 parts In-Stock

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Futuretech Components

Singapore . 3,000 parts In-Stock

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Authorized Procurement Solutions

USA . 2,757 parts In-Stock

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Cyclops Electronics Ltd (Excess)

UK . 2,378 parts In-Stock

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Lixinc

USA . 2,339 parts In-Stock

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Overview

Discover the BC817-25-7-F, a high-quality small signal bipolar junction transistor (BJT) by Diodes Incorporated. With its NPN polarity and single configuration, this transistor is perfect for switching applications. Its surface mount design and rectangular shape make it easy to install, while its matte tin terminal finish ensures durability. With a maximum collector-emitter voltage of 45V and a maximum collector current of 0.5A, this transistor offers exceptional performance. Trust Diodes Incorporated, a renowned manufacturer known for their commitment to excellence. Upgrade your electronics with the BC817-25-7-F and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability in various environments.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications, making it versatile and widely compatible with different circuits.

Maximum Power Dissipation (Abs): 0.31 W

Can handle relatively high power levels, suitable for applications requiring power amplification or switching.

Nominal Transition Frequency (fT): 100 MHz

Allows for high-speed switching, making it ideal for applications where fast response times are required.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC817-25-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BC817-25-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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