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MMBTA42-7-F

Diodes Incorporated

MMBTA42-7-F by Diodes Incorporated

Diodes Inc. MMBTA42-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and VCEO of 300V. Ideal for small outline packages with Gull Wing terminals in surface mount configurations.

Median Price

$0.026

Lifecycle Status

Suppliers In-Stock

38

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 207,000 parts In-Stock

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$0.027

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$0.027

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Mouser Electronics

USA . 698,172 parts In-Stock

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$0.210

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$0.081

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$0.052

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698,172

$0.210

$0.081

$0.052

$0.042

DigiKey

USA . 196,539 parts In-Stock

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$0.080

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Arrow

USA . 237,000 parts In-Stock

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Verical

USA . 237,000 parts In-Stock

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Future Electronics

Canada . 90,000 parts In-Stock

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Voyager Components

USA . 204 parts In-Stock

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$0.050

IBS Electronics

USA . 3,741,000 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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$0.075

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Maritex

Poland . 6,000 parts In-Stock

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$0.124

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6,000

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Component Electronics Inc.

Canada . 50 parts In-Stock

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$0.150

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$0.120

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50

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TME

Poland . 1,878 parts In-Stock

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$0.063

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1,878

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Vyrian

USA . 1,432,689 parts In-Stock

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Component Sense

UK . 416,803 parts In-Stock

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NAC Semi

USA . 75,000 parts In-Stock

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Chip Stock

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Global Solutions Electronics Company

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Right Parts Inc.

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ComSIT Distribution GmbH

Germany . 4,930 parts In-Stock

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ComSIT USA

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Rebound Electronics

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Semtec, LLC

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M&R Communications

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Speed Components Ltd

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Atlantic Semiconductor

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ACDS - Activité Composants Distribution Service

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Connector Distribution Corp

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Sensible Micro Corp

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Semi Source

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Classic Components Corporation

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Prism Electronics

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Bristol Electronics

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Inventory MP

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LWI Electronics Inc

India . 332 parts In-Stock

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Mentor Electronics Marketing, LLC

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Electronics Depot

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Semicontronic

India . 3,440,009 parts In-Stock

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Ampacity Inc.

Singapore . 2,065,076 parts In-Stock

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Continental Prestige Electronics

USA . 5,872 parts In-Stock

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Argo Parts USA

USA . 1,034 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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$0.074

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$0.071

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$0.074

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Advanced Electronics

New Zealand . 1,100 parts In-Stock

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$0.322

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$0.306

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$0.306

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Aztec Data Supply Inc.

USA . 2,257 parts In-Stock

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$1.188

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Modulus Dynamics

Lithuania . 20,493 parts In-Stock

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$1.344

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$1.344

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Corohmni

South Africa . 37 parts In-Stock

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$1.872

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Andel Nordic

Denmark . 4,839 parts In-Stock

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$6.306

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$6.054

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Infinite Electronics LLP (Excess)

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Eastek

USA . 1,098,000 parts In-Stock

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Perfect Parts

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Glotronic Ltd.

UK . 201,600 parts In-Stock

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RC Electronics

USA . 102,825 parts In-Stock

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Metaverse IC Inc.

Canada . 70,000 parts In-Stock

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Lucentia Tech

USA . 37,590 parts In-Stock

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$1.657

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$1.623

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$1.623

$1.623

QUARKTWIN TECHNOLOGY LTD

USA . 26,310 parts In-Stock

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Futuretech Components

Singapore . 20,000 parts In-Stock

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Robosynatics

Brazil . 18,795 parts In-Stock

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$1.657

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$1.623

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$1.623

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$1.623

$1.623

Lixinc

USA . 17,662 parts In-Stock

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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CPlus Electronics

USA . 9,000 parts In-Stock

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Kepictronics

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Cyclops Electronics Ltd (Excess)

UK . 4,480 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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S.R.D Solutions

India . 3,000 parts In-Stock

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Overview

Enhance your electronic projects with the MMBTA42-7-F by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated ensures top-notch quality and reliability. This Small Signal Bipolar Junction Transistor (BJT) is perfect for switching applications, offering a maximum VCEsat of 0.5V and a minimum DC Current Gain of 40. With a compact design and high performance, this NPN transistor is ideal for various projects where space is a concern. Trust Diodes Incorporated to deliver exceptional value and innovation with the MMBTA42-7-F.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used and versatile for various switching applications.

Configuration: SINGLE

Simplified design with a single transistor in the package.

Transistor Application: SWITCHING

Designed specifically for switching applications.

Surface Mount: YES

Allows for easy and compact integration onto circuit boards.

Maximum VCEsat: 0.5 V

Low VCEsat minimizes power loss and improves efficiency in switching operations.

Package Shape: RECTANGULAR

Space-efficient design for compact circuit layouts.

No. of Terminals: 3

Simplifies connection and installation.

Maximum Power Dissipation Ambient: 0.3 W

Suitable for low to moderate power applications.

Minimum DC Current Gain (hFE): 40

Provides stable and reliable amplification.

Maximum Operating Temperature: 150 °C

Can withstand high-temperature environments.

Maximum Collector-Base Capacitance: 3 pF

Low capacitance for high-speed switching applications.

Maximum Collector-Emitter Voltage: 300 V

Sufficient voltage handling capability for many industrial applications.

Transistor Element Material: SILICON

Silicon transistors offer reliable performance and high efficiency.

Minimum Operating Temperature: -55 °C

Suitable for wide temperature range applications.

Maximum Collector Current (IC): 0.5 A

Able to handle moderate current levels.

Terminal Finish: MATTE TIN

Provides good conductivity and solderability.

Terminal Position: DUAL

Offers flexibility in installation and connectivity options.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for effective solder reflow process during assembly.

Peak Reflow Temperature °C: 260

Compatible with industry-standard reflow soldering processes.

Reference Standard: MIL-STD-202

Complies with a recognized industry standard for quality and reliability.

Nominal Transition Frequency (fT): 50 MHz

Suitable for high-frequency applications such as RF amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MMBTA42-7-F attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

300 V

Configuration:

Minimum DC Current Gain (hFE):

40

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.3 W

Qualification:

Not Qualified

Reference Standard:

MIL-STD-202

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.5 V

Trade Compliance

MMBTA42-7-F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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