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SN75468DE4

Texas Instruments

SN75468DE4 by Texas Instruments

SN75468DE4 by Texas Instruments is a NPN BJT transistor with VCEsat of 1.6V, IC of 0.5A, and VCEO of 100V. It is used for switching applications in surface mount designs due to its small outline package style and Gull Wing terminals.

Median Price

$1.850

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 634 parts In-Stock

1+ parts

$1.850

100+ parts

-

1k+ parts

$0.563

10k+ parts

$0.464

634

$1.850

-

$0.563

$0.464

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,242 parts In-Stock

1+ parts

$0.988

100+ parts

-

1k+ parts

-

10k+ parts

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2,242

$0.988

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Chip Stock

USA . 79,200 parts In-Stock

1+ parts

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79,200

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Vyrian

USA . 2,727 parts In-Stock

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2,727

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-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 264 parts In-Stock

1+ parts

$0.433

100+ parts

-

1k+ parts

$1.601

10k+ parts

-

264

$0.433

-

$1.601

-

DigiPath Technology Company

USA . 736 parts In-Stock

1+ parts

$0.477

100+ parts

-

1k+ parts

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-

736

$0.477

-

-

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IDEA Electronic Components Group

UK . 966 parts In-Stock

1+ parts

$0.487

100+ parts

-

1k+ parts

$0.438

10k+ parts

-

966

$0.487

-

$0.438

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ChromeModa Solutions

Germany . 420 parts In-Stock

1+ parts

$0.487

100+ parts

$0.399

1k+ parts

-

10k+ parts

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420

$0.487

$0.399

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Corphita

USA . 4,743 parts In-Stock

1+ parts

$0.936

100+ parts

-

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4,743

$0.936

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Semicontronic

India . 254 parts In-Stock

1+ parts

$1.030

100+ parts

$1.004

1k+ parts

$0.999

10k+ parts

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254

$1.030

$1.004

$0.999

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Ampacity Inc.

Singapore . 226 parts In-Stock

1+ parts

$1.030

100+ parts

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226

$1.030

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Corohmni

South Africa . 238 parts In-Stock

1+ parts

$1.040

100+ parts

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238

$1.040

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Overview

Unlock the power of efficient switching with the Texas Instruments SN75468DE4, a high-quality NPN small signal transistor perfect for various applications. Manufactured by industry leader Texas Instruments, this transistor offers reliability, versatility, and performance in a compact package. Whether you're designing electronic circuits or creating innovative projects, this transistor provides exceptional value with its low VCEsat and high collector-emitter voltage. Trust Texas Instruments for superior quality and elevate your designs with the SN75468DE4.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Polarity or Channel Type: NPN

Allows for easy integration in circuits that require NPN transistors, making this product versatile and compatible with a wide range of applications.

Configuration: COMPLEX

Enables the transistor to handle more complex switching operations and functions, enhancing its performance in advanced applications.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance and reliable operation in scenarios where fast switching is required.

Surface Mount: YES

Facilitates easy and secure mounting on circuit boards, saving space and simplifying the assembly process.

Maximum VCEsat: 1.6 V

Low VCEsat minimizes power dissipation and improves efficiency, making this transistor suitable for low-power applications.

Package Shape: RECTANGULAR

Provides a compact and standardized form factor, making it easy to design and integrate into various electronic devices.

Terminal Form: GULL WING

Gull wing terminals make soldering easier and more reliable, ensuring a secure electrical connection for stable performance.

No. of Elements: 7

Multiple elements provide additional functionality and flexibility in circuit design, allowing for more complex operations to be performed.

No. of Terminals: 16

Multiple terminals offer various connection options, enabling versatile circuit configurations and compatibility with different circuit layouts.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board, making it ideal for compact electronic devices with limited space.

Maximum Operating Temperature: 70 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures, ensuring reliable performance in harsh environments.

Maximum Collector-Emitter Voltage: 100 V

High collector-emitter voltage rating allows for operation in circuits with higher voltages, expanding the range of applications for this transistor.

Transistor Element Material: SILICON

Silicon material provides good thermal stability and performance, ensuring consistent operation over a wide range of operating conditions.

Minimum Operating Temperature: 0 °C

Low minimum operating temperature ensures reliable performance even in cold environments, making this transistor suitable for various applications.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current loads, making it suitable for a wide range of applications.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel palladium gold finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability and performance.

Terminal Position: DUAL

Dual terminal position offers flexibility in mounting and connection options, making it easier to integrate this transistor into different circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Designed to withstand peak reflow temperatures for up to 30 seconds, ensuring proper soldering and secure connections during assembly.

Peak Reflow Temperature °C: 260

Can withstand high peak reflow temperatures up to 260°C, making it suitable for surface mount soldering processes without compromising performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SN75468DE4 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JEDEC-95 Code:

MS-012AC

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

SN75468DE4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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