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SN75466DR

Texas Instruments

SN75466DR by Texas Instruments

SN75466DR by Texas Instruments is a NPN Darlington transistor with 7 banks, built-in diode and resistor. It has a min DC current gain of 1000, max collector-emitter voltage of 100V, and can handle up to 0.5A collector current. Ideal for switching applications in small outline packages with gull wing terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 7,207 parts In-Stock

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Digiode

USA . 1,919 parts In-Stock

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1,919

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Parana Technologies

USA . 1,495 parts In-Stock

1+ parts

$1.740

100+ parts

-

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$2.319

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1,495

$1.740

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$2.319

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DigiPath Technology Company

USA . 1,169 parts In-Stock

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$1.916

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$1.763

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1,169

$1.916

$1.763

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ChromeModa Solutions

Germany . 4,660 parts In-Stock

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$1.955

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$1.603

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4,660

$1.955

$1.603

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IDEA Electronic Components Group

UK . 18 parts In-Stock

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$1.955

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$1.760

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18

$1.955

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$1.760

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AZTECH Wire

Italy . 491 parts In-Stock

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$8.727

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491

$8.727

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One Stop Electronics

USA . 1,268 parts In-Stock

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$10.050

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1,268

$10.050

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Semicontronic

India . 293 parts In-Stock

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$11.050

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$10.774

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$10.718

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293

$11.050

$10.774

$10.718

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Ampacity Inc.

Singapore . 1,115 parts In-Stock

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$34.050

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$34.050

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Corphita

USA . 3,086 parts In-Stock

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Corohmni

South Africa . 100 parts In-Stock

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Overview

Discover the quality and precision of Texas Instruments with the SN75466DR Small Signal Bipolar Junction Transistor. Perfect for switching applications, this NPN transistor offers 7 banks of Darlington configuration with built-in diode and resistor. With a maximum collector-emitter voltage of 100V and a minimum DC current gain of 1000, this transistor ensures reliable performance. Ideal for surface mount applications, the SN75466DR comes in a compact rectangular package, making it easy to integrate into your designs. Trust in Texas Instruments for superior quality and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type: NPN

Commonly used type of BJT, allowing for easy integration into circuits and compatibility with other components.

Configuration: 7 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

Darlington configuration offers high current gain, built-in diode allows for easy switching applications, and built-in resistor simplifies circuit design.

Transistor Application: SWITCHING

Designed for efficient switching operations, ideal for applications where rapid on/off transitions are needed.

Surface Mount: YES

Enables easy and secure mounting on PCBs, reducing assembly time and space requirements.

Package Shape: RECTANGULAR

Compact and space-efficient design, suitable for densely packed circuit layouts.

Terminal Form: GULL WING

Facilitates easy soldering and reliable connection to the PCB, ensuring stable electrical performance.

Minimum DC Current Gain (hFE): 1000

High current gain ensures consistent and reliable amplification of the input signal.

Maximum Collector-Emitter Voltage: 100 V

Can withstand high voltage levels, making it versatile for a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon-based material offers excellent performance and reliability, commonly used in semiconductor devices.

Maximum Collector Current (IC): 0.5 A

Sufficient collector current capacity for most small signal applications, ensuring stable operation.

Terminal Position: DUAL

Dual terminal position allows for flexible PCB layout options and convenient connection in various circuit configurations.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SN75466DR attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G16

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SN75466DR Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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