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SN75467D

Texas Instruments

SN75467D by Texas Instruments

SN75467D by Texas Instruments is a NPN BJT transistor for switching applications. It features a max collector-emitter voltage of 100V, with 7 elements and 16 terminals in a small outline package. This complex transistor is surface mountable and made of silicon, suitable for various electronic circuit designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 6,709 parts In-Stock

1+ parts

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6,709

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Digiode

USA . 491 parts In-Stock

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491

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 1,135 parts In-Stock

1+ parts

$0.393

100+ parts

-

1k+ parts

$1.584

10k+ parts

-

1,135

$0.393

-

$1.584

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DigiPath Technology Company

USA . 1,679 parts In-Stock

1+ parts

$0.433

100+ parts

$0.399

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-

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1,679

$0.433

$0.399

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IDEA Electronic Components Group

UK . 2,264 parts In-Stock

1+ parts

$0.442

100+ parts

-

1k+ parts

$0.398

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2,264

$0.442

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$0.398

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ChromeModa Solutions

Germany . 378 parts In-Stock

1+ parts

$0.442

100+ parts

$0.362

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-

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378

$0.442

$0.362

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One Stop Electronics

USA . 1,172 parts In-Stock

1+ parts

$4.050

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-

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1,172

$4.050

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AZTECH Wire

Italy . 479 parts In-Stock

1+ parts

$6.973

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479

$6.973

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Ampacity Inc.

Singapore . 1,345 parts In-Stock

1+ parts

$51.050

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1,345

$51.050

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Semicontronic

India . 1,352 parts In-Stock

1+ parts

$54.050

100+ parts

$52.699

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$52.428

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1,352

$54.050

$52.699

$52.428

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Corphita

USA . 3,032 parts In-Stock

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3,032

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Corohmni

South Africa . 476 parts In-Stock

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476

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Overview

Experience the power of Texas Instruments with the SN75467D Small Signal Bipolar Junction Transistor. This versatile NPN transistor is perfect for switching applications, offering reliable performance and high-quality construction. With a maximum collector-emitter voltage of 100V, this transistor is designed to meet your needs with precision and efficiency. Trust in Texas Instruments for superior products that deliver exceptional value and unmatched benefits. Whether you're in need of a complex configuration or surface mount capabilities, the SN75467D has you covered. Elevate your projects with the trusted reliability of Texas Instruments.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material that provides good protection for the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in electronic circuits, making this product versatile for a wide range of applications.

Configuration: COMPLEX

The complex configuration allows for advanced functionality and performance in switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient operation in these scenarios.

Surface Mount: YES

Surface mount capability makes it easier to integrate this transistor into circuit boards, saving both space and assembly time.

Package Shape: RECTANGULAR

Rectangular shape allows for efficient placement and orientation on circuit boards.

Terminal Form: GULL WING

Gull wing terminals provide strong mechanical support and easier soldering during assembly.

No. of Elements: 7

Multiple elements allow for enhanced functionality and versatility in circuit designs.

No. of Terminals: 16

Higher number of terminals offer greater connectivity options and flexibility in circuit designs.

Package Style (Meter): SMALL OUTLINE

Compact small outline package style saves space on circuit boards and facilitates high density layouts.

Maximum Collector-Emitter Voltage: 100 V

Higher maximum voltage rating allows for use in a variety of circuit designs, providing greater flexibility.

Transistor Element Material: SILICON

Silicon material ensures reliable and stable performance, making this transistor a durable choice.

Terminal Position: DUAL

Dual terminal position allows for convenient and secure connections, reducing the risk of connectivity issues.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SN75467D attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JESD-30 Code:

R-PDSO-G16

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

SN75467D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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