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SN75468DRE4

Texas Instruments

SN75468DRE4 by Texas Instruments

SN75468DRE4 by Texas Instruments is a NPN BJT transistor for switching applications. It has a max VCEsat of 1.6V, IC of 0.5A, and VCEO of 100V. Ideal for surface mount designs in small outline packages with Gull Wing terminals.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,745 parts In-Stock

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Digiode

USA . 4,148 parts In-Stock

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Nova Conductors

Japan . 23 parts In-Stock

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23

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Parana Technologies

USA . 1,427 parts In-Stock

1+ parts

$0.368

100+ parts

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$1.572

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1,427

$0.368

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$1.572

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DigiPath Technology Company

USA . 170 parts In-Stock

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$0.405

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$0.372

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170

$0.405

$0.372

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ChromeModa Solutions

Germany . 2,429 parts In-Stock

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$0.413

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$0.339

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2,429

$0.413

$0.339

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IDEA Electronic Components Group

UK . 881 parts In-Stock

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$0.413

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$0.372

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881

$0.413

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$0.372

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Corohmni

South Africa . 1,158 parts In-Stock

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$1.553

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$1.553

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AZTECH Wire

Italy . 621 parts In-Stock

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$18.544

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621

$18.544

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Ampacity Inc.

Singapore . 999 parts In-Stock

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$31.050

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$31.050

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One Stop Electronics

USA . 1,514 parts In-Stock

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$38.050

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$38.050

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Continental Prestige Electronics

USA . 4,834 parts In-Stock

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Aranea Global

USA . 2,000 parts In-Stock

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Corphita

USA . 1,653 parts In-Stock

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Argo Parts USA

USA . 300 parts In-Stock

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Overview

Enhance your electronic projects with the SN75468DRE4 by Texas Instruments, a top-quality Small Signal Bipolar Junction Transistor. Manufactured with precision and reliability in mind, this NPN transistor is ideal for switching applications, offering a maximum VCEsat of 1.6V and a maximum Collector-Emitter Voltage of 100V. Whether you're a hobbyist or a professional, this versatile component is sure to add value to your designs with its superior performance and durability. Upgrade your circuits today and experience the benefits of Texas Instruments' industry-leading technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

Offers versatility in circuit design as NPN transistors are commonly used in amplification and switching applications.

Configuration: COMPLEX

Allows for intricate circuit designs and enables the transistor to perform various functions efficiently.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds and low power consumption are required.

Surface Mount: YES

Allows for easy and quick installation on circuit boards, saving time and effort during production.

Maximum VCEsat: 1.6 V

Low saturation voltage ensures minimal power loss and high efficiency in switching operations.

Package Shape: RECTANGULAR

Compact design saves space on the circuit board and allows for dense packing of components.

Terminal Form: GULL WING

Facilitates easy soldering onto the circuit board, ensuring secure connections.

No. of Elements: 7

Multiple elements provide added functionality and flexibility in circuit design.

No. of Terminals: 16

A greater number of terminals allow for more connections and integration with other components.

Package Style (Meter): SMALL OUTLINE

Slim profile enhances space efficiency and enables the transistor to be used in compact electronic devices.

Maximum Operating Temperature: 150 °C

High operating temperature range ensures reliable performance in various environmental conditions.

Maximum Collector-Emitter Voltage: 100 V

Withstands high voltages, making it suitable for applications requiring high voltage handling.

Transistor Element Material: SILICON

Provides high performance and reliability, making it a popular choice in semiconductor devices.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current loads, suitable for low to medium power applications.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures reliable and durable terminal connections, preventing corrosion and ensuring long-term performance.

Terminal Position: DUAL

Dual terminal position allows for flexible routing of connections, enabling versatile circuit layouts.

Maximum Time At Peak Reflow Temperature (s): 30

Resistant to high temperatures during soldering, ensuring the transistor's integrity during assembly.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures, making it suitable for lead-free soldering processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SN75468DRE4 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

100 V

Configuration:

JEDEC-95 Code:

MS-012AC

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

1.6 V

Trade Compliance

SN75468DRE4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

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Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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