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SN75466J

Texas Instruments

SN75466J by Texas Instruments

Small Signal Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,093 parts In-Stock

1+ parts

-

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3,093

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Digiode

USA . 2,447 parts In-Stock

1+ parts

-

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-

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2,447

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ComSIT Distribution GmbH

Germany . 49 parts In-Stock

1+ parts

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49

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ComSIT USA

USA . 49 parts In-Stock

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49

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LittleDiode

UK . 2 parts In-Stock

1+ parts

-

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2

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 546 parts In-Stock

1+ parts

$1.636

100+ parts

-

1k+ parts

$2.256

10k+ parts

-

546

$1.636

-

$2.256

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DigiPath Technology Company

USA . 333 parts In-Stock

1+ parts

$1.801

100+ parts

$1.657

1k+ parts

-

10k+ parts

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333

$1.801

$1.657

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ChromeModa Solutions

Germany . 4,450 parts In-Stock

1+ parts

$1.838

100+ parts

$1.507

1k+ parts

-

10k+ parts

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4,450

$1.838

$1.507

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IDEA Electronic Components Group

UK . 317 parts In-Stock

1+ parts

$1.838

100+ parts

-

1k+ parts

$1.654

10k+ parts

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317

$1.838

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$1.654

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AZTECH Wire

Italy . 626 parts In-Stock

1+ parts

$19.709

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626

$19.709

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One Stop Electronics

USA . 1,463 parts In-Stock

1+ parts

$34.050

100+ parts

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1,463

$34.050

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Corphita

USA . 343 parts In-Stock

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343

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Assy Fe

Spain . 25 parts In-Stock

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25

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) SN75466J attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Peak Reflow Temperature (C):

NOT SPECIFIED

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

SN75466J Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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