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BC847C,215

NXP Semiconductors

BC847C,215 by NXP Semiconductors

NXP Semiconductors' BC847C,215 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 420, it operates at max temp of 150°C. This GULL WING terminal transistor has a max IC of 0.1A and VCE of 45V, ideal for small outline packages in electronics.

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$0.016

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Elektronika Sales Private Limited

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Verical

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Singapore . 4,452 parts In-Stock

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Modulus Dynamics

Lithuania . 9,188 parts In-Stock

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Advanced Electronics

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Aranea Global

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AZTECH Wire

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Overview

Discover the NXP Semiconductors BC847C,215, a high-quality Small Signal Bipolar Junction Transistor ideal for switching applications. With a compact rectangular package and Gull Wing terminals, this NPN transistor offers reliable performance with a low VCEsat of 0.6V and a maximum collector current of 0.1A. Trust in NXP's reputation for excellence in semiconductor manufacturing to deliver a product that exceeds expectations. Whether you're designing consumer electronics or industrial automation systems, the BC847C,215 provides the efficiency and reliability you need to bring your projects to life. Unlock the potential of this versatile component and elevate your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is known for its durability and cost-effectiveness, making the product suitable for various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching circuits, offering good performance and reliability.

Configuration: SINGLE

SINGLE configuration simplifies circuit design and integration, making the product easy to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times and efficient switching capabilities.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and effort during manufacturing.

Maximum VCEsat: 0.6 V

Low VCEsat voltage minimizes power dissipation and heat generation, improving overall efficiency of the product.

Package Shape: RECTANGULAR

Rectangular package shape enables compact and space-saving circuit designs, ideal for applications with limited space.

Terminal Form: GULL WING

Gull wing terminals provide reliable solder joints and easy soldering during assembly, ensuring stable connections.

No. of Terminals: 3

Three terminals offer simple and straightforward connections, reducing the chances of errors during installation.

Maximum Power Dissipation (Abs): 0.3 W

Low power dissipation ensures the transistor operates within safe temperature limits, enhancing its reliability and lifespan.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB, suitable for compact electronic devices and applications.

Minimum DC Current Gain (hFE): 420

High DC current gain allows for amplification of weak signals with low power consumption, improving overall signal quality.

Maximum Operating Temperature: 150 °C

Wide operating temperature range ensures the transistor performs reliably in various environmental conditions without overheating.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating provides enhanced voltage handling capabilities, ensuring reliable operation in different voltage levels.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and high thermal conductivity, enhancing the performance and reliability of the transistor.

Maximum Collector Current (IC): 0.1 A

Suitable for low to medium current applications, with high accuracy and stability in current flow.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, extending the product's lifespan and durability.

Terminal Position: DUAL

Dual terminal positions offer flexibility in circuit design and integration, allowing for versatile application possibilities.

Case Connection: COLLECTOR

Collector case connection facilitates easy circuit design and connection, enhancing the product's usability and performance.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures proper solder reflow process during assembly, maintaining solder joint integrity and product reliability.

Peak Reflow Temperature °C: 260

High peak reflow temperature capability ensures proper soldering and bonding, meeting industry standards for quality and reliability.

Reference Standard: IEC-60134

Compliance with industry standards ensures quality and performance consistency, making the product a reliable choice for various applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast signal switching and amplification, suitable for high-frequency applications and circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847C,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

420

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC847C,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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