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NUS2401SNT1G

Onsemi

NUS2401SNT1G by Onsemi

NUS2401SNT1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for switching applications. It has 3 elements, 6 terminals, hFE of 150, max power dissipation of 0.35W, and operates up to 150 °C. With a max VCE of 50V and IC of 0.2A, it's designed for surface mount in a small outline package.

Median Price

$0.270

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 1,341,000 parts In-Stock

1+ parts

-

100+ parts

$0.280

1k+ parts

$0.233

10k+ parts

$0.207

1,341,000

-

$0.280

$0.233

$0.207

DigiKey

USA . 1,341,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.350

10k+ parts

-

1,341,000

-

-

$0.350

-

Farnell

UK . 1,341,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

$0.213

1,341,000

-

-

-

$0.213

Verical

USA . 1,305,000 parts In-Stock

1+ parts

-

100+ parts

-

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10k+ parts

$0.259

1,305,000

-

-

-

$0.259

Distributors (In-Stock)

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Digiode

USA . 1,335 parts In-Stock

1+ parts

$0.229

100+ parts

-

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1,335

$0.229

-

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-

Chip Stock

USA . 46,000 parts In-Stock

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46,000

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Vyrian

USA . 8,665 parts In-Stock

1+ parts

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8,665

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Bristol Electronics

USA . 6,937 parts In-Stock

1+ parts

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6,937

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Dan-Mar Components

USA . 6,937 parts In-Stock

1+ parts

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6,937

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ACDS - Activité Composants Distribution Service

France . 2,288 parts In-Stock

1+ parts

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2,288

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Distributors (Availability)

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Corohmni

South Africa . 262 parts In-Stock

1+ parts

$0.213

100+ parts

-

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262

$0.213

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Corphita

USA . 185 parts In-Stock

1+ parts

$0.217

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185

$0.217

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Component Stockers USA

USA . 1,904,123 parts In-Stock

1+ parts

$0.250

100+ parts

$0.230

1k+ parts

$0.210

10k+ parts

$0.210

1,904,123

$0.250

$0.230

$0.210

$0.210

AZTECH Wire

Italy . 826 parts In-Stock

1+ parts

$20.430

100+ parts

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826

$20.430

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Continental Prestige Electronics

USA . 1,341,000 parts In-Stock

1+ parts

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100+ parts

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$0.213

10k+ parts

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1,341,000

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$0.213

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Perfect Parts

USA . 29,562 parts In-Stock

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29,562

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Problanco Electronics

Mexico . 7,457 parts In-Stock

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7,457

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Kulean Microsystems

USA . 6,860 parts In-Stock

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6,860

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TANS Electronics

Latvia . 5,862 parts In-Stock

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5,862

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Assy Fe

Spain . 4,340 parts In-Stock

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4,340

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Kepictronics

USA . 3,500 parts In-Stock

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3,500

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iodParts Technologies Inc.

India . 3,000 parts In-Stock

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3,000

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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2,700

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SupplyDigital Components

Austria . 1,967 parts In-Stock

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1,967

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UHIMA Technologies

Türkiye . 962 parts In-Stock

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962

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Overview

Discover the NUS2401SNT1G by Onsemi, a high-quality small signal bipolar junction transistor perfect for switching applications. With a complex configuration and NPN and PNP polarity options, this transistor offers versatility like no other. Its compact rectangular shape and gull-wing terminals make it easy to integrate into various electronic devices. Experience the reliability and performance that Onsemi is known for, all while enjoying the convenience of surface mount installation. Upgrade your projects with the NUS2401SNT1G and unlock endless possibilities in the world of electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good mechanical strength and insulation properties, making the transistor durable and reliable.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP type transistors allows for greater flexibility in circuit design options.

Configuration: COMPLEX

The complex configuration allows for more advanced circuit applications and versatility in use.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required, making it suitable for various electronic devices.

Surface Mount: YES

Designed for easy and efficient surface mounting onto PCBs, improving manufacturing processes.

Maximum Power Dissipation: 0.35 W

With a relatively high power dissipation capability, the transistor can handle moderate power levels efficiently.

Terminal Form: GULL WING

The gull wing terminal form facilitates a secure and reliable connection during soldering processes.

No. of Elements: 3

Having multiple elements allows for more complex circuit designs and functionality.

Maximum Collector-Emitter Voltage: 50 V

The high voltage rating enables the transistor to be used in a wide range of applications without risk of failure.

Maximum Collector Current: 0.2 A

Capable of handling relatively high collector current, making it suitable for a variety of electronic applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NUS2401SNT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTORS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

3

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NUS2401SNT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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