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NUS2501W6T1

Onsemi

NUS2501W6T1 by Onsemi

NUS2501W6T1 by Onsemi is a NPN BJT with built-in diode and resistor, ideal for switching applications. It features a hFE of 80, VCE of 50V, and IC of 0.1A. With a Gull Wing terminal form and small outline package style, it is designed for surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,954 parts In-Stock

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Digiode

USA . 177 parts In-Stock

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177

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SupplyDigital Components

Austria . 7,769 parts In-Stock

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7,769

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Problanco Electronics

Mexico . 6,476 parts In-Stock

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TANS Electronics

Latvia . 4,130 parts In-Stock

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Kulean Microsystems

USA . 3,338 parts In-Stock

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Corphita

USA . 756 parts In-Stock

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UHIMA Technologies

Türkiye . 126 parts In-Stock

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Corohmni

South Africa . 92 parts In-Stock

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Overview

Enhance your electronic projects with the NUS2501W6T1 by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, this NPN transistor is designed for switching applications and comes in a convenient surface mount package. With a built-in diode and resistor, this transistor offers value and versatility for a wide range of projects. Trust in Onsemi's reputation for excellence and choose the NUS2501W6T1 for reliable performance and superior results.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, making this product versatile.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Having a built-in diode and resistor simplifies circuit design and saves space on the circuit board.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient performance in such scenarios.

Surface Mount: YES

The surface-mount capability allows for easy and convenient installation on PCBs, saving time and effort.

Package Shape: RECTANGULAR

The rectangular shape of the package ensures compatibility with standard PCB layouts.

Terminal Form: GULL WING

The gull wing terminal form facilitates easy soldering and ensures secure connections.

No. of Terminals: 6

Having 6 terminals provides flexibility in circuit connections and allows for multiple configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and is suitable for compact designs.

Minimum DC Current Gain (hFE): 80

A high minimum DC current gain ensures reliable and consistent performance in amplification and switching circuits.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating makes this transistor suitable for various applications requiring higher voltages.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and temperature stability, making them ideal for a wide range of applications.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1 A, this transistor can handle moderate current loads with ease.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and allows for easy connection to external components.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NUS2501W6T1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT-IN BIAS RESISTOR RATIO IS 1

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

80

JESD-30 Code:

R-PDSO-G6

No. of Elements:

1

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NUS2501W6T1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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