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NUS2401SNT1

Onsemi

NUS2401SNT1 by Onsemi

NUS2401SNT1 by Onsemi is a Small Signal BJT with NPN/PNP polarity, 50V VCE, and 0.2A IC. It's used for switching applications in complex configurations. The package is surface mountable with Gull Wing terminals and a max power dissipation of 0.35W.

Median Price

$0.238

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 5,990 parts In-Stock

1+ parts

-

100+ parts

$0.238

1k+ parts

$0.197

10k+ parts

$0.176

5,990

-

$0.238

$0.197

$0.176

DigiKey

USA . 5,990 parts In-Stock

1+ parts

-

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$0.300

5,990

-

-

-

$0.300

Verical

USA . 3,000 parts In-Stock

1+ parts

-

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$0.220

3,000

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-

$0.220

Distributors (In-Stock)

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Digiode

USA . 2,033 parts In-Stock

1+ parts

$0.185

100+ parts

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2,033

$0.185

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Chip Stock

USA . 30,000 parts In-Stock

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30,000

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Vyrian

USA . 12,020 parts In-Stock

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12,020

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,613 parts In-Stock

1+ parts

$0.176

100+ parts

-

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1,613

$0.176

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Corohmni

South Africa . 309 parts In-Stock

1+ parts

$0.195

100+ parts

-

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309

$0.195

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AZTECH Wire

Italy . 349 parts In-Stock

1+ parts

$14.490

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349

$14.490

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Perfect Parts

USA . 23,770 parts In-Stock

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23,770

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RC Electronics

USA . 16,200 parts In-Stock

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16,200

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Continental Prestige Electronics

USA . 5,990 parts In-Stock

1+ parts

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$0.182

10k+ parts

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5,990

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$0.182

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TANS Electronics

Latvia . 4,542 parts In-Stock

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4,542

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SupplyDigital Components

Austria . 3,679 parts In-Stock

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3,679

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Kulean Microsystems

USA . 2,667 parts In-Stock

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2,667

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A-Z Elektronik GmbH

Germany . 1,800 parts In-Stock

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1,800

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Problanco Electronics

Mexico . 1,247 parts In-Stock

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1,247

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UHIMA Technologies

Türkiye . 354 parts In-Stock

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354

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Overview

Enhance your electronic projects with the NUS2401SNT1 Small Signal Bipolar Junction Transistor by Onsemi. Known for its high-quality manufacturing and versatile applications in switching, this complex NPN and PNP transistor offers customers exceptional value and performance. With a maximum collector-emitter voltage of 50V and a minimum DC current gain of 150, this surface-mount device is perfect for a wide range of applications. Experience the benefits of reliable functionality and efficiency with the NUS2401SNT1 from Onsemi.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides insulation and protection for the transistor, making it suitable for a variety of different applications.

Polarity or Channel Type: NPN AND PNP

This dual polarity allows for versatility in circuit design and compatibility with different types of systems.

Configuration: COMPLEX

The complex configuration indicates that this transistor is designed for more advanced and specialized applications, offering enhanced performance.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient and reliable operation in electronic circuits.

Surface Mount: YES

Enables easy and convenient placement on PCBs, saving space and simplifying the manufacturing process.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient placement and soldering on PCBs, optimizing space utilization.

No. of Elements: 3

The three elements indicate a more complex and versatile design, offering enhanced functionality compared to single-element transistors.

No. of Terminals: 6

The six terminals enable versatile connectivity options and support more complex circuit configurations.

Maximum Power Dissipation: 0.35 W

With a high maximum power dissipation, this transistor can handle more demanding tasks without overheating.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the PCB and allows for high-density mounting of components.

Minimum DC Current Gain (hFE): 150

The high minimum DC current gain ensures reliable and consistent amplification of signals in various applications.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage allows for operation in a wide range of voltage levels, increasing the transistor's versatility.

Transistor Element Material: SILICON

Silicon is a common and reliable semiconductor material, offering stable performance and durability in different operating conditions.

Maximum Collector Current (IC): 0.2 A

The high maximum collector current rating indicates that this transistor can handle relatively high levels of current, making it suitable for various applications.

Terminal Finish: TIN LEAD

The tin lead finish provides good solderability and ensures a stable connection with the PCB, enhancing the reliability of the transistor.

Terminal Position: DUAL

The dual terminal position offers more flexibility in circuit design and allows for easy connection to other components.

Peak Reflow Temperature °C: 235

The high peak reflow temperature ensures that the solder joints remain intact during the manufacturing process, preventing potential damage to the transistor.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NUS2401SNT1 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Additional Features:

BUILT IN BIAS RESISTORS

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

150

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e0

No. of Elements:

3

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NUS2401SNT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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