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MAT14ARZ-RL

Analog Devices

MAT14ARZ-RL by Analog Devices

MAT14ARZ-RL by Analog Devices is a NPN BJT transistor with 200 min hFE, 40V VCEO, and 300MHz fT. Ideal for amplifier applications, it features a small outline package with Gull Wing terminals and operates up to 150°C.

Median Price

$7.298

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 2,500 parts In-Stock

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$7.298

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$7.298

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Digiode

USA . 131 parts In-Stock

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$11.942

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$11.942

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Chip Stock

USA . 11,500 parts In-Stock

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11,500

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Vyrian

USA . 5,862 parts In-Stock

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Nova Conductors

Japan . 19 parts In-Stock

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Parana Technologies

USA . 21,262 parts In-Stock

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$1.160

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$1.079

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Advanced Electronics

New Zealand . 270 parts In-Stock

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$1.219

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$1.109

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$1.000

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$1.219

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IDEA Electronic Components Group

UK . 1,197 parts In-Stock

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$1.247

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$1.185

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$1.247

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DigiPath Technology Company

USA . 2,169 parts In-Stock

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$1.945

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$1.868

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Ampacity Inc.

Singapore . 3,524 parts In-Stock

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$7.160

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Semicontronic

India . 3,306 parts In-Stock

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$7.160

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$6.981

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$6.945

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$6.945

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AZTECH Wire

Italy . 1,065 parts In-Stock

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$10.780

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Corphita

USA . 685 parts In-Stock

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Kepictronics

USA . 5,493 parts In-Stock

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Microchip USA

USA . 4,118 parts In-Stock

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Authorized Procurement Solutions

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Lixinc

USA . 945 parts In-Stock

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Bastille Electronics

Australia . 62 parts In-Stock

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Overview

Elevate your electronics projects with the Analog Devices MAT14ARZ-RL, a top-tier Small Signal Bipolar Junction Transistor. Manufactured by industry leader Analog Devices, this NPN transistor offers unparalleled quality and reliability. Perfect for amplifier applications, this complex transistor boasts 4 elements and 14 terminals in a sleek small outline package. With a minimum DC current gain of 200 and a maximum operating temperature of 150°C, the MAT14ARZ-RL delivers exceptional performance. Trust Analog Devices to provide cutting-edge technology that exceeds expectations and elevates your designs to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor.

Polarity or Channel Type: NPN

Commonly used for amplification in electronic circuits.

Configuration: COMPLEX

Allows for versatile usage in various circuit designs.

Transistor Application: AMPLIFIER

Specifically designed for amplification applications.

Surface Mount: YES

Enables easy and efficient mounting on circuit boards.

Package Shape: RECTANGULAR

Space-efficient design for compact circuits.

Terminal Form: GULL WING

Facilitates secure soldering and connection.

No. of Elements: 4

Allows for multiple functions or features in a single component.

No. of Terminals: 14

Provides ample connection points for versatile circuit integration.

Package Style (Meter): SMALL OUTLINE

Ideal for miniaturized electronic devices.

Minimum DC Current Gain (hFE): 200

Ensures consistent amplification performance.

Maximum Operating Temperature: 150 °C

Can withstand high temperatures for reliable operation.

Maximum Collector-Emitter Voltage: 40 V

Suitable for a wide range of voltage requirements.

Transistor Element Material: SILICON

Known for its high efficiency and reliability in semiconductor devices.

Maximum Collector Current (IC): 0.03 A

Capable of handling moderate current loads in amplification circuits.

Terminal Finish: Matte Tin (Sn) - annealed

Ensures secure and durable connections.

Terminal Position: DUAL

Provides flexibility for circuit layout and connections.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient and safe soldering during assembly.

Peak Reflow Temperature °C: 260

Meets industry standards for lead-free soldering processes.

Nominal Transition Frequency (fT): 300 MHz

Suitable for high-frequency applications requiring fast signal switching.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT14ARZ-RL attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

MS-012AB

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

4

No. of Terminals:

14

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MAT14ARZ-RL Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

Category top products 20

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