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MAT12

Analog Devices

MAT12 by Analog Devices

MAT12 by Analog Devices is a NPN BJT with 2 elements and built-in diode. It has a DC current gain of 500, operates up to 150 °C, and supports a collector-emitter voltage of 40V. Ideal for amplifier applications due to its high transition frequency of 200MHz in a cylindrical package with isolated case connection.

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Vyrian

USA . 7,609 parts In-Stock

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Sunrise Surplus Inc.

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NAC Semi

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Electronic Expediters

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Digiode

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Mil-Aero Solutions, Inc.

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Prism Electronics

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Resion

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Parana Technologies

USA . 20,751 parts In-Stock

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$0.682

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$0.634

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IDEA Electronic Components Group

UK . 314 parts In-Stock

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Aztec Data Supply Inc.

USA . 10 parts In-Stock

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$1.021

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DigiPath Technology Company

USA . 1,471 parts In-Stock

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AZTECH Wire

Italy . 292 parts In-Stock

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One Stop Electronics

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Semicontronic

India . 238 parts In-Stock

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Corphita

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A-Plus Industry Inc.

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Overview

Elevate your amplifier design with the MAT12 by Analog Devices, a high-quality small signal bipolar junction transistor that offers exceptional performance and reliability. Manufactured by industry leader Analog Devices, this NPN transistor features separate elements with a built-in diode, making it perfect for amplifier applications. With a minimum DC current gain of 500 and a maximum operating temperature of 150 °C, the MAT12 delivers superior functionality and efficiency. Trust Analog Devices to provide you with innovative solutions that exceed your expectations.

Feature Benefit Bullets

Package Body Material: METAL

Metal packages provide better heat dissipation and mechanical strength, increasing the reliability and durability of the transistor.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifiers and switching circuits, making this transistor ideal for such applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in amplification tasks.

No. of Elements: 2

Having 2 elements increases the versatility and functionality of the transistor, allowing for more complex circuit designs.

Minimum DC Current Gain (hFE): 500

A high minimum DC current gain ensures consistent and reliable amplification in a variety of circuit configurations.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating allows for use in a wide range of voltage applications, providing flexibility in circuit design.

Maximum Collector Current (IC): 0.02 A

With a maximum collector current of 0.02 A, this transistor can handle moderate current loads, suitable for many amplifier and switching applications.

Nominal Transition Frequency (fT): 200 MHz

The high nominal transition frequency enables this transistor to operate effectively in high-frequency applications, such as RF amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MAT12 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Analog Devices

Specs

Additional Features:

LOW NOISE

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Minimum DC Current Gain (hFE):

500

JEDEC-95 Code:

TO-78

JESD-30 Code:

O-MBCY-W6

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MAT12 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Analog Devices

Analog Devices Inc. (ADI) is one of the leading companies in the areas of integrated circuit (IC) design, manufacturing, testing, and marketing. ADI is known for their high-performance semiconductor solutions which enable customers to create innovative systems that solve critical challenges. The company has over 40 years of experience in the industry and has been consistently recognized as an industry leader for its innovation as well as its commitment to quality products and services. They have garnered numerous awards throughout the years including awards from Gartner Magic Quadrant for Industrial IoT Platforms; Frost & Sullivan’s Global Product Leadership Award; and various awards relating to automotive safety technology such as JESD209-3 Automotive Grade Certifications from AEC-Q100.

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Management team

CEO

Vincent Roche

Interim CFO

James Mollica

CAO

Michael Sondel

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Limerick Fab

Fabrication

Fab Initiation

1977

Ireland

Limerick

Wafer Capacity

30,000

1977

30,000

Hillview Fab

Fabrication

Fab Initiation

2001

USA

Milpitas

Wafer Capacity

15,000

2001

15,000

Wilmington Fab

Fabrication

Fab Initiation

1967

USA

Wilmington

Wafer Capacity

50,000

1967

50,000

Camas Fab

Fabrication

Fab Initiation

1997

USA

Camas

Wafer Capacity

18,000

1997

18,000

Beaverton-Portland

Fabrication

Fab Initiation

1987

USA

Beaverton

Wafer Capacity

14,000

1987

14,000

Category top products 20

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