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BA12003DF-ZE2

ROHM

BA12003DF-ZE2 by ROHM

ROHM's BA12003DF-ZE2 is a NPN BJT transistor with 1000 min hFE, 60V max VCE, and 0.5A max IC. Ideal for switching applications in small outline packages, featuring GULL WING terminals and SILICON material.

Median Price

$1.040

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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DigiKey

USA . 244 parts In-Stock

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$1.040

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$0.600

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Mouser Electronics

USA . 140 parts In-Stock

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$1.180

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$0.757

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$0.525

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$0.448

140

$1.180

$0.757

$0.525

$0.448

Verical

USA . 2,500 parts In-Stock

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$0.665

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$0.645

2,500

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$0.645

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Vyrian

USA . 3,090 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 1,381 parts In-Stock

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VNN

France . 874 parts In-Stock

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Nova Conductors

Japan . 500 parts In-Stock

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Ampacity Inc.

Singapore . 241 parts In-Stock

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$0.710

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CoreStaff

Japan . 1,240 parts In-Stock

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$0.925

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$0.401

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$0.354

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1,240

$0.925

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Authorized Procurement Solutions

USA . 9,000 parts In-Stock

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Argo Parts USA

USA . 2,603 parts In-Stock

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Assy Fe

Spain . 2,500 parts In-Stock

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Continental Prestige Electronics

USA . 1,875 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Perfect Parts

USA . 93 parts In-Stock

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Overview

Unlock the power of innovation with the BA12003DF-ZE2 by ROHM. As a leading manufacturer in the industry, ROHM guarantees top-quality products that deliver exceptional performance. The Small Signal Bipolar Junction Transistor (BJT) category offers versatile applications like switching, making it a valuable addition to any project. With its NPN polarity and complex configuration, this transistor provides reliable operation and seamless integration. Trust ROHM's expertise and experience to bring you cutting-edge technology that exceeds expectations. Elevate your designs with the BA12003DF-ZE2 and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the transistor lightweight and durable, ensuring long-term reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, providing good performance and versatility.

Configuration: COMPLEX

The complex configuration allows for more precise control and functionality in switching applications, making it suitable for complex circuit designs.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and efficient performance in tasks that require rapid on/off switching.

Surface Mount: YES

Being surface-mountable, this transistor is easy to install on PCBs, saving space and reducing assembly time.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on a circuit board and optimal use of space.

Terminal Form: GULL WING

The gull wing terminal form provides secure and reliable connections during soldering, ensuring proper functioning of the transistor in various applications.

No. of Elements: 7

Having 7 elements allows for multiple transistor functions in a compact package, making it versatile for different circuit requirements.

No. of Terminals: 16

With 16 terminals, this transistor can accommodate complex circuit connections and configurations, making it suitable for advanced electronics projects.

Package Style (Meter): SMALL OUTLINE

The small outline package style minimizes the footprint of the transistor on the PCB, allowing for more compact and space-efficient designs.

Minimum DC Current Gain (hFE): 1000

A high minimum DC current gain of 1000 ensures consistent and reliable amplification of signals, making it ideal for applications requiring stable signal processing.

Maximum Collector-Emitter Voltage: 60 V

With a maximum collector-emitter voltage of 60V, this transistor can handle higher voltage applications, providing flexibility in circuit design and operation.

Transistor Element Material: SILICON

Silicon transistors offer high efficiency, low noise, and good temperature stability, ensuring optimal performance in a wide range of operating conditions.

Minimum Operating Temperature: -40 °C

The transistor can operate effectively in a wide temperature range, from -40°C, making it suitable for various environments and applications.

Maximum Collector Current (IC): 0.5 A

The maximum collector current of 0.5A allows the transistor to handle moderate power loads, making it suitable for low to medium power applications.

Terminal Position: DUAL

The dual terminal position provides flexibility in circuit connections and configurations, allowing for versatile use in different electronic designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BA12003DF-ZE2 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

1000

JESD-30 Code:

R-PDSO-G16

No. of Elements:

7

No. of Terminals:

16

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

BA12003DF-ZE2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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