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ULN2003AIDRG4

Texas Instruments

ULN2003AIDRG4 by Texas Instruments

ULN2003AIDRG4 by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and can handle a collector current of 0.5A. This complex transistor is ideal for switching applications, featuring surface mount capability in a small outline package shape.

Median Price

$0.380

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 15,250 parts In-Stock

1+ parts

$0.496

100+ parts

$0.382

1k+ parts

$0.201

10k+ parts

$0.201

15,250

$0.496

$0.382

$0.201

$0.201

Mouser Electronics

USA . 3,263 parts In-Stock

1+ parts

-

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-

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$0.263

3,263

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-

-

$0.263

Distributors (In-Stock)

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Nova Conductors

Japan . 37 parts In-Stock

1+ parts

$0.280

100+ parts

-

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37

$0.280

-

-

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Digiode

USA . 3,287 parts In-Stock

1+ parts

$0.471

100+ parts

-

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3,287

$0.471

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Chip Stock

USA . 102,120 parts In-Stock

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Vyrian

USA . 9,079 parts In-Stock

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9,079

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Bristol Electronics

USA . 1,160 parts In-Stock

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Sea View Technologies

USA . 44 parts In-Stock

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44

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Distributors (Availability)

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Semicontronic

India . 9,194 parts In-Stock

1+ parts

$0.224

100+ parts

$0.218

1k+ parts

$0.217

10k+ parts

-

9,194

$0.224

$0.218

$0.217

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Ampacity Inc.

Singapore . 9,186 parts In-Stock

1+ parts

$0.224

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9,186

$0.224

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Continental Prestige Electronics

USA . 2,381 parts In-Stock

1+ parts

$0.271

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$0.266

2,381

$0.271

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$0.266

Argo Parts USA

USA . 1,827 parts In-Stock

1+ parts

$0.271

100+ parts

-

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$0.263

1,827

$0.271

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$0.263

Aranea Global

USA . 1,000 parts In-Stock

1+ parts

$0.275

100+ parts

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1k+ parts

$0.264

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1,000

$0.275

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$0.264

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Corohmni

South Africa . 258 parts In-Stock

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$0.282

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258

$0.282

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Advanced Electronics

New Zealand . 150 parts In-Stock

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$0.290

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$0.276

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$0.276

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150

$0.290

$0.276

$0.276

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Corphita

USA . 3,891 parts In-Stock

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$0.446

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3,891

$0.446

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Parana Technologies

USA . 517 parts In-Stock

1+ parts

$0.700

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$1.736

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517

$0.700

-

$1.736

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DigiPath Technology Company

USA . 1,149 parts In-Stock

1+ parts

$0.771

100+ parts

$0.710

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1,149

$0.771

$0.710

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ChromeModa Solutions

Germany . 6,425 parts In-Stock

1+ parts

$0.787

100+ parts

$0.645

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-

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6,425

$0.787

$0.645

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IDEA Electronic Components Group

UK . 399 parts In-Stock

1+ parts

$0.787

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$0.708

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399

$0.787

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$0.708

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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10,000

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Lixinc

USA . 5,646 parts In-Stock

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5,646

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Microchip USA

USA . 1,173 parts In-Stock

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1,173

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Perfect Parts

USA . 125 parts In-Stock

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125

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Overview

Elevate your electronic projects with the ULN2003AIDRG4 by Texas Instruments, a top-quality small signal bipolar junction transistor that promises reliable performance and durability. Texas Instruments is a renowned manufacturer known for delivering cutting-edge technology, making this transistor a must-have for all your switching applications. With its compact design and advanced features, this complex configuration transistor offers unmatched value and benefits to customers seeking precision and efficiency in their projects. Upgrade your circuits today with the ULN2003AIDRG4 and experience the difference Texas Instruments brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material makes the transistor lightweight and durable, making it easy to handle and use in various applications.

Polarity or Channel Type: NPN

The NPN polarity makes this transistor suitable for use in amplification and switching applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides efficient and reliable performance in electronic circuits that require rapid on/off switching.

Surface Mount: YES

Being surface mountable allows for easy and efficient mounting on circuit boards, saving space and simplifying the assembly process.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, this transistor can handle higher voltage applications with ease.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) ULN2003AIDRG4 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Texas Instruments

Specs

Additional Features:

LOGIC LEVEL COMPATIBLE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

JEDEC-95 Code:

MS-012AC

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

7

No. of Terminals:

16

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

ULN2003AIDRG4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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