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BC847B,215

NXP Semiconductors

BC847B,215 by NXP Semiconductors

NXP Semiconductors' BC847B,215 is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V, hFE of 200, and can handle a max IC of 0.1A. With a package style of small outline and peak reflow temperature of 260°C, it's ideal for compact electronic devices requiring high-speed switching capabilities.

Median Price

$0.041

Lifecycle Status

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52

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1k+

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Mouser Electronics

USA . 96 parts In-Stock

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$0.190

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$0.043

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$0.026

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$0.022

96

$0.190

$0.043

$0.026

$0.022

Newark

USA . 2,331 parts In-Stock

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$0.207

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$0.079

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EBV Elektronik

Germany . 14,187,000 parts In-Stock

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Arrow

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Rochester

USA . 3,706,000 parts In-Stock

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Verical

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Farnell

UK . 105,065 parts In-Stock

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Element14

Singapore . 99,874 parts In-Stock

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UK . 96,000 parts In-Stock

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Digiode

USA . 4,120 parts In-Stock

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Maritex

Poland . 953 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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TME

Poland . 187,590 parts In-Stock

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Ozdisan Elektronik

Türkiye . 209 parts In-Stock

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IBS Electronics

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Sensible Micro Corp

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NAC Semi

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Magnum Semiconductors LLP

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Micros sp.j. W. Kędra i J. Lic

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Rebound Electronics

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PC Components Company LLC

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Component Sense

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Semicontronic

India . 7,868,441 parts In-Stock

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Corphita

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AZTECH Wire

Italy . 7,221 parts In-Stock

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Argo Parts USA

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Netroflash

USA . 1,000 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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Modulus Dynamics

Lithuania . 13,190 parts In-Stock

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Aztec Data Supply Inc.

USA . 375 parts In-Stock

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Perfect Parts

USA . 32,631,659 parts In-Stock

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Eastek

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Continental Prestige Electronics

USA . 766,225 parts In-Stock

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Infinite Electronics LLP (Excess)

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iodParts Technologies Inc.

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Lucentia Tech

USA . 66,162 parts In-Stock

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Authorized Procurement Solutions

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Futuretech Components

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Brazil . 22,054 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the BC847B,215 by NXP Semiconductors. Crafted by a trusted manufacturer, this Small Signal Bipolar Junction Transistor offers reliability and efficiency. Ideal for switching applications, this NPN transistor provides a maximum VCEsat of 0.6V and a minimum DC current gain of 200. With a maximum operating temperature of 150°C and peak reflow temperature of 260°C, this transistor ensures durability and stability. Upgrade your electronics with the BC847B,215 for seamless functionality and enhanced performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material ensures durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for easy integration with other NPN components in a circuit, providing flexibility in design and functionality.

Configuration: SINGLE

Single configuration simplifies circuit design and troubleshooting, making the transistor user-friendly for both DIY enthusiasts and professionals.

Transistor Application: SWITCHING

Designed for switching applications, this transistor offers fast response times and efficient performance in turning on and off electrical signals.

Surface Mount: YES

Surface mount capability enables easy and secure placement on circuit boards, saving space and ensuring reliable connections.

Maximum VCEsat: 0.6 V

Low VCEsat voltage results in minimal power loss and heat generation, enhancing the efficiency of the transistor in various applications.

Package Shape: RECTANGULAR

Rectangular package shape provides easy handling and placement, contributing to the overall user-friendly design of the transistor.

Terminal Form: GULL WING

Gull wing terminal form ensures secure and reliable connection on circuit boards, reducing the risk of signal loss or damage during operation.

No. of Terminals: 3

With three terminals, the transistor offers versatility in circuit design and connection options, enabling various configurations for different applications.

Maximum Power Dissipation (Abs): 0.3 W

Low power dissipation rating allows for efficient energy usage and heat management, ensuring the longevity and reliability of the transistor.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on circuit boards, making it an ideal choice for compact electronic designs and applications with limited space.

Minimum DC Current Gain (hFE): 200

High DC current gain ensures reliable amplification of signals, making the transistor suitable for a wide range of applications where signal strength is critical.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range enables the transistor to perform reliably in harsh environmental conditions without compromising its functionality.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating allows the transistor to handle higher voltage levels, making it suitable for applications requiring robust performance and signal control.

Transistor Element Material: SILICON

Silicon material offers excellent performance and durability, ensuring long-term reliability and stability in various operating conditions.

Maximum Collector Current (IC): 0.1 A

With a high collector current rating, the transistor can handle greater load currents, making it suitable for applications that require high-power output.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and corrosion resistance, ensuring reliable signal transmission and longevity of the transistor.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connections and configurations, allowing for easy integration into various electronic setups.

Case Connection: COLLECTOR

Collector case connection simplifies circuit design and ensures proper signal flow, enhancing the overall performance and reliability of the transistor.

Maximum Time At Peak Reflow Temperature (s): 30

Short reflow time allows for quick and efficient soldering of the transistor onto circuit boards, reducing production time and costs for electronic manufacturers.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper soldering and bonding of the transistor on circuit boards, providing secure connections and reliable performance in various operating conditions.

Reference Standard: IEC-60134

Compliance with IEC standards ensures the quality and reliability of the transistor, meeting industry requirements and standards for electronic components.

Nominal Transition Frequency (fT): 100 MHz

High nominal transition frequency enables fast switching speeds and signal processing, making the transistor suitable for high-frequency applications and data transmission.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC847B,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

IEC-60134

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.6 V

Trade Compliance

BC847B,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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