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BC807-40LT3G

Onsemi

BC807-40LT3G by Onsemi

BC807-40LT3G by Onsemi is a PNP small signal bipolar junction transistor (BJT) with a max VCEsat of 0.7V, making it suitable for switching applications. It has a max collector-emitter voltage of 45V and can handle a max collector current of 0.5A. This surface mount transistor operates in temperatures ranging from -55°C to 150°C.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 20,715 parts In-Stock

1+ parts

$0.117

100+ parts

$0.037

1k+ parts

$0.025

10k+ parts

$0.016

20,715

$0.117

$0.037

$0.025

$0.016

Arrow

USA . 315 parts In-Stock

1+ parts

$0.147

100+ parts

$0.059

1k+ parts

$0.031

10k+ parts

-

315

$0.147

$0.059

$0.031

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Newark

USA . 34,002 parts In-Stock

1+ parts

$0.166

100+ parts

$0.065

1k+ parts

$0.044

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-

34,002

$0.166

$0.065

$0.044

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DigiKey

USA . 6,985 parts In-Stock

1+ parts

$0.170

100+ parts

$0.063

1k+ parts

$0.040

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$0.030

6,985

$0.170

$0.063

$0.040

$0.030

Mouser Electronics

USA . 29,350 parts In-Stock

1+ parts

$0.190

100+ parts

$0.069

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$0.043

10k+ parts

$0.037

29,350

$0.190

$0.069

$0.043

$0.037

Element14

Singapore . 3,108 parts In-Stock

1+ parts

$0.231

100+ parts

$0.073

1k+ parts

$0.049

10k+ parts

$0.033

3,108

$0.231

$0.073

$0.049

$0.033

Adafruit Industries

USA . 750 parts In-Stock

1+ parts

$1.994

100+ parts

$1.894

1k+ parts

$1.894

10k+ parts

-

750

$1.994

$1.894

$1.894

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Future Electronics

Canada . 750,000 parts In-Stock

1+ parts

-

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-

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$0.015

750,000

-

-

-

$0.015

Flip Electronics (Authorized)

USA . 69,930 parts In-Stock

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-

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69,930

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Rochester

USA . 10,000 parts In-Stock

1+ parts

-

100+ parts

$0.030

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$0.025

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$0.023

10,000

-

$0.030

$0.025

$0.023

Chip1Stop

Japan . 9,200 parts In-Stock

1+ parts

-

100+ parts

$0.016

1k+ parts

$0.016

10k+ parts

$0.015

9,200

-

$0.016

$0.016

$0.015

Verical

USA . 8,415 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.041

10k+ parts

$0.026

8,415

-

-

$0.041

$0.026

RS (Exports)

UK . 6,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.037

10k+ parts

$0.029

6,500

-

-

$0.037

$0.029

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 1,392 parts In-Stock

1+ parts

$0.024

100+ parts

-

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1,392

$0.024

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-

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Nova Conductors

Japan . 58 parts In-Stock

1+ parts

$0.044

100+ parts

-

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58

$0.044

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-

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IBS Electronics

USA . 1,570,000 parts In-Stock

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$0.026

1,570,000

-

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-

$0.026

Chip Stock

USA . 916,340 parts In-Stock

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916,340

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NAC Semi

USA . 600,000 parts In-Stock

1+ parts

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$0.031

600,000

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$0.031

ComSIT Distribution GmbH

Germany . 220,000 parts In-Stock

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220,000

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Flip Electronics

USA . 69,930 parts In-Stock

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69,930

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Vyrian

USA . 37,885 parts In-Stock

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37,885

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VNN

France . 2,228 parts In-Stock

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2,228

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 42,552 parts In-Stock

1+ parts

$0.014

100+ parts

$0.014

1k+ parts

$0.014

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-

42,552

$0.014

$0.014

$0.014

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Ampacity Inc.

Singapore . 38,559 parts In-Stock

1+ parts

$0.014

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38,559

$0.014

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Corohmni

South Africa . 370 parts In-Stock

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$0.016

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370

$0.016

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Corphita

USA . 195 parts In-Stock

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$0.022

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195

$0.022

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Component Stockers USA

USA . 776,699 parts In-Stock

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$0.030

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$0.020

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$0.020

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$0.020

776,699

$0.030

$0.020

$0.020

$0.020

Argo Parts USA

USA . 216 parts In-Stock

1+ parts

$0.043

100+ parts

-

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$0.042

216

$0.043

-

-

$0.042

Modulus Dynamics

Lithuania . 750 parts In-Stock

1+ parts

$0.048

100+ parts

$0.047

1k+ parts

$0.046

10k+ parts

-

750

$0.048

$0.047

$0.046

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Aztec Data Supply Inc.

USA . 324 parts In-Stock

1+ parts

$0.971

100+ parts

-

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-

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324

$0.971

-

-

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Advanced Electronics

New Zealand . 750 parts In-Stock

1+ parts

$1.994

100+ parts

$1.894

1k+ parts

$1.894

10k+ parts

-

750

$1.994

$1.894

$1.894

-

Perfect Parts

USA . 4,537,911 parts In-Stock

1+ parts

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4,537,911

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Eastek

USA . 670,000 parts In-Stock

1+ parts

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$0.021

670,000

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$0.021

Authorized Procurement Solutions

USA . 660,000 parts In-Stock

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660,000

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Infinite Electronics LLP (Excess)

. 80,011 parts In-Stock

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80,011

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Kepictronics

USA . 40,000 parts In-Stock

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40,000

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Lixinc

USA . 13,335 parts In-Stock

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13,335

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GreenTree Electronics

Israel . 10,000 parts In-Stock

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10,000

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Allen Electronics Distributors

USA . 6,500 parts In-Stock

1+ parts

-

100+ parts

$0.029

1k+ parts

$0.026

10k+ parts

$0.022

6,500

-

$0.029

$0.026

$0.022

Problanco Electronics

Mexico . 6,089 parts In-Stock

1+ parts

-

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6,089

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Kulean Microsystems

USA . 5,499 parts In-Stock

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SupplyDigital Components

Austria . 5,492 parts In-Stock

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5,492

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Robosynatics

Brazil . 5,000 parts In-Stock

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Lucentia Tech

USA . 5,000 parts In-Stock

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Glotronic Ltd.

UK . 3,700 parts In-Stock

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3,700

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TANS Electronics

Latvia . 2,833 parts In-Stock

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2,833

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UHIMA Technologies

Türkiye . 506 parts In-Stock

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506

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Netroflash

USA . 100 parts In-Stock

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$0.043

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$0.042

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$0.041

100

-

$0.043

$0.042

$0.041

Continental Prestige Electronics

USA . 15 parts In-Stock

1+ parts

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100+ parts

$0.049

1k+ parts

$0.029

10k+ parts

$0.021

15

-

$0.049

$0.029

$0.021

Overview

Experience the cutting-edge technology and superior quality of the BC807-40LT3G by Onsemi. This Small Signal Bipolar Junction Transistor (BJT) offers unmatched performance and reliability for various applications. With its PNP polarity and switching capability, it provides seamless functionality in a compact, surface-mount package. Benefit from its low VCEsat, high power dissipation, and wide operating temperature range. Whether you're designing circuits for automotive, industrial, or consumer electronics, this product delivers exceptional value and efficiency. Trust Onsemi, a renowned manufacturer, to provide you with the best-in-class transistors that excel in performance, durability, and versatility. Upgrade your designs today with the BC807-40LT3G and experience the difference.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This product is made of a durable plastic/epoxy material, providing excellent protection and reliability for the transistor.

Polarity or Channel Type: PNP

The PNP configuration allows for efficient current flow and is ideal for applications that require switching capabilities.

Configuration: SINGLE

With a single transistor configuration, this product is easy to integrate into circuits and offers simplicity in design.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor provides fast and reliable switching performance.

Surface Mount: YES

The surface mount feature allows for easy and convenient installation, making this product suitable for compact and densely populated circuit boards.

Maximum VCEsat: 0.7 V

With a low maximum collector-emitter saturation voltage, this transistor minimizes power losses and offers efficient operation.

Package Shape: RECTANGULAR

The rectangular package shape provides compatibility with standard layouts and ensures easy placement on a circuit board.

Terminal Form: GULL WING

The gull wing terminal form allows for reliable soldering and improves overall mechanical strength and stability.

No. of Elements: 1

This transistor consists of a single element, simplifying the circuit design and reducing complexity.

No. of Terminals: 3

The three terminals provide necessary connections for efficient operation and easy integration into electronic circuits.

Maximum Power Dissipation (Abs): 0.3 W

With a maximum power dissipation of 0.3 W, this transistor can handle moderate power requirements while maintaining reliable performance.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for space-saving installation, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 250

With a minimum DC current gain of 250, this transistor provides amplification capability and improves circuit performance.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature ensures the transistor's reliability even in demanding environments.

Maximum Collector-Emitter Voltage: 45 V

With a high maximum collector-emitter voltage, this transistor can handle higher voltage applications with ease.

Transistor Element Material: SILICON

Made of silicon, this transistor offers excellent electrical characteristics, stability, and high temperature resistance.

Minimum Operating Temperature: -55 °C

The low minimum operating temperature ensures the transistor's functionality in extreme cold environments.

Maximum Collector Current (IC): 0.5 A

With a maximum collector current of 0.5 A, this transistor can handle moderate current requirements.

Terminal Finish: Matte Tin (Sn) - annealed

The matte tin finish on the terminals provides excellent solderability and ensures long-term connection reliability.

Terminal Position: DUAL

The dual terminal position allows for flexible and convenient connections in various circuit configurations.

Moisture Sensitivity Level (MSL): 1

With a moisture sensitivity level of 1, this transistor has excellent resistance to moisture and is suitable for a wide range of environments.

Maximum Time At Peak Reflow Temperature (s): 40

This transistor can withstand higher reflow temperatures for up to 40 seconds, ensuring reliable soldering and hassle-free assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature capability ensures efficient and reliable soldering during the manufacturing process.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor offers excellent high-frequency performance, making it suitable for RF applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC807-40LT3G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

250

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC807-40LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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