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PIMN31,115

NXP Semiconductors

PIMN31,115 by NXP Semiconductors

PIMN31,115 by NXP Semiconductors is a NPN BJT transistor with 2 elements and built-in resistor. It has a max collector-emitter voltage of 50V, max power dissipation of 0.42W, and operates at temperatures up to 150°C. Ideal for switching applications in small outline packages with gull wing terminals.

Median Price

$0.126

Lifecycle Status

Suppliers In-Stock

21

In-Stock Inventory

1k+

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Element14

Singapore . 11,865 parts In-Stock

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$0.692

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$0.224

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$0.172

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$0.134

11,865

$0.692

$0.224

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$0.134

Mouser Electronics

USA . 1,345 parts In-Stock

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$0.770

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$0.337

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$0.154

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$0.137

1,345

$0.770

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$0.137

Newark

USA . 5,495 parts In-Stock

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$0.911

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$0.352

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$0.911

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Elektronika Sales Private Limited

India . 24,000 parts In-Stock

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Chip1Stop

Japan . 15,000 parts In-Stock

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Farnell

UK . 12,785 parts In-Stock

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$0.124

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$0.079

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$0.068

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TTI

USA . 12,000 parts In-Stock

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Future Electronics

Canada . 6,000 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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Verical

USA . 3,000 parts In-Stock

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$0.128

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Rochester

USA . 25 parts In-Stock

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Distributors (In-Stock)

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Digiode

USA . 599 parts In-Stock

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$0.069

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Nova Conductors

Japan . 33 parts In-Stock

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Chip Stock

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NAC Semi

USA . 6,000 parts In-Stock

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Vyrian

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LIBRA Elektronik GmbH

Germany . 2,700 parts In-Stock

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ComSIT Distribution GmbH

Germany . 2,141 parts In-Stock

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Anansix

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Semi Source

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Gateway Electronic Components

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Semicontronic

India . 17,410 parts In-Stock

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$0.058

100+ parts

$0.057

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$0.056

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Corphita

USA . 1,204 parts In-Stock

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Component Stockers USA

USA . 59,342 parts In-Stock

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$0.160

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$0.100

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$0.080

Argo Parts USA

USA . 3,026 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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AZTECH Wire

Italy . 14,159 parts In-Stock

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Advanced Electronics

New Zealand . 29 parts In-Stock

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Corohmni

South Africa . 881 parts In-Stock

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Aztec Data Supply Inc.

USA . 594 parts In-Stock

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Infinite Electronics LLP (Excess)

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Perfect Parts

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Robosynatics

Brazil . 3,336 parts In-Stock

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$1.561

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$1.529

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$1.529

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$1.529

Lucentia Tech

USA . 3,336 parts In-Stock

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$1.561

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$1.529

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iodParts Technologies Inc.

India . 3,135 parts In-Stock

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Eastek

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UNI Independent Distributors

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Supply Digital

USA . 2,475 parts In-Stock

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Authorized Procurement Solutions

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Continental Prestige Electronics

USA . 80 parts In-Stock

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$0.088

80

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Overview

Discover the power of innovation with the NXP Semiconductors PIMN31,115 Small Signal Bipolar Junction Transistor. This high-quality product offers seamless switching capabilities and comes in a convenient surface-mount package. With its built-in resistor and superior performance, this transistor is perfect for a wide range of applications. Trust in NXP Semiconductors for reliable technology that delivers exceptional value and efficiency to your projects. Experience the difference with the PIMN31,115 and take your designs to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

Commonly used for amplification and switching applications due to its positive-negative-positive configuration.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

Offers flexibility in circuit design and helps in reducing external components, simplifying the overall design.

Transistor Application: SWITCHING

Designed specifically for switching applications, providing fast response times and efficient performance.

Surface Mount: YES

Allows for easy and convenient mounting on circuit boards, saving space and reducing assembly time.

Maximum Operating Temperature: 150 °C

Can operate effectively in a variety of environmental conditions without overheating or malfunctioning.

Minimum DC Current Gain (hFE): 70

Ensures reliable and consistent amplification of signals in the circuit.

Maximum Collector-Emitter Voltage: 50 V

Provides a high voltage tolerance, making it suitable for applications with varying voltage levels.

Maximum Collector Current (IC): 0.5 A

Capable of handling moderate current levels, making it suitable for a wide range of switching applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PIMN31,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

70

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

BIP General Purpose Small Signal

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PIMN31,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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