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MBT35200MT1G

Onsemi

MBT35200MT1G by Onsemi

MBT35200MT1G by Onsemi is a PNP BJT transistor with 6 terminals, capable of handling up to 2A collector current. It has a min DC current gain of 100 and operates at a max temperature of 150°C. Ideal for switching applications due to its high transition frequency of 100MHz.

Median Price

$0.162

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Arrow

USA . 1,232 parts In-Stock

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Farnell

UK . 622,615 parts In-Stock

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$0.493

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$0.311

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$0.272

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DigiKey

USA . 525 parts In-Stock

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$0.770

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$0.308

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Rochester

USA . 613,862 parts In-Stock

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Verical

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Chip1Stop

Japan . 4,322 parts In-Stock

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Digiode

USA . 1,585 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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Flip Electronics

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Chip Stock

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Bristol Electronics

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IBS Electronics

USA . 11,900 parts In-Stock

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Cyclops Electronics Ltd

UK . 10,595 parts In-Stock

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Sea View Technologies

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Connector Distribution Corp

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Right Parts Inc.

USA . 6,150 parts In-Stock

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ComSIT Distribution GmbH

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Vyrian

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Dan-Mar Components

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ACDS - Activité Composants Distribution Service

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Prism Electronics

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Atlantic Semiconductor

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Corel Iberica Componentes, S.L.

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Component Stockers USA

USA . 660,055 parts In-Stock

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$0.100

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$0.100

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$0.130

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660,055

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$0.130

Corphita

USA . 1,143 parts In-Stock

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Corohmni

South Africa . 198 parts In-Stock

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Argo Parts USA

USA . 4,748 parts In-Stock

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Netroflash

USA . 100 parts In-Stock

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Ampacity Inc.

Singapore . 258,407 parts In-Stock

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Continental Prestige Electronics

USA . 622,619 parts In-Stock

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Aztec Data Supply Inc.

USA . 2,616 parts In-Stock

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Metaverse IC Inc.

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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Kulean Microsystems

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Problanco Electronics

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Authorized Procurement Solutions

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GreenTree Electronics

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Overview

Discover the power of the MBT35200MT1G by Onsemi, a high-quality Small Signal Bipolar Junction Transistor designed for switching applications. With a PNP polarity and single configuration, this transistor offers reliability and efficiency in various electronic circuits. Manufactured by Onsemi, known for their cutting-edge technology and superior products, the MBT35200MT1G provides customers with a durable and versatile solution for their projects. Whether you need to control currents or voltages, this transistor's high DC current gain and low power dissipation make it the ideal choice for your needs. Upgrade your designs with the MBT35200MT1G and experience the difference in performance and quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this product lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

The PNP configuration allows for efficient switching operations in electronic circuits, making this transistor suitable for switching applications.

Configuration: SINGLE

The single configuration simplifies the design and integration process, making it easy to work with in different projects.

Transistor Application: SWITCHING

Designed for switching applications, this transistor ensures reliable and fast switching performance.

Surface Mount: YES

The surface mount capability enables easy and secure mounting on circuit boards, saving space and improving heat dissipation.

Package Shape: RECTANGULAR

The rectangular shape of the package provides a compact form factor, allowing for easy integration in tight spaces.

Terminal Form: GULL WING

The gull wing terminal form offers secure connections and facilitates efficient soldering during assembly.

No. of Terminals: 6

With 6 terminals, this transistor provides versatility in circuit connections, allowing for different configurations based on requirements.

Maximum Power Dissipation (Abs): 1.75 W

The high maximum power dissipation of 1.75 W ensures the transistor can handle power spikes without overheating, improving overall reliability.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for easy handling and installation, making it suitable for compact designs.

Minimum DC Current Gain (hFE): 100

The minimum DC current gain of 100 ensures stable amplification, making this transistor ideal for signal amplification applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150°C, this transistor can withstand tough environmental conditions.

Maximum Collector-Emitter Voltage: 35 V

The high maximum collector-emitter voltage of 35 V allows for safe operation in various high voltage applications.

Transistor Element Material: SILICON

The use of silicon material in the transistor element ensures high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 2 A

The high maximum collector current of 2 A enables the transistor to handle high current loads with ease.

Terminal Finish: MATTE TIN

The matte tin terminal finish provides corrosion resistance and ensures reliable electrical connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit layouts, allowing for different connection options.

Maximum Time At Peak Reflow Temperature (s): 30

With a maximum time of 30 seconds at peak reflow temperature, this transistor is easy to solder during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures proper solder melting and joint formation during assembly.

Nominal Transition Frequency (fT): 100 MHz

The high nominal transition frequency of 100 MHz indicates fast switching speeds, making this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MBT35200MT1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

2 A

Maximum Collector-Emitter Voltage:

35 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

6

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MBT35200MT1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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