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NZT6715

Onsemi

NZT6715 by Onsemi

NZT6715 by Onsemi is a NPN BJT transistor with 1W power dissipation, hFE of 50, and 40V collector-emitter voltage. Ideal for switching applications, it has a max operating temperature of 150°C. With GULL WING terminals and matte tin finish, it's suitable for surface mount designs in various electronic circuits.

Median Price

$0.167

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

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Flip Electronics (Authorized)

USA . 4,000 parts In-Stock

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Rochester

USA . 356 parts In-Stock

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$0.167

1k+ parts

$0.139

10k+ parts

$0.123

356

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$0.167

$0.139

$0.123

Distributors (In-Stock)

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Digiode

USA . 2,828 parts In-Stock

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$0.134

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Vyrian

USA . 1,951 parts In-Stock

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$0.141

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$0.141

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Flip Electronics

USA . 4,000 parts In-Stock

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Bristol Electronics

USA . 3,375 parts In-Stock

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Atlantic Semiconductor

USA . 3,375 parts In-Stock

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Anansix

USA . 2,537 parts In-Stock

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Sensible Micro Corp

USA . 2,495 parts In-Stock

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Lighthouse Electronics, Inc.

USA . 116 parts In-Stock

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Distributors (Availability)

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Corphita

USA . 1,849 parts In-Stock

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$0.127

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$0.127

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Corohmni

South Africa . 389 parts In-Stock

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$0.141

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Aztec Data Supply Inc.

USA . 200 parts In-Stock

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$0.364

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$0.364

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Andel Nordic

Denmark . 1,807 parts In-Stock

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$7.023

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$6.743

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$6.743

1,807

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$6.743

Kepictronics

USA . 306,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

USA . 12,022 parts In-Stock

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Authorized Procurement Solutions

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SupplyDigital Components

Austria . 4,724 parts In-Stock

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Problanco Electronics

Mexico . 4,344 parts In-Stock

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TANS Electronics

Latvia . 4,130 parts In-Stock

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Kulean Microsystems

USA . 1,243 parts In-Stock

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Supply Digital

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UHIMA Technologies

Türkiye . 364 parts In-Stock

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364

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Overview

Unleash the power of innovation with the NZT6715 by Onsemi. Designed to deliver superior performance and reliability, this Small Signal Bipolar Junction Transistor (BJT) is a game-changer in the world of switching applications. With a maximum collector-emitter voltage of 40V and a maximum power dissipation of 1W, this NPN transistor offers unmatched efficiency and precision. Whether you're looking to optimize your electronic circuits or enhance your devices' functionality, the NZT6715 is the perfect solution. Trust in Onsemi's expertise and elevate your projects to new heights with this cutting-edge component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, ensuring durability and reliability.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, making this transistor versatile.

Configuration: SINGLE

Simplifies circuit design as only one transistor is needed for the application.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and reducing assembly time.

Maximum Collector-Emitter Voltage: 40 V

Suitable for applications requiring voltage levels up to 40V, making it compatible with a wide range of circuits.

Maximum Collector Current (IC): 1.5 A

Can handle high currents up to 1.5A, making it suitable for applications with moderate power requirements.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NZT6715 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NZT6715 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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