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NZT6729

Onsemi

NZT6729 by Onsemi

NZT6729 by Onsemi is a PNP BJT transistor with 1W power dissipation, hFE of 20, and max VCE of 80V. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.

Median Price

$1.216

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 497 parts In-Stock

1+ parts

$0.137

100+ parts

$0.128

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$0.116

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497

$0.137

$0.128

$0.116

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Adafruit Industries

USA . 2,000 parts In-Stock

1+ parts

$2.294

100+ parts

$2.088

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$1.881

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2,000

$2.294

$2.088

$1.881

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Flip Electronics (Authorized)

USA . 152 parts In-Stock

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152

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Digiode

USA . 1,825 parts In-Stock

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$0.130

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1,825

$0.130

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Vyrian

USA . 3,199 parts In-Stock

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$0.137

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$0.137

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Odintec Ltd.

Israel . 2,200 parts In-Stock

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2,200

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Anansix

USA . 1,163 parts In-Stock

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Flip Electronics

USA . 152 parts In-Stock

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152

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Distributors (Availability)

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Corphita

USA . 1,202 parts In-Stock

1+ parts

$0.123

100+ parts

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1,202

$0.123

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Corohmni

South Africa . 182 parts In-Stock

1+ parts

$0.137

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182

$0.137

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Advanced Electronics

New Zealand . 2,000 parts In-Stock

1+ parts

$2.294

100+ parts

$2.088

1k+ parts

$1.881

10k+ parts

-

2,000

$2.294

$2.088

$1.881

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Andel Nordic

Denmark . 977 parts In-Stock

1+ parts

$6.964

100+ parts

-

1k+ parts

$6.685

10k+ parts

$6.685

977

$6.964

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$6.685

$6.685

Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 24,385 parts In-Stock

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Perfect Parts

USA . 15,238 parts In-Stock

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Kulean Microsystems

USA . 8,032 parts In-Stock

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8,032

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TANS Electronics

Latvia . 7,791 parts In-Stock

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7,791

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SupplyDigital Components

Austria . 7,394 parts In-Stock

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7,394

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Problanco Electronics

Mexico . 6,955 parts In-Stock

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Microchip USA

USA . 5,680 parts In-Stock

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5,680

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Kepictronics

USA . 4,500 parts In-Stock

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4,500

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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Assy Fe

Spain . 2,300 parts In-Stock

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Supply Digital

USA . 715 parts In-Stock

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715

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UHIMA Technologies

Türkiye . 561 parts In-Stock

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561

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Overview

Enhance your electronic projects with the NZT6729 by Onsemi - a top-quality Small Signal Bipolar Junction Transistor that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this PNP transistor is perfect for switching applications. With its high power dissipation, low DC current gain, and excellent collector-emitter voltage, the NZT6729 delivers superior functionality. Whether you're a hobbyist or a professional, this transistor is a valuable addition to your toolkit, providing unparalleled efficiency and precision. Upgrade your circuits today with the NZT6729 and experience the difference in performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package lightweight and durable, suitable for various applications.

Polarity or Channel Type: PNP

PNP configuration allows for easy integration into circuits requiring PNP transistors.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity.

Transistor Application: SWITCHING

Designed specifically for switching applications, allowing for fast and efficient operation.

Surface Mount: YES

Surface mount capability makes it easy to mount on PCBs, saving space and simplifying assembly.

Package Shape: RECTANGULAR

Rectangular shape provides versatility in PCB layout and placement.

Terminal Form: GULL WING

Gull wing terminals offer strong connection points and ease of soldering during assembly.

No. of Terminals: 4

4 terminals provide necessary connectivity for the transistor to function effectively.

Maximum Power Dissipation (Abs): 1 W

1W power dissipation allows for reliable operation without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package saves space on PCB and allows for compact circuit designs.

Minimum DC Current Gain (hFE): 20

Minimum DC current gain of 20 ensures consistent and stable performance.

Maximum Operating Temperature: 150 °C

Operating temperature up to 150 °C enables use in a wide range of environments.

Maximum Collector-Emitter Voltage: 80 V

High collector-emitter voltage rating of 80V allows for handling of higher voltages.

Transistor Element Material: SILICON

Silicon material provides reliability and efficiency in transistor operation.

Maximum Collector Current (IC): 1 A

Maximum collector current of 1A enables handling of moderate current loads.

Terminal Finish: MATTE TIN

Matte tin finish provides a good solderable surface for reliable connections.

Terminal Position: DUAL

Dual terminal position allows for secure and stable mounting on PCBs.

Case Connection: COLLECTOR

Case connection at the collector terminal ensures proper grounding and thermal dissipation.

Maximum Time At Peak Reflow Temperature (s): 30

30 seconds at peak reflow temperature ensures proper soldering and reliability in assembly.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260 °C ensures proper soldering and reliability in assembly processes.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NZT6729 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

20

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NZT6729 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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