Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
Add filters
All
Selected
2SA1575E-TD-E
Onsemi
Onsemi's 2SA1575E-TD-E is a PNP Darlington transistor with max VCEsat of 1V, hFE of 100, and fT of 400MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Suitable for surface mount designs with small outline package style.
COLLECTOR
.1 A
2.3 pF
200 V
DARLINGTON
100
R-PSSO-F3
e6
1
3
150 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
PNP
.5 W
1.3 W
YES
Tin/Bismuth (Sn/Bi)
FLAT
SINGLE
AMPLIFIER
SILICON
400 MHz
1 V
BCV46QTA
Diodes Incorporated
PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A;
HIGH RELIABILITY
.5 A
60 V
2000
R-PDSO-G3
e3
260
.35 W
AEC-Q101
Other Transistors
MATTE TIN
GULL WING
DUAL
30
200 MHz
BCV48E6327HTSA1
Infineon Technologies
PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
Not Qualified
BCV26E6327HTSA1
BCV26E6327HTSA1 by Infineon Technologies is a PNP Darlington transistor with a min DC current gain of 4000 and max collector-emitter voltage of 30V. It operates at up to 150°C, making it suitable for high-temperature applications in small outline packages. With a nominal transition frequency of 200MHz, it is ideal for high-frequency amplification needs.
30 V
4000
TIN
BCV27E6327HTSA1
BCV27E6327HTSA1 by Infineon Technologies is a NPN Darlington transistor with 4000 min hFE, 30V VCEO, and 170MHz fT. Ideal for small signal applications in electronics due to its high DC current gain and low power dissipation of 0.36W. Suitable for surface mount designs with a compact rectangular package style.
NPN
.36 W
170 MHz
BCP49E6327HTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
R-PDSO-G4
4
BCV29E6327HTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
NOT SPECIFIED
150 MHz
BCV47E6433HTMA1
BCV47E6433HTMA1 by Infineon is a NPN Darlington BJT with 2000 hFE, 60V VCE, and 170MHz fT. Ideal for applications requiring high current gain and voltage amplification in compact electronic devices due to its small outline package and surface mount capability.
BCV49E6327HTSA1
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Transistor Element Material: SILICON;
BCX38CSTOB
Zetex Plc
BCX38CSTOB by Zetex Plc is a NPN Darlington transistor with max VCEsat of 1.25V, hFE of 10000, and IC of 0.8A. Ideal for switching applications due to its high current gain and low saturation voltage. This rectangular plastic transistor operates up to 200°C making it suitable for various industrial uses.
.8 A
10000
R-PSIP-W3
200 Cel
IN-LINE
2 W
NO
WIRE
SWITCHING
1.25 V
ZXTN04120HP5TC
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): 1.5 A; JESD-609 Code: e3;
1.5 A
120 V
500
R-PDSO-F3
BC517,112
NXP Semiconductors
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 220 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
30000
TO-92
O-PBCY-T3
ROUND
CYLINDRICAL
.625 W
THROUGH-HOLE
BOTTOM
220 MHz
BC517,116
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 220 MHz; Maximum Collector Current (IC): .5 A; Maximum VCEsat: 1 V;
MMBTA28-13-F
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
125 MHz
MMBTA28-7
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 80 V;
80 V
e0
TIN LEAD
MMBTA13-7
NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .3 A;
.3 A
.3 W
MMBTA14-7
20000
MMBTA63-7
PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Package Style (Meter): SMALL OUTLINE;
MMBTA64-7
PNP; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;
MMST6427-7
NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Maximum Collector-Emitter Voltage: 40 V; No. of Terminals: 3;
40 V
14000
MPSA12RLRA
MPSA12RLRA by Onsemi is a NPN Darlington BJT with hFE of 20000, VCE of 20V, and IC of 0.3A. It is used in applications requiring high DC current gain and operates up to 150 °C. Ideal for amplification tasks due to its high transition frequency of 100MHz.
20 V
235
Tin/Lead (Sn/Pb)
100 MHz
MPSA12RLRP
MPSA12RLRP by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and Vce of 20V. Ideal for applications requiring high DC current gain like amplifiers or switching circuits due to its SILICON transistor element material and THROUGH-HOLE terminal form.
2N6426G
2N6426G by Onsemi is a NPN Darlington BJT with max. power dissipation of 1.5W, hFE of 20000, and VCE of 40V. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations.
e1
1.5 W
TIN SILVER COPPER
2N6427RLRAG
2N6427RLRAG by Onsemi is a NPN BJT with 40V VCEO, 0.5A IC, and 14000 hFE. Ideal for applications requiring high DC current gain like amplifiers and drivers due to its Darlington configuration. Package style is cylindrical with through-hole terminals for easy mounting.
MPSA13RLRPG
MPSA13RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 30V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and low collector-emitter voltage. Its cylindrical package makes it suitable for through-hole mounting in various electronic circuits.
MPSA14RLRAG
MPSA14RLRAG by Onsemi is a NPN Darlington BJT with hFE of 20000, VCEO of 30V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and frequency response in a cylindrical package with through-hole terminals.
Tin/Silver/Copper (Sn/Ag/Cu)
40
MPSA27G
MPSA27G by Onsemi is a NPN Darlington BJT transistor with hFE of 10000, Vce of 60V, and fT of 125MHz. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.
TO-226AA
BC373RL1G
BC373RL1G by Onsemi is a NPN Darlington transistor with max. power dissipation of 0.625W, hFE of 8000, and max. collector-emitter voltage of 80V. Ideal for amplifier applications due to its high gain and can operate up to 150 °C, making it suitable for various electronic designs requiring high performance in a small package.
EUROPEAN PART NUMBER
1 A
8000
MPSA28RLRPG
MPSA28RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 80V, and IC of 0.5A. Ideal for applications requiring high current gain and voltage amplification in through-hole configurations. Suitable for use in electronic circuits where precise switching and amplification are needed.
MPSA29RLRPG
MPSA29RLRPG by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150 °C with a transition frequency of 200MHz in a cylindrical package.
100 V
MPSA63RLRAG
MPSA63RLRAG by Onsemi is a PNP Darlington BJT with 1.5W power dissipation, hFE of 10000, and max temp of 150 °C. Ideal for switching applications due to its 30V VCE, 0.5A IC, and high transition frequency of 125MHz in a cylindrical package.
MPSA63G
MPSA63G by Onsemi is a PNP BJT transistor with a Darlington configuration. It has a max power dissipation of 1.5W, hFE of 10000, and operates up to 150°C. Ideal for switching applications due to its high collector current of 0.5A and max voltage of 30V.
MPSA64G
The Onsemi MPSA64G is a PNP Darlington transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 1.5W and max collector-emitter voltage of 30V, it operates at up to 150 °C. Featuring a min DC current gain of 20k and nominal transition frequency of 125MHz, it is suitable for high-performance electronic circuits.
MPSA64RLRAG
MPSA64RLRAG by Onsemi is a PNP BJT with 30V VCEO, 0.5A IC, and 1.5W power dissipation. Ideal for switching applications, it features a high DC current gain of 20k hFE and operates up to 150 °C. Its Darlington configuration makes it suitable for various electronic designs requiring reliable performance in through-hole packages.
MPSA64RLRMG
MPSA64RLRMG by Onsemi is a PNP Darlington BJT with 3 terminals, hFE of 20000, and max. power dissipation of 1.5W. Ideal for switching applications, it operates at up to 150 °C with VCE of 30V. The transistor's SILICON material and cylindrical package make it suitable for high-frequency operations up to 125MHz.
MPSA13RLRAG
MPSA13RLRAG by Onsemi is a NPN Darlington transistor with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 10k and can handle up to 1.5W power dissipation. With a max operating temperature of 150°C and collector-emitter voltage of 30V, it is suitable for various electronic circuits requiring high gain and power handling capabilities.
MPSA13RLRMG
MPSA13RLRMG by Onsemi is a NPN Darlington transistor with a max power dissipation of 1.5W and a min DC current gain of 10,000. It is commonly used as an amplifier in various applications.
MPSA13ZL1G
MPSA13ZL1G by Onsemi is a NPN Darlington transistor with a max power dissipation of 1.5W and a min DC current gain of 10000. It is commonly used as an amplifier in various applications.
MPSA14RLRPG
MPSA14RLRPG by Onsemi is a NPN Darlington BJT with 3 terminals, ideal for amplifier applications. It offers a high DC current gain of 20k and can handle up to 1.5W power dissipation. With a max operating temp of 150 °C and Vce of 30V, it's suitable for various electronic designs requiring high performance in a cylindrical package.
2N6426RLRAG
2N6426RLRAG by Onsemi is a NPN Darlington transistor with max. collector-emitter voltage of 40V and max. collector current of 0.5A. It has a min. DC current gain of 20,000 and nominal transition frequency of 125MHz, making it ideal for amplifier applications due to its high power dissipation capability of 0.625W.
2N6427G
NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
130 MHz
BC372G
BC372G by Onsemi is a NPN Darlington transistor with 3 terminals and a max power dissipation of 0.625W. With a min DC current gain of 8000, it operates at temperatures up to 150 °C. Ideal for applications requiring high collector current and transition frequency up to 200MHz in small signal circuits.
BC373G
BC373G by Onsemi is a NPN Darlington transistor with 8000 min DC current gain, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle up to 1A of collector current. With a nominal transition frequency of 200MHz, it operates b/w -55 °C to 150°C effectively in various electronic circuits.
-55 Cel
BC517RL1G
BC517RL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE max of 30V and IC max of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.
BC517ZL1G
BC517ZL1G by Onsemi is a NPN Darlington transistor with hFE of 30,000. It operates up to 150°C with VCE of 30V and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities in a cylindrical package.
BC618G
BC618G by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 55V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.
55 V
MPS6724G
MPS6724G by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers in electronic circuits.
1 W
MPS6724RLRAG
MPS6724RLRAG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 40V max collector-emitter voltage, and 100MHz transition frequency. Ideal for applications requiring high DC current gain like amplifiers or drivers due to its 4000 min hFE. Package style is cylindrical with through-hole terminals.
© 2023 All rights reserved
