Loading...

MPSA64G

Onsemi

MPSA64G by Onsemi

The Onsemi MPSA64G is a PNP Darlington transistor with 3 terminals, ideal for switching applications. With a max power dissipation of 1.5W and max collector-emitter voltage of 30V, it operates at up to 150 °C. Featuring a min DC current gain of 20k and nominal transition frequency of 125MHz, it is suitable for high-performance electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 43,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

43,000

-

-

-

-

Vyrian

USA . 9,745 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

9,745

-

-

-

-

Digiode

USA . 1,736 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,736

-

-

-

-

LWI Electronics Inc

India . 85 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

85

-

-

-

-

Prism Electronics

USA . 10 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 872 parts In-Stock

1+ parts

$18.800

100+ parts

-

1k+ parts

-

10k+ parts

-

872

$18.800

-

-

-

TANS Electronics

Latvia . 7,352 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,352

-

-

-

-

Problanco Electronics

Mexico . 6,837 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,837

-

-

-

-

Kulean Microsystems

USA . 4,221 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,221

-

-

-

-

SupplyDigital Components

Austria . 2,659 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,659

-

-

-

-

UHIMA Technologies

Türkiye . 766 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

766

-

-

-

-

Corohmni

South Africa . 440 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

440

-

-

-

-

Corphita

USA . 61 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

61

-

-

-

-

Overview

Unlock the power of efficient switching with the Onsemi MPSA64G Small Signal Bipolar Junction Transistor. Manufactured by industry leader Onsemi, this PNP Darlington transistor offers high quality and reliability for a variety of applications. Whether you're looking to optimize your electronics design or enhance performance, this transistor provides exceptional value with its high DC current gain and low power dissipation. Trust Onsemi for top-tier components that deliver outstanding results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it reliable for long-term use.

Polarity or Channel Type: PNP

Suitable for applications where PNP transistors are needed, offering flexibility in circuit design.

Configuration: DARLINGTON

Allows for high current gain and is ideal for applications requiring a high level of amplification.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring efficient performance in such operations.

Package Shape: ROUND

Compact and space-saving design, suitable for applications where size is a constraint.

Maximum Power Dissipation (Abs): 1.5 W

Capable of handling power dissipation up to 1.5W, making it suitable for medium-power applications.

Minimum DC Current Gain (hFE): 20000

High DC current gain ensures excellent amplification capabilities, suitable for low-power signal amplification.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 30 V

Can withstand collector-emitter voltages up to 30V, suitable for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers good performance and reliability, making it a popular choice for transistors.

Maximum Collector Current (IC): 0.5 A

Capable of handling collector currents up to 0.5A, suitable for low to medium current applications.

Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu)

Provides good conductivity and ensures reliable connections with other components.

Peak Reflow Temperature °C: 260

Capable of withstanding high reflow temperatures, suitable for soldering processes.

Nominal Transition Frequency (fT): 125 MHz

Offers high frequency response, making it suitable for high-speed switching and amplification applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSA64G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Silver/Copper (Sn/Ag/Cu)

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSA64G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20