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DARLINGTON Small Signal Bipolar Junction Transistors (BJT) 72

Small Signal Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
MPS6725G by Onsemi

MPS6725G

Onsemi

MPS6725G by Onsemi is a NPN Darlington BJT with 1W power dissipation, 4000 min. hFE, and 50V max. VCE. Ideal for applications requiring high current gain and low power consumption in through-hole configurations.

1 A

50 V

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

MPS6725RLRPG by Onsemi

MPS6725RLRPG

Onsemi

MPS6725RLRPG by Onsemi is a NPN Darlington BJT with 1W power dissipation, 4000 min. hFE, and 50V max. VCE. Ideal for applications requiring high current gain and low power consumption in through-hole configurations.

1 A

50 V

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

MPSA27RLRAG by Onsemi

MPSA27RLRAG

Onsemi

MPSA27RLRAG by Onsemi is a NPN Darlington transistor with hFE of 10000, VCEO of 60V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150 °C and has an fT of 125MHz. The package is cylindrical with through-hole terminals made of tin silver copper.

.5 A

60 V

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

125 MHz

MPSA28G by Onsemi

MPSA28G

Onsemi

MPSA28G by Onsemi is a NPN Darlington BJT with hFE of 10000, IC of 0.5A, and fT of 200MHz. Ideal for applications requiring high current gain and frequency response in through-hole configurations.

.5 A

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

200 MHz

MPSA29G by Onsemi

MPSA29G

Onsemi

MPSA29G by Onsemi is a NPN Darlington BJT with hFE of 10000, VCEO of 100V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

.5 A

100 V

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

200 MHz

MPSA75RLRAG by Onsemi

MPSA75RLRAG

Onsemi

MPSA75RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 40V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and temperature range up to 150 °C. Packaged in cylindrical shape with through-hole terminals for easy installation.

.5 A

40 V

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

125 MHz

MPSA77RLRAG by Onsemi

MPSA77RLRAG

Onsemi

MPSA77RLRAG by Onsemi is a PNP Darlington BJT transistor with hFE of 10000, VCEO of 60V, and IC of 0.5A. Ideal for amplifier applications due to its high gain and operating temperature up to 150 °C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

.5 A

60 V

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

125 MHz

MPSW13RLRAG by Onsemi

MPSW13RLRAG

Onsemi

MPSW13RLRAG by Onsemi is a NPN Darlington BJT with 1A IC, 125MHz fT, and 10000 hFE. Ideal for applications requiring high current gain and frequency response in through-hole configurations. Suitable for amplification circuits in electronic devices due to its high power dissipation of 1W and operating temperature up to 150 °C.

1 A

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

125 MHz

MPSW45AG by Onsemi

MPSW45AG

Onsemi

MPSW45AG by Onsemi is a NPN Darlington BJT with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and temperature resistance up to 150°C. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

1 A

50 V

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

MPSW45ARLRAG by Onsemi

MPSW45ARLRAG

Onsemi

MPSW45ARLRAG by Onsemi is a NPN Darlington transistor with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

1 A

50 V

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

MPSW45AZL1G by Onsemi

MPSW45AZL1G

Onsemi

MPSW45AZL1G by Onsemi is a NPN Darlington BJT with hFE of 4000, VCE of 50V, and IC of 1A. Ideal for amplifier applications due to its high gain and current capabilities. Its cylindrical package with through-hole terminals makes it suitable for various electronic designs.

EUROPEAN PART NUMBER

1 A

50 V

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

AMPLIFIER

SILICON

100 MHz

MPSW45RLREG by Onsemi

MPSW45RLREG

Onsemi

MPSW45RLREG by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and max IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.

1 A

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

MPSW63G by Onsemi

MPSW63G

Onsemi

MPSW63G by Onsemi is a PNP BJT with 1W power dissipation, hFE of 10000, and IC of 0.5A. Ideal for applications requiring high DC current gain like amplifiers or signal processing circuits due to its Darlington configuration and SILICON material.

.5 A

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

125 MHz

MPSW63RLRAG by Onsemi

MPSW63RLRAG

Onsemi

MPSW63RLRAG by Onsemi is a PNP Darlington BJT with 3 terminals. It features a max power dissipation of 1W, hFE of 10000, and fT of 125MHz. Ideal for applications requiring high current gain and frequency amplification in electronic circuits.

.5 A

DARLINGTON

10000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

PNP

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

125 MHz

MPSW45G by Onsemi

MPSW45G

Onsemi

MPSW45G by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.

1 A

DARLINGTON

4000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

1 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

100 MHz

MPSA12G by Onsemi

MPSA12G

Onsemi

MPSA12G by Onsemi is a NPN Darlington BJT with max. power dissipation of 0.625W, hFE of 20000, and Vce of 20V. Ideal for applications requiring high DC current gain like amplifiers or drivers due to its configuration and terminal form.

20 V

DARLINGTON

20000

TO-92

O-PBCY-T3

e1

1

3

150 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

NPN

.625 W

Not Qualified

Other Transistors

NO

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

SILICON

BCP49H6327XTSA1 by Infineon Technologies

BCP49H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; No. of Elements: 1;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PDSO-G4

e3

1

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

TIN

GULL WING

DUAL

AMPLIFIER

SILICON

200 MHz

PZTA14/ZLF by Nexperia

PZTA14/ZLF

Nexperia

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

COLLECTOR

.5 A

DARLINGTON

20000

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

PZTA14/ZLX by Nexperia

PZTA14/ZLX

Nexperia

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 125 MHz; Maximum Collector Current (IC): .5 A; No. of Terminals: 4;

COLLECTOR

.5 A

DARLINGTON

20000

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

YES

GULL WING

DUAL

AMPLIFIER

SILICON

125 MHz

BCV49H6327XTSA1 by Infineon Technologies

BCV49H6327XTSA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .5 A; Reference Standard: AEC-Q101;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PSSO-F3

e3

1

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

AEC-Q101

YES

TIN

FLAT

SINGLE

AMPLIFIER

SILICON

150 MHz

BCV48H6327XTSA1 by Infineon Technologies

BCV48H6327XTSA1

Infineon Technologies

Infineon BCV48H6327XTSA1 is a PNP Darlington BJT transistor with hFE of 2000, VCE of 60V, and fT of 200MHz. Ideal for amplifier applications, it features a small outline package, surface mount capability, and AEC-Q101 compliance.

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PSSO-F3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

PNP

AEC-Q101

YES

TIN

FLAT

SINGLE

AMPLIFIER

SILICON

200 MHz

FMMT614QTC by Diodes Incorporated

FMMT614QTC

Diodes Incorporated

NPN; Configuration: DARLINGTON; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Terminal Finish: MATTE TIN; Terminal Form: GULL WING;

HIGH RELIABILITY

.5 A

100 V

DARLINGTON

5000

R-PDSO-G3

e3

1

1

3

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

NPN

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SILICON

BCP49H6359XTMA1 by Infineon Technologies

BCP49H6359XTMA1

Infineon Technologies

NPN; Configuration: DARLINGTON; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

COLLECTOR

.5 A

60 V

DARLINGTON

2000

R-PDSO-G4

1

4

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

GULL WING

DUAL

NOT SPECIFIED

AMPLIFIER

SILICON

200 MHz

MMBT6427LT3G by Onsemi

MMBT6427LT3G

Onsemi

MMBT6427LT3G by Onsemi is a NPN Darlington transistor with max VCEsat of 1.5V, hFE of 14000, and IC of 0.5A. Ideal for small signal applications in electronics due to its high gain and low saturation voltage. Operates b/w -55 to 150 °C, making it suitable for various temperature environments.

.5 A

7 pF

40 V

DARLINGTON

14000

TO-236

R-PDSO-G3

1

3

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NPN

.3 W

YES

GULL WING

DUAL

SILICON

1.5 V