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MPSW45G

Onsemi

MPSW45G by Onsemi

MPSW45G by Onsemi is a NPN Darlington BJT with 1W power dissipation, hFE of 4000, and IC of 1A. Ideal for applications requiring high current amplification in through-hole configurations at up to 150 °C operating temperature.

Median Price

$0.671

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 200 parts In-Stock

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$0.671

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North Shore Components

USA . 7,483 parts In-Stock

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Vyrian

USA . 5,792 parts In-Stock

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Digiode

USA . 2,354 parts In-Stock

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LWI Electronics Inc

India . 180 parts In-Stock

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Distributors (Availability)

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AZTECH Wire

Italy . 245 parts In-Stock

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$16.480

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QUARKTWIN TECHNOLOGY LTD

USA . 21,208 parts In-Stock

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Perfect Parts

USA . 10,772 parts In-Stock

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Problanco Electronics

Mexico . 7,596 parts In-Stock

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SupplyDigital Components

Austria . 7,453 parts In-Stock

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Kulean Microsystems

USA . 6,741 parts In-Stock

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TANS Electronics

Latvia . 2,806 parts In-Stock

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Corphita

USA . 884 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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UHIMA Technologies

Türkiye . 89 parts In-Stock

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Overview

Discover the superior performance of the MPSW45G by Onsemi, a top-of-the-line Small Signal Bipolar Junction Transistor (BJT) that promises impeccable quality and reliability. Manufactured by Onsemi, a renowned industry leader known for cutting-edge technology and innovation, this NPN Darlington transistor offers unmatched benefits and advantages. With a high DC current gain, robust construction, and exceptional power dissipation capabilities, the MPSW45G is ideal for a wide range of applications. Experience the value of this product firsthand and elevate your projects to new heights with Onsemi's MPSW45G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material offers good insulation properties and durability, making the transistor suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are versatile for various electronic projects.

Configuration: DARLINGTON

Darlington configuration provides high current gain and is ideal for applications requiring a strong signal amplification.

Terminal Form: THROUGH-HOLE

Through-hole terminals ensure easy and secure connections during soldering, making the transistor convenient for circuit assembly.

Maximum Power Dissipation (Abs): 1 W

With a high power dissipation capability, this transistor can handle moderate power levels without overheating, ensuring reliability in operation.

Maximum Operating Temperature: 150 °C

The transistor can operate efficiently at high temperatures, making it suitable for applications where heat dissipation is a concern.

Minimum DC Current Gain (hFE): 4000

The high DC current gain indicates strong signal amplification capabilities, providing accurate and stable amplification in electronic circuits.

Maximum Collector Current (IC): 1 A

The high collector current rating allows the transistor to handle significant current loads, making it suitable for power applications.

Nominal Transition Frequency (fT): 100 MHz

The high transition frequency enables the transistor to switch rapidly between on and off states, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW45G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Configuration:

Minimum DC Current Gain (hFE):

4000

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW45G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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