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MPSW01ARLRA

Onsemi

MPSW01ARLRA by Onsemi

MPSW01ARLRA by Onsemi is a NPN BJT with 40V VCEO, 1A IC, and 50MHz fT. Ideal for low-power applications, it comes in a cylindrical package with through-hole terminals. With a max operating temp of 150 °C, it suits various electronic designs requiring small signal amplification.

Median Price

$0.563

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 2,000 parts In-Stock

1+ parts

$0.563

100+ parts

$0.208

1k+ parts

$0.146

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2,000

$0.563

$0.208

$0.146

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Chip Stock

USA . 17,000 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,000 parts In-Stock

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Dan-Mar Components

USA . 2,000 parts In-Stock

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Vyrian

USA . 1,188 parts In-Stock

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1,188

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Digiode

USA . 1,173 parts In-Stock

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PC Components Company LLC

USA . 370 parts In-Stock

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370

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 628 parts In-Stock

1+ parts

$99.990

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628

$99.990

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Infinite Electronics LLP (Excess)

. 64,002 parts In-Stock

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64,002

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A-Z Elektronik GmbH

Germany . 5,642 parts In-Stock

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Problanco Electronics

Mexico . 5,536 parts In-Stock

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TANS Electronics

Latvia . 4,350 parts In-Stock

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Kulean Microsystems

USA . 3,162 parts In-Stock

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Corphita

USA . 915 parts In-Stock

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UHIMA Technologies

Türkiye . 785 parts In-Stock

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SupplyDigital Components

Austria . 705 parts In-Stock

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Corohmni

South Africa . 375 parts In-Stock

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Overview

Enhance the performance of your electronic projects with the MPSW01ARLRA by Onsemi, a high-quality Small Signal Bipolar Junction Transistor. With Onsemi's reputation for excellence in manufacturing, this NPN transistor offers reliability and durability for a wide range of applications. From amplifiers to switching circuits, this transistor provides smooth operation and efficient power dissipation with a maximum collector current of 1A. Upgrade your designs with the value and benefits of Onsemi's MPSW01ARLRA today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: NPN

Commonly used transistor type with versatile applications in amplification and switching circuits.

Configuration: SINGLE

Simplified design with single configuration for ease of use and integration into circuits.

Package Shape: ROUND

Compact round shape saves space and allows for efficient mounting on PCBs.

Terminal Form: THROUGH-HOLE

Easy to solder and secure in place, suitable for hobbyist and professional electronics projects.

Maximum Power Dissipation (Abs): 0.625 W

Capable of handling moderate power levels, making it suitable for low to medium power applications.

Package Style (Meter): CYLINDRICAL

Sleek cylindrical design for easy handling and installation in electronic circuits.

Minimum DC Current Gain (hFE): 50

Consistent current gain ensures reliable and stable performance in amplification circuits.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for industrial applications.

Maximum Collector-Emitter Voltage: 40 V

Safely handles up to 40V, providing versatility for a wide range of applications.

Transistor Element Material: SILICON

Silicon material offers high efficiency and reliability, making the transistor a durable choice.

Maximum Collector Current (IC): 1 A

Capable of handling up to 1A of current, suitable for medium current applications.

Terminal Finish: TIN LEAD

Tin lead finish ensures good solderability and reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position allows for easy installation and connection in circuits.

Peak Reflow Temperature °C: 235

Withstands high reflow temperatures during soldering process, ensuring reliable connections.

Nominal Transition Frequency (fT): 50 MHz

High transition frequency allows for fast switching and amplification, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01ARLRA attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01ARLRA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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