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MPSW01RLRM

Onsemi

MPSW01RLRM by Onsemi

MPSW01RLRM by Onsemi is a NPN BJT with hFE of 50, VCEO of 30V, and IC of 1A. Ideal for low-power applications requiring high current gain. Its cylindrical package makes it suitable for through-hole mounting in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,051 parts In-Stock

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Digiode

USA . 607 parts In-Stock

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607

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TANS Electronics

Latvia . 7,452 parts In-Stock

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Problanco Electronics

Mexico . 5,369 parts In-Stock

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SupplyDigital Components

Austria . 4,802 parts In-Stock

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Kulean Microsystems

USA . 2,833 parts In-Stock

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Corphita

USA . 1,103 parts In-Stock

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Corohmni

South Africa . 408 parts In-Stock

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UHIMA Technologies

Türkiye . 291 parts In-Stock

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Overview

Enhance your electronic projects with the MPSW01RLRM by Onsemi, a top-quality NPN Small Signal Bipolar Junction Transistor. Manufactured by Onsemi, known for their reliability and innovation, this transistor offers superior performance and durability. Ideal for a wide range of applications, this product provides value and efficiency to customers looking for high-quality components. Upgrade your designs with the MPSW01RLRM and experience the benefits of using a trusted brand in the industry.

Feature Benefit Bullets

Package Body Material : PLASTIC/EPOXY

This material is lightweight and durable, making the transistor suitable for a wide range of applications.

Polarity or Channel Type : NPN

NPN transistors are commonly used in amplification circuits, making this transistor versatile for various electronic projects.

Configuration : SINGLE

The single configuration simplifies circuit design and makes it easier to integrate the transistor into existing setups.

Package Shape : ROUND

The round shape allows for easy mounting and soldering, making installation hassle-free.

Terminal Form : THROUGH-HOLE

Through-hole terminals provide a secure connection, ensuring reliable performance in different environments.

No. of Terminals : 3

With three terminals, this transistor can be easily integrated into various circuit designs for enhanced functionality.

Package Style (Meter) : CYLINDRICAL

The cylindrical package style is compact and space-saving, making it ideal for applications with limited space.

Minimum DC Current Gain (hFE) : 50

With a minimum DC current gain of 50, this transistor offers consistent and reliable amplification performance.

Maximum Operating Temperature : 150 °C

The high maximum operating temperature ensures the transistor can withstand demanding conditions without compromising performance.

Maximum Collector-Emitter Voltage : 30 V

The high maximum collector-emitter voltage provides flexibility in circuit design and allows for a wide range of operating voltages.

Transistor Element Material : SILICON

Silicon transistors are known for their high performance and reliability, making this product a durable choice for electronic projects.

Maximum Collector Current (IC) : 1 A

With a maximum collector current of 1 A, this transistor can handle moderate power loads, making it suitable for a variety of applications.

Terminal Finish : TIN LEAD

The tin lead terminal finish provides a secure connection and ensures long-term stability in different operating conditions.

Terminal Position : BOTTOM

The bottom terminal position makes it easy to mount the transistor on a circuit board, simplifying the installation process.

Nominal Transition Frequency (fT) : 50 MHz

With a nominal transition frequency of 50 MHz, this transistor offers fast switching speeds and high frequency response for optimal performance.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) MPSW01RLRM attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

MPSW01RLRM Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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